Search Results - "Kaminskii, A.S."
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Orientation kinetics of the hexavacancies—V 6 (B 804) in silicon
Published in Solid state communications (2004)“…A phenomenological kinetic equation is proposed to describe a process of a hexavacancy (V 6) orientation in silicon samples. The orientation kinetics of V 6…”
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Orientation kinetics of the hexavacancies—V6 (B804) in silicon
Published in Solid state communications (01-06-2004)Get full text
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Uniaxial-stress-induced alignment of the B804 (J-lines) centres in silicon
Published in Solid state communications (01-06-1998)“…The influence of uniaxial stress on the formation process of the trigonal B 80 4 centres in silicon was investigated with excitonic spectroscopy. Alignment…”
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Thermal and neutron-physical features of the nuclear reactor for a power pulsation plant for space applications
Published in Journal of engineering physics and thermophysics (01-05-2012)“…We have explored the possibility of creating small-size reactors with a high power output with the provision of thermal stability and nuclear safety under…”
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Photoluminescence of excitons bound to the radiation damage deffects B 41 (1.1509 eV) in silicon
Published in Solid state communications (1996)“…Using photoluminescence spectroscopy in magnetic fields up to 12 T, we show that the very shallow isoelectronic centers B 41 (1.15090 eV principal no phonon…”
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Photoluminescence of excitons bound to the radiation damage deffects B41 (1.1509 eV) in silicon
Published in Solid state communications (01-01-1996)Get full text
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7
Splitting of the ground state of shallow acceptors in silicon
Published in Solid state communications (01-02-1995)“…The results of near infra-red piezo-photoluminescence, photoluminescence excitation, and absorption spectroscopy of silicon doped with Al, Ga, and In performed…”
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Photoluminescence of excitons bound to the isoelectronic hydrogen-related defects [ital B][sub 71][sup 1] (1. 1377 eV) in silicon
Published in Physical review. B, Condensed matter (15-09-1994)“…Photoluminescence (PL) spectra of excitons bound to the isoelectronic defects [ital B][sub 71][sup 1] (1.137 68 eV principal no-phonon line) created in…”
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Test stand for research on the physics of high-temperature gas-cooled reactors
Published in Soviet Atomic Energy (01-12-1984)Get full text
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