Analysing the Functioning Mechanisms and Potential Improvements Concerning Graphene-Assisted Electro-Optical Modulators

Analysing the Functioning Mechanisms and Potential Improvements Concerning Graphene-Assisted Electro-Optical Modulators

Silicon photonics-based optical modulators embedded with graphene have been demonstrated operating in bandwidths ranging from 2.7 to 30 GHz. Such devices sport compact footprints (μm 2 range, against todays mm 2 areas) and demand low energy per bit values (sub-pJ range) for high-speed applications i...

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Bibliographic Details
Published in:2018 SBFoton International Optics and Photonics Conference (SBFoton IOPC) pp. 1 - 5
Main Authors: Marques, Israel A., Kamiha, Guilherme H., Martinez, Giovanni, de Oliveira, Rafael E. P
Format: Conference Proceeding
Language:English
Published: IEEE 01-10-2018
Subjects:
bandwidth
capacitance
Graphene
modulator
Optical imaging
Optical modulation
Optical refraction
Optical variables control
resistance
review
Silicon
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Summary:Silicon photonics-based optical modulators embedded with graphene have been demonstrated operating in bandwidths ranging from 2.7 to 30 GHz. Such devices sport compact footprints (μm 2 range, against todays mm 2 areas) and demand low energy per bit values (sub-pJ range) for high-speed applications in the C-band of telecommunications (1550 nm). This paper contributes by examining the role that resistance and capacitance optimization play in increasing electro-optical bandwidth and reducing energy per bit consumption, as well as the limits concerning these improvements by approaching previously proposed architectures through updated resistance reduction techniques and a more realistic analysis regarding device's capacitance.
DOI:10.1109/SBFoton-IOPC.2018.8610921