Search Results - "Kamioka, Takefumi"

Light Induced Recombination Center at SiO2/Si Interface by the Reactive Plasma Deposition by Hara, Tomohiko, Tanaka, Taichi, Nakagawa, Kazuhito, Isogai, Yuki, Kamioka, Takefumi, Ohshita, Yoshio

“…Effect of lights with various wavelength on the defect generation in reactive plasma deposition (RPD) process is studied using capacitance–voltage analysis…”
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Evaluation of correlation between fill factor and high mobility transparent conductive oxide film deposition temperature in the silicon heterojunction solar cells by Nishihara, Tappei, Kanai, Hiroki, Ohshita, Yoshio, Nakamura, Kyotaro, Kamioka, Takefumi, Hara, Tomohiko, Yamaguchi, Seira, Koharada, Masato, Ogura, Atsushi

“…We investigated the degradation factor of the conversion efficiency of the silicon heterojunction solar cells. In particular, we clarified the effect of the…”
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Feature extraction and spatial imaging of synchrotron radiation X-ray diffraction patterns using unsupervised machine learning by Kutsukake, Kentaro, Kamioka, Takefumi, Matsui, Kota, Takeuchi, Ichiro, Segi, Takashi, Sasaki, Takuo, Fujikawa, Seiji, Takahasi, Masamitu

“…ABSTRACTWe analyzed a number of complicated X-ray diffraction patterns using feature patterns obtained through unsupervised machine learning. A crystalline…”
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Electrical properties of GaAs//indium tin oxide/Si junctions for III-V-on-Si hybrid multijunction cells by Hara, Tomoya, Ogawa, Tomoki, Liang, Jianbo, Araki, Kenji, Kamioka, Takefumi, Shigekawa, Naoteru

“…The electrical properties of GaAs//indium tin oxide (ITO)/Si junctions fabricated by surface-activated bonding (SAB) are investigated with emphasis on their…”
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Effects of damages induced by indium-tin-oxide reactive plasma deposition on minority carrier lifetime in silicon crystal by Kamioka, Takefumi, Isogai, Yuki, Hayashi, Yutaka, Ohshita, Yoshio, Ogura, Atsushi

“…A reactive-plasma deposition (RPD) process damage is evaluated for an indium-tin-oxide (ITO)/SiO2/Si structure in terms of the recombination properties at the…”
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Electrical conduction of Si/indium tin oxide/Si junctions fabricated by surface activated bonding by Liang, Jianbo, Ogawa, Tomoki, Hara, Tomoya, Araki, Kenji, Kamioka, Takefumi, Shigekawa, Naoteru

“…The electrical properties of n+-Si//indium tin oxide (ITO)/n+-Si, n+-Si//ITO/p+-Si, and p+-Si//ITO/n+-Si junctions fabricated by surface activated bonding…”
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Simulation study on lateral minority carrier transport in the surface inversion layer of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell by Kamioka, Takefumi, Hayashi, Yutaka, Gotoh, Kazuhiro, Hara, Tomohiko, Ozaki, Ryo, Morimura, Motoo, Shimizu, Ayako, Nakamura, Kyotaro, Usami, Noritaka, Ogura, Atsushi, Ohshita, Yoshio

“…The theoretical lateral current of the surface inversion layer in a crystalline silicon (cSi) surface for a p-aSi:H/i-aSi:H/cSi heterojunction (SHJ) solar cell…”
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Full-scale whole device EMC/MD simulation of Si nanowire transistor including source and drain regions by utilizing graphic processing units by Suzuki, Akito, Watanabe, Takanobu, Kamakura, Yoshinari, Kamioka, Takefumi

“…We have realized the full-scale whole device EMC/MD simulation including source and drain regions by utilizing graphic processing unit. The transfer…”
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Fabrication and performance analysis of a mechanical stack InGaP/GaAs//Si solar cell by Kan-Hua Lee, Nakamura, Kyotaro, Kamioka, Takefumi, Kojima, Nobuaki, Hyunju Lee, Li Wang, Araki, Kenji, Ohshita, Yoshio, Ogura, Atsushi, Yamaguchi, Masafumi

“…We present the measurement results and analyses of a InGaP/GaAs//Si mechanical stack four-terminal solar cell. From these results, we performed detailed…”
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Real-Time Scanning Tunneling Microscopy Observation of Si(111) Surface Modified by Au+ Ion Irradiation by Kamioka, Takefumi, Sato, Kou, Kazama, Yutaka, Ohdomari, Iwao, Watanabe, Takanobu

“…The real-time scanning tunneling microscopy (STM) observation of Au + ion irradiation effects on a high-temperature Si surface has been performed using our…”
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Si Island Formation on Domain Boundaries Induced by Ar Ion Irradiation on High-Temperature Si(111)-7 ×7 Dimer-Adatom-Stacking Fault Surfaces by Uchigasaki, Makoto, Tomiki, Kenichi, Kamioka, Takefumi, Nakayama, Eiji, Watanabe, Takanobu, Ohdomari, Iwao

“…Using a low-energy ion gun/high-temperature scanning tunneling microscope combined system (IG/STM), we observed the atomic scale behavior of a Si surface kept…”
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Effects of annealing temperature on workfunction of MoOx at MoOx/SiO2 interface and process-induced damage in indium tin oxide/MoOx/SiOx/Si stack by Kamioka, Takefumi, Hayashi, Yutaka, Isogai, Yuki, Nakamura, Kyotaro, Ohshita, Yoshio

“…The workfunction of molybdenum oxide (MoOx) at the MoOx/SiO2 interface, which is referred to as the interface workfunction, and the process-induced damage at…”
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Electrical conduction of Si/ITO/Si junctions fabricated by surface activated bonding by Jianbo Liang, Ogawa, Tomoki, Araki, Kenji, Kamioka, Takefumi, Shigekawa, Naoteru

“…The electrical properties of n-Si/ITO/n-Si, n-Si/ITO/p-Si, and p-Si/ITO/n-Si junctions fabricated by surface activated bonding (SAB) were investigated. The…”
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Evaluation of plasma induced defects on silicon substrate by solar cell fabrication process by Onishi, Kohei, Hara, Yutaka, Nishihara, Tappei, Kanai, Hiroki, Kamioka, Takefumi, Ohshita, Yoshio, Ogura, Atsushi

“…This research investigates the cause of lifetime reduction properties of a crystalline defect layer introduced by the plasma process such as reactive plasma…”
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GaAs/Indium Tin Oxide/Si Bonding Junctions for III-V-on-Si Hybrid Multijunction Cells With Low Series Resistance by Shigekawa, Naoteru, Hara, Tomoya, Ogawa, Tomoki, Liang, Jianbo, Kamioka, Takefumi, Araki, Kenji, Yamaguchi, Masafumi

“…Effects of GaAs/indium tin oxide (ITO)/Si junctions on III-V-on-Si multijunction solar cells are examined by fabricating and characterizing InGaP/GaAs/ITO/Si…”
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Effects of annealing temperature on workfunction of MoO x at MoO x /SiO 2 interface and process-induced damage in indium tin oxide/MoO x /SiO x /Si stack by Kamioka, Takefumi, Hayashi, Yutaka, Isogai, Yuki, Nakamura, Kyotaro, Ohshita, Yoshio

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Effects of annealing temperature on workfunction of MoO ^sub x^ at MoO ^sub x^ /SiO^sub 2^ interface and process-induced damage in indium tin oxide/MoO ^sub x^ /SiO ^sub x^ /Si stack by Kamioka, Takefumi, Hayashi, Yutaka, Isogai, Yuki, Nakamura, Kyotaro, Ohshita, Yoshio

“…The workfunction of molybdenum oxide (MoO x ) at the MoO x /SiO2 interface, which is referred to as the interface workfunction, and the process-induced damage…”
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Surface inversion layer effective minority carrier mobility as one of the measures of surface quality of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell by Kamioka, Takefumi, Hayashi, Yutaka, Gotoh, Kazuhiro, Ozaki, Ryo, Nakamura, Kyotaro, Morimura, Motoo, Naitou, Shimako, Usami, Noritaka, Ogura, Atsushi, Ohshita, Yoshio

“…The lateral transport of minority carriers in the surface inversion layer of a crystalline silicon (cSi) surface for a p-aSi:H/i-aSi:H/cSi heterojunction (SHJ)…”
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Simulation of interdigitated back-contact silicon heterojunction solar cells with quantum transport model by Kamioka, Takefumi, Hayashi, Yutaka, Nakamura, Kyotaro, Ohshita, Yoshio

“…A simulation of interdigitated back-contact silicon heterojunction (IBC-SHJ) solar cells was performed using a quantum transport model to consider the quantum…”
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Surface modification of silicon with single ion irradiation by Ohdomari, Iwao, Kamioka, Takefumi

“…In order to solve the issues in Si nanoelectronics such as fluctuation in the device functions and poor reliability of devices due to relative increase in mass…”
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