Search Results - "Kamei, Takahiro"

Individual identification of goldfish from eye morphology: the eye mark method by Yoshida, Masayuki, Terabayashi, Itsumi, Kamei, Takahiro, Misawa, Akari, Yamamoto, Masaki, Umino, Tetsuya

“…We developed an individual identification method for goldfish based on morphological variation of the iris. Each goldfish has a few dark lines (eye marks) in…”
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Variability Analysis of Scaled Crystal Channel and Poly-Si Channel FinFETs by Yongxun Liu, Kamei, T., Matsukawa, T., Endo, K., O'uchi, S., Tsukada, J., Yamauchi, H., Ishikawa, Y., Hayashida, T., Sakamoto, K., Ogura, A., Masahara, M.

“…The threshold voltage Vt variability in the scaled crystal channel and poly-Si channel double-gate fin-type metal-oxide-semiconductor field-effect transistors…”
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Fin-Height Effect on Poly-Si/PVD-TiN Stacked-Gate FinFET Performance by Hayashida, T., Endo, K., Liu, Y., O'uchi, S., Matsukawa, T., Mizubayashi, W., Migita, S., Morita, Y., Ota, H., Hashiguchi, H., Kosemura, D., Kamei, T., Tsukada, J., Ishikawa, Y., Yamauchi, H., Ogura, A., Masahara, M.

“…We compared the electrical characteristics, including mobility and on -state current I on , of n + -poly-Si/PVD-TiN stacked-gate FinFETs with different fin…”
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Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistor Fabrication by Liu, Yongxun, Kamei, Takahiro, Endo, Kazuhiko, O'uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Hayashida, Tetsuro, Ishikawa, Yuki, Matsukawa, Takashi, Sakamoto, Kunihiro, Ogura, Atsushi, Masahara, Meishoku

“…The nanoscale wet etching of physical-vapor-deposited (PVD) titanium nitride (TiN) and its application to sub-30-nm-gate-length fin-type double-gate…”
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Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories by Liu, Yongxun, Kamei, Takahiro, Matsukawa, Takashi, Endo, Kazuhiko, O'uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Ishikawa, Yuki, Hayashida, Tetsuro, Sakamoto, Kunihiro, Ogura, Atsushi, Masahara, Meishoku

“…Polycrystalline silicon (poly-Si) fin-channel tri-gate (TG)- and double-gate (DG)-type flash memories with a thin n + -poly-Si floating gate (FG) and different…”
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Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium--Nitride Gate for High-Performance Fin-Type Metal--Oxide--Semiconductor Field-Effect Transistors by Hayashida, Tetsuro, Endo, Kazuhiko, Liu, Yongxun, O'uchi, Shin-ichi, Matsukawa, Takashi, Mizubayashi, Wataru, Migita, Shinji, Morita, Yukinori, Ota, Hiroyuki, Hashiguchi, Hiroki, Kosemura, Daisuke, Kamei, Takahiro, Tsukada, Junichi, Ishikawa, Yuki, Yamauchi, Hiromi, Ogura, Atsushi, Masahara, Meishoku

“…In this study, we successfully introduced an atomic-layer-deposited (ALD) titanium nitride (TiN) gate grown with a tetrakis(dimethylamino)titanium (TDMAT)…”
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Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium–Nitride Gate for High-Performance Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors by Hayashida, Tetsuro, Endo, Kazuhiko, Liu, Yongxun, O'uchi, Shin-ichi, Matsukawa, Takashi, Mizubayashi, Wataru, Migita, Shinji, Morita, Yukinori, Ota, Hiroyuki, Hashiguchi, Hiroki, Kosemura, Daisuke, Kamei, Takahiro, Tsukada, Junichi, Ishikawa, Yuki, Yamauchi, Hiromi, Ogura, Atsushi, Masahara, Meishoku

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Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal--Oxide--Semiconductor Field-Effect Transistor by Hayashida, Tetsuro, Endo, Kazuhiko, Liu, Yongxun, Kamei, Takahiro, Matsukawa, Takashi, O'uchi, Shin-ichi, Sakamoto, Kunihiro, Tsukada, Junichi, Ishikawa, Yuki, Yamauchi, Hiromi, Ogura, Atsushi, Masahara, Meishoku

“…In this paper, we describe the superiority of the titanium nitride (TiN) film formed by atomic layer deposition (ALD) using a tetrakis(dimethylamino)titanium…”
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74.1L: Late-News Paper: Oxide TFTs and Color Filter Array Technology for Flexible Top-emission White OLED Display by Noda, Makoto, Teramoto, Kazuma, Fukumoto, Eri, Fukuda, Toshihiro, Shimokawa, Keisuke, Saito, Takatoshi, Tanikawa, Toru, Suzuki, Masato, Izumi, Gaku, Kumon, Satoshi, Arai, Toshiaki, Kamei, Takahiro, Kodate, Manabu, No, Sonhi, Sasaoka, Tatsuya, Nomoto, Kazumasa

“…We have developed a direct fabrication method of oxide TFT on a flexible substrate and a flexible color filter array (CFA) technology for white OLED. The oxide…”
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69.2: New R2PAT Printing Method for Fabricating TFT Electrodes by Tanaka, Masanobu, Ishihara, Hirotsugu, Shimamura, Toshiki, Machida, Akio, Kamei, Takahiro, Ogawa, Masataka

“…We have developed a low contact pressure Residual ink Removed Pattern Transfer (R2PAT) printing method which allows fully additive, vacuum‐free TFT electrode…”
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Soft-Material-Based Highly Reliable Tri-Axis Tactile Thin-Film Sensors for Robotic Manipulation Tasks by Tsukamoto, Kei, Ebisui, Akira, Goto, Tetsuro, Sakakura, Yoshiaki, Kobayashi, Ken, Sato, Satoshi, Kamei, Takahiro, Imai, Yutaka, Nomoto, Kazumasa

“…Tactile sensing is essential for intelligent robot control such as for dexterous manipulation tasks. To provide reliable sensors that can withstand industrial…”
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Laser‐addressed full‐color photo‐quality rewritable sheets based on thermochromic systems with leuco dyes by Kaino, Yuriko, Kurihara, Kenichi, Shuto, Aya, Mizuno, Hiroshi, Asaoka, Satoko, Ishida, Takehisa, Takagi, Kenji, Takahashi, Isao, Amago, Hirohisa, Takeuchi, Taichi, Tejima, Asuka, Watanabe, Maho, Oishi, Yuki, Kamei, Takahiro, Nomoto, Kazumasa

“…We have developed a laser‐addressed full‐color photographic quality rewritable sheet. The sheet was composed of a vertically stacked…”
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P‐138: Rollable Multi‐Touch Organic Capacitive Pressure Sensor for Multi‐Directional User Interactions by Ebisui, Akira, Kaneko, Hiroki, Tsukamoto, Kei, Harada, Tomoko, Goto, Tetsuro, Sakakura, Yoshiaki, Miyawaki, Manami, Hasegawa, Hayato, Kobayashi, Ken, Sato, Satoshi, Kamei, Takahiro, Nomoto, Kazumasa

“…We have developed a rollable multi‐touch pressure sensor that works with a radius down to 5 mm, a high dynamic range of 1–300 kPa, and a spatial resolution…”
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57‐2: Distinguished Paper: Laser‐Addressed Full‐Color Photo‐Quality Rewritable Sheets Based on Thermochromic Systems with Leuco Dyes by Kaino, Yuriko, Kurihara, Kenichi, Shuto, Aya, Mizuno, Hiroshi, Asaoka, Satoko, Ishida, Takehisa, Takagi, Kenji, Takahashi, Isao, Amago, Hirohisa, Takeuchi, Taichi, Tejima, Asuka, Watanabe, Maho, Oishi, Yuki, Kamei, Takahiro, Nomoto, Kazumasa

“…We have developed a laser‐addressed full‐color rewritable sheet based on a thermochromic system with leuco dyes. It achieved photographic quality images with a…”
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Friction force microscopy study of the Langmuir-Blodgett films with different molecular structures by FUJIWARA, I, KAMEI, T, SETO, J

“…The microscopic frictional properties of Langmuir-Blodgett (LB) films were investigated with a friction force microscope (FFM). At first, the microscopic…”
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Demonstration of Split-Gate Type Trigate Flash Memory With Highly Suppressed Over-Erase by Kamei, Takahiro, Yongxun Liu, Matsukawa, T., Endo, K., O'uchi, S., Tsukada, J., Yamauchi, H., Ishikawa, Y., Hayashida, T., Sakamoto, K., Ogura, A., Masahara, M.

“…The functional split-gate type trigate flash memory cell transistors have successfully been fabricated for the first time, and their threshold voltage (V t )…”
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Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistors by Kamei, Takahiro, Liu, Yongxun, Endo, Kazuhiko, O'uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Ishikawa, Yuki, Hayashida, Tetsuro, Matsukawa, Takashi, Sakamoto, Kunihiro, Ogura, Atsushi, Masahara, Meishoku

“…We have comparatively investigated the electrical characteristics including threshold voltage ($V_{\text{th}}$) variability and mobility by fabricating n +…”
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Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation by Kamei, Takahiro, Liu, Yongxun, Matsukawa, Takashi, Endo, Kazuhiko, O'uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Ishikawa, Yuki, Hayashida, Tetsuro, Sakamoto, Kunihiro, Ogura, Atsushi, Masahara, Meishoku

“…Floating-gate (FG)-type tri-gate flash memories with an improved inter-poly dielectric (IPD) layer have been successfully fabricated by introducing a newly…”
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Fabrication of Floating-Gate-Type Fin-Channel Double- and Tri-Gate Flash Memories and Comparative Study of Their Electrical Characteristics by Liu, Yongxun, Kamei, Takahiro, Matsukawa, Takashi, Endo, Kazuhiko, O'uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Ishikawa, Yuki, Hayashida, Tetsuro, Sakamoto, Kunihiro, Ogura, Atsushi, Masahara, Meishoku

“…Floating-gate (FG)-type fin-channel double-gate (DG) and tri-gate (TG) flash memories with different control-gate (CG) lengths ($L_{\text{CG}}$) from 76 to 256…”
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Experimental Study of Floating-Gate-Type Metal--Oxide--Semiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application by Liu, Yongxun, Guo, Ruofeng, Kamei, Takahiro, Matsukawa, Takashi, Endo, Kazuhiko, O'uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Ishikawa, Yuki, Hayashida, Tetsuro, Sakamoto, Kunihiro, Ogura, Atsushi, Masahara, Meishoku

“…The floating-gate (FG)-type metal--oxide--semiconductor (MOS) capacitors with planar (planar-MOS) and three-dimensional (3D) nanosize triangular…”
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