Search Results - "Kaminska, Eliana"
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1
Ohmic Contact to n-GaN Using RT-Sputtered GaN:O
Published in Materials (01-08-2023)“…One of the key issues in GaN-based devices is the resistivity and technology of ohmic contacts to n-type GaN. This work presents, for the first time, effective…”
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2
Surface Properties of Nanostructured, Porous ZnO Thin Films Prepared by Direct Current Reactive Magnetron Sputtering
Published in Materials (14-01-2018)“…In this paper, the results of detailed X-ray photoelectron spectroscopy (XPS) studies combined with atomic force microscopy (AFM) investigation concerning the…”
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3
Enhancement of Ru-Si-O/In-Ga-Zn-O MESFET Performance by Reducing Depletion Region Trap Density
Published in IEEE electron device letters (01-05-2015)“…In this letter, we investigated the effect of magnetron cathode current (I c ) during reactive sputtering of In-Ga-Zn-O (a-IGZO) channel layer on properties of…”
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4
Transparent (Ni,Au)/ZnO:Al-Based Ohmic Contacts to p‑Type GaN as an Insight into the Role of Ni and Au in Standard p‑Type GaN Contacts
Published in ACS applied materials & interfaces (06-11-2024)“…In this work, Ni/ZnO:Al and Au/ZnO:Al structures are proposed as efficient ohmic contacts to p-GaN. Through a careful selection of deposition parameters and…”
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5
Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes
Published in Materials (01-10-2023)“…In this paper, we investigate the effect of Pd thickness and heat treatment on Pd/Ni/Au/p-GaN metal contacts. The as-deposited samples exhibit a smooth…”
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6
Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode
Published in Materials (14-09-2024)“…The impact of wet treatment using an (NH4)2S-alcohol solution on the interface state of the p-GaN/Ni/Au/Pt contact system and laser diode processing was…”
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7
Oxidation of MBE-Grown ZnTe and ZnTe/Zn Nanowires and Their Structural Properties
Published in Materials (13-09-2021)“…Results of comparative structural characterization of bare and Zn-covered ZnTe nanowires (NWs) before and after thermal oxidation at 300 °C are presented…”
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8
InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications
Published in Micromachines (Basel) (09-02-2023)“…The main objective of this work is to demonstrate and validate the feasibility of fabricating (Al, In) GaN laser diodes with etched facets. The facets are…”
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9
Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies
Published in Materials science in semiconductor processing (01-02-2021)“…The aspects of Si+ implantation for low resistivity ohmic contact formation to gallium nitride (GaN) with moderate annealing temperatures for dopant activation…”
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10
AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
Published in Micromachines (Basel) (25-10-2018)“…AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the…”
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11
Ohmic contact formation to GaN by Ge+ implantation doping: Implantation fluence and encapsulation layer studies
Published in Materials science in semiconductor processing (01-08-2022)“…This work investigates aspects of electrical doping of gallium nitride (GaN) by Ge+ ion implantation for low-resistivity ohmic contacts, with particular…”
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12
Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al
Published in Physica status solidi. A, Applications and materials science (01-05-2015)“…In this work, we report on the fabrication of electrical isolation for planar AlGaN/GaN high electron mobility transistors (HEMTs) using Al and C ion…”
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13
Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts
Published in Solid-state electronics (01-09-2015)“…[Display omitted] •We fabricated HV AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain electrodes.•We examine impact of temperature on the electrical…”
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14
Controlling In–Ga–Zn–O thin films transport properties through density changes
Published in Thin solid films (01-06-2016)“…In the following study we investigate the effect of the magnetron cathode current (Ic) during reactive sputtering of In–Ga–Zn–O (a-IGZO) on thin-films…”
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15
From porous to dense thin ZnO films through reactive DC sputter deposition onto Si (100) substrates
Published in Physica status solidi. A, Applications and materials science (01-12-2012)“…Thin polycrystalline ZnO films are deposited onto Si (100) substrates by means of DC reactive sputter deposition from a Zn target in an argon–oxygen mixture…”
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16
Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs
Published in International Journal of Electronics and Telecommunications (28-10-2014)“…The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer,…”
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17
Nanocoral ZnO films fabricated on flexible poly(vinyl chloride) using a carrier substrate
Published in Thin solid films (01-01-2014)“…Nanocoral ZnO films on flexible poly(vinyl chloride) (PVC) were fabricated using a three step approach including (1) sputter deposition of a porous Zn film…”
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18
Thermal stability of multilayer Ti2AlN-based ohmic contacts to n-GaN in ambient air
Published in Solid-state electronics (01-04-2014)“…[Display omitted] •Ti2AlN-based ohmic contacts to n-GaN (rc=8×10−4Ωcm2) aged in ambient air.•Ohmic characteristics retained after 100-h aging at 300°C, 400°C…”
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19
ZnO - Wide Bandgap Semiconductor and Possibilities of Its Application in Optical Waveguide Structures
Published in Metrology and Measurement systems (21-08-2014)“…The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide…”
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20
Transparent Ru-Si-O/In-Ga-Zn-O MESFETs on Flexible Polymer Substrates
Published in IEEE transactions on electron devices (01-01-2018)“…With the development of novel device applications, e.g., in the field of Internet of Things or point-of-care personalized diagnostic systems, came an increased…”
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