Search Results - "Kambham, A. K."

Atom probe analysis of a 3D finFET with high- k metal gate by Gilbert, M., Vandervorst, W., Koelling, S., Kambham, A.K.

“…The atom probe analysis of a full gate stack (metal gate/high- k dielectric) in a 3D finFET is reported. The measurement reliability in this kind of…”
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Atom-probe for FinFET dopant characterization by Kambham, A.K., Mody, J., Gilbert, M., Koelling, S., Vandervorst, W.

“…With the continuous shrinking of transistors and advent of new transistor architectures to keep in pace with Moore's law and ITRS goals, there is a rising…”
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Characteristics of cross-sectional atom probe analysis on semiconductor structures by Koelling, S., Innocenti, N., Hellings, G., Gilbert, M., Kambham, A.K., De Meyer, K., Vandervorst, W.

“…The laser-assisted Atom Probe has been proposed as a metrology tool for next generation semiconductor technologies requiring sub-nm spatial resolution. In…”
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Analysis of dopant diffusion and defects in Fin structure using an atomistic kinetic Monte Carlo approach by Noda, T., Kambham, A. K., Vrancken, C., Thean, A., Horiguchi, N., Vandervorst, W.

“…An analysis of dopant diffusion and defects in 3D Fin structure using an atomistic lattice kinetic Monte Carlo (KMC) approach are shown. Atomistic KMC…”
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Dopant and carrier profiling for 3D-device architectures by Mody, J., Kambham, A. K., Zschatzsch, G., Chiarella, T., Collaert, N., Witters, L., Eyben, P., Gilbert, M., Kolling, S., Schulze, A., Hoffmann, T., Vandervorst, W.

“…In this paper, we discuss the metrology concepts that can be applied to characterize dopant/carrier profiles in FinFET-based structures. We demonstrate their…”
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High performance n-MOS finFET by damage-free, conformal extension doping by Zschatzsch, G., Sasaki, Y., Hayashi, S., Togo, M., Chiarella, T., Kambham, A. K., Mody, J., Douhard, B., Horiguchi, N., Mizuno, B., Ogura, M., Vandervorst, W.

“…A solution for conformal n-type finFET extension doping is demonstrated, yielding I ON values of 1.23 mA/μm at I OFF =100 nA/um at 1V. This high device…”
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Atom Probe Tomography for 3D-dopant analysis in FinFET devices by Kambham, A. K., Zschaetzsch, G., Sasaki, Y., Togo, M., Horiguchi, N., Mody, J., Florakis, A., Gajula, D. R., Kumar, A., Gilbert, M., Vandervorst, W.

“…As the nano scale device performance depends on the detailed engineering of the dopant distribution, advanced doping processes are required. Progressing…”
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Dopant and carrier profiling in FinFET-based devices with sub-nanometer resolution by Mody, J., Kambham, A.K., Zschatzsch, G., Schatzer, P., Chiarella, T., Collaert, N., Witters, L., Jurczak, M., Horiguchi, N., Gilbert, M., Eyben, P., Kolling, S, Schulze, A., Hoffmann, T-Y., Vandervorst, W.

“…Atom probe tomography (APT) in conjunction with scanning spreading resistance microscopy (SSRM) is demonstrated for the first time to profile dopant and…”
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3D-carrier profiling in FinFETs using scanning spreading resistance microscopy by Mody, J., Zschatzsch, G., Kolling, S., De Keersgieter, A., Eneman, G., Kambham, A. K., Drijbooms, C., Schulze, A., Chiarella, T., Horiguchi, N., Hoffmann, T-Y, Eyben, P., Vandervorst, W.

“…In this work, we demonstrate for the first time 3D-carrier profiling in FinFETs with nm-spatial resolution using SSRM. The results provide information on gate…”
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Scanning spreading resistance microscopy for carrier profiling beyond 32nm node by Mody, J., Zschatzsch, G., Kolling, S., De Keersgieter, A., Eneman, G., Kambham, A. K., Drijbooms, C., Schulze, A., Chiarella, T., Horiguchi, N., Eyben, P., Vandervorst, W.

“…With the continued scaling of CMOS devices down to 32nm node and beyond, device performance is very sensitive to the lateral diffusion mechanisms influencing…”
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Junction strategies for 1x nm technology node with FINFET and high mobility channel by Horiguchi, N., Zschaetzsch, G., Sasaki, Y., Kambham, A. K., Douhard, B., Togo, M., Hellings, G., Mitard, J., Witters, L., Eneman, G., Noda, T., Collaert, N., Vandervorst, W., Thean, A.

“…Junction strategies for FINFETs and high mobility channel devices in 1× nm node are discussed. Doping conformality and doping damage control are the keys for…”
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