Search Results - "Kaminska, Eliana"

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  1. 1

    Ohmic Contact to n-GaN Using RT-Sputtered GaN:O by Maslyk, Monika, Prystawko, Pawel, Kaminska, Eliana, Grzanka, Ewa, Krysko, Marcin

    Published in Materials (01-08-2023)
    “…One of the key issues in GaN-based devices is the resistivity and technology of ohmic contacts to n-type GaN. This work presents, for the first time, effective…”
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  2. 2

    Surface Properties of Nanostructured, Porous ZnO Thin Films Prepared by Direct Current Reactive Magnetron Sputtering by Kwoka, Monika, Lyson-Sypien, Barbara, Kulis, Anna, Maslyk, Monika, Borysiewicz, Michal Adam, Kaminska, Eliana, Szuber, Jacek

    Published in Materials (14-01-2018)
    “…In this paper, the results of detailed X-ray photoelectron spectroscopy (XPS) studies combined with atomic force microscopy (AFM) investigation concerning the…”
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  3. 3

    Enhancement of Ru-Si-O/In-Ga-Zn-O MESFET Performance by Reducing Depletion Region Trap Density by Kaczmarski, Jakub, Grochowski, Jakub, Kaminska, Eliana, Taube, Andrzej, Borysiewicz, Michal A., Pagowska, Karolina, Jung, Wojciech, Piotrowska, Anna

    Published in IEEE electron device letters (01-05-2015)
    “…In this letter, we investigated the effect of magnetron cathode current (I c ) during reactive sputtering of In-Ga-Zn-O (a-IGZO) channel layer on properties of…”
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  4. 4

    Transparent (Ni,Au)/ZnO:Al-Based Ohmic Contacts to p‑Type GaN as an Insight into the Role of Ni and Au in Standard p‑Type GaN Contacts by Wójcicka, Aleksandra, Fogarassy, Zsolt, Kravchuk, Tatyana, Saguy, Cecile, Kamińska, Eliana, Perlin, Piotr, Grzanka, Szymon, Borysiewicz, Michał Adam

    Published in ACS applied materials & interfaces (06-11-2024)
    “…In this work, Ni/ZnO:Al and Au/ZnO:Al structures are proposed as efficient ohmic contacts to p-GaN. Through a careful selection of deposition parameters and…”
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  5. 5

    Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes by Levchenko, Iryna, Kryvyi, Serhii, Kamińska, Eliana, Grzanka, Szymon, Grzanka, Ewa, Marona, Łucja, Perlin, Piotr

    Published in Materials (01-10-2023)
    “…In this paper, we investigate the effect of Pd thickness and heat treatment on Pd/Ni/Au/p-GaN metal contacts. The as-deposited samples exhibit a smooth…”
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  6. 6

    Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode by Levchenko, Iryna, Kryvyi, Serhii, Kamińska, Eliana, Smalc-Koziorowska, Julita, Grzanka, Szymon, Kacperski, Jacek, Nowak, Grzegorz, Kret, Sławomir, Marona, Łucja, Perlin, Piotr

    Published in Materials (14-09-2024)
    “…The impact of wet treatment using an (NH4)2S-alcohol solution on the interface state of the p-GaN/Ni/Au/Pt contact system and laser diode processing was…”
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  7. 7

    Oxidation of MBE-Grown ZnTe and ZnTe/Zn Nanowires and Their Structural Properties by Gas, Katarzyna, Kret, Slawomir, Zaleszczyk, Wojciech, Kamińska, Eliana, Sawicki, Maciej, Wojtowicz, Tomasz, Szuszkiewicz, Wojciech

    Published in Materials (13-09-2021)
    “…Results of comparative structural characterization of bare and Zn-covered ZnTe nanowires (NWs) before and after thermal oxidation at 300 °C are presented…”
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  8. 8

    InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications by Gibasiewicz, Krzysztof, Kafar, Anna, Schiavon, Dario, Saba, Kiran, Marona, Łucja, Kamińska, Eliana, Perlin, Piotr

    Published in Micromachines (Basel) (09-02-2023)
    “…The main objective of this work is to demonstrate and validate the feasibility of fabricating (Al, In) GaN laser diodes with etched facets. The facets are…”
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  9. 9

    Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies by Kozubal, Maciej A., Karolina, Pągowska, Andrzej, Taube, Renata, Kruszka, Iwona, Sankowska, Eliana, Kamińska

    “…The aspects of Si+ implantation for low resistivity ohmic contact formation to gallium nitride (GaN) with moderate annealing temperatures for dopant activation…”
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  10. 10

    AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts by Wojtasiak, Wojciech, Góralczyk, Marcin, Gryglewski, Daniel, Zając, Marcin, Kucharski, Robert, Prystawko, Paweł, Piotrowska, Anna, Ekielski, Marek, Kamińska, Eliana, Taube, Andrzej, Wzorek, Marek

    Published in Micromachines (Basel) (25-10-2018)
    “…AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the…”
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  11. 11

    Ohmic contact formation to GaN by Ge+ implantation doping: Implantation fluence and encapsulation layer studies by Kozubal Maciej, A., Karolina, Pągowska, Andrzej, Taube, Renata, Kruszka, Monika, Masłyk, Kamińska, Eliana

    “…This work investigates aspects of electrical doping of gallium nitride (GaN) by Ge+ ion implantation for low-resistivity ohmic contacts, with particular…”
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  12. 12
  13. 13

    Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts by Taube, Andrzej, Kaczmarski, Jakub, Kruszka, Renata, Grochowski, Jakub, Kosiel, Kamil, Gołaszewska-Malec, Krystyna, Sochacki, Mariusz, Jung, Wojciech, Kamińska, Eliana, Piotrowska, Anna

    Published in Solid-state electronics (01-09-2015)
    “…[Display omitted] •We fabricated HV AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain electrodes.•We examine impact of temperature on the electrical…”
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  14. 14

    Controlling In–Ga–Zn–O thin films transport properties through density changes by Kaczmarski, Jakub, Boll, Torben, Borysiewicz, Michał A., Taube, Andrzej, Thuvander, Mattias, Law, Jia Yan, Kamińska, Eliana, Stiller, Krystyna

    Published in Thin solid films (01-06-2016)
    “…In the following study we investigate the effect of the magnetron cathode current (Ic) during reactive sputtering of In–Ga–Zn–O (a-IGZO) on thin-films…”
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  15. 15

    From porous to dense thin ZnO films through reactive DC sputter deposition onto Si (100) substrates by Borysiewicz, Michał A., Dynowska, Elżbieta, Kolkovsky, Valery, Dyczewski, Jan, Wielgus, Maciej, Kamińska, Eliana, Piotrowska, Anna

    “…Thin polycrystalline ZnO films are deposited onto Si (100) substrates by means of DC reactive sputter deposition from a Zn target in an argon–oxygen mixture…”
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  16. 16

    Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs by Taube, Andrzej, Sochacki, Mariusz, Szmidt, Jan, Kaminska, Eliana, Piotrowska, Anna

    “…The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer,…”
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  17. 17

    Nanocoral ZnO films fabricated on flexible poly(vinyl chloride) using a carrier substrate by Borysiewicz, Michał A., Wojciechowski, Tomasz, Dynowska, Elżbieta, Wielgus, Maciej, Bar, Jan, Wojtowicz, Tomasz, Kamińska, Eliana, Piotrowska, Anna

    Published in Thin solid films (01-01-2014)
    “…Nanocoral ZnO films on flexible poly(vinyl chloride) (PVC) were fabricated using a three step approach including (1) sputter deposition of a porous Zn film…”
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  18. 18

    Thermal stability of multilayer Ti2AlN-based ohmic contacts to n-GaN in ambient air by Borysiewicz, Michał A., Myśliwiec, Marcin, Gołaszewska, Krystyna, Jakieła, Rafał, Dynowska, Elżbieta, Kamińska, Eliana, Piotrowska, Anna

    Published in Solid-state electronics (01-04-2014)
    “…[Display omitted] •Ti2AlN-based ohmic contacts to n-GaN (rc=8×10−4Ωcm2) aged in ambient air.•Ohmic characteristics retained after 100-h aging at 300°C, 400°C…”
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  19. 19

    ZnO - Wide Bandgap Semiconductor and Possibilities of Its Application in Optical Waveguide Structures by Struk, Przemysław, Pustelny, Tadeusz, Gołaszewska, Krystyna, A. Borysiewicz, Michał, Kamińska, Eliana, Wojciechowski, Tomasz, Piotrowska, Anna

    Published in Metrology and Measurement systems (21-08-2014)
    “…The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide…”
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  20. 20

    Transparent Ru-Si-O/In-Ga-Zn-O MESFETs on Flexible Polymer Substrates by Kaczmarski, Jakub, Taube, Andrzej, Borysiewicz, Michal A., Mysliwiec, Marcin, Piskorski, Krzysztof, Stiller, Krystyna, Kaminska, Eliana

    Published in IEEE transactions on electron devices (01-01-2018)
    “…With the development of novel device applications, e.g., in the field of Internet of Things or point-of-care personalized diagnostic systems, came an increased…”
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