Search Results - "Kamakura, Y."

Phonon drag effect on Seebeck coefficient of ultrathin P-doped Si-on-insulator layers by Salleh, F., Oda, T., Suzuki, Y., Kamakura, Y., Ikeda, H.

“…The contribution of the phonon drag effect to the Seebeck coefficient of P-doped ultrathin Si-on-insulator (SOI) layers with a thickness of 9–100 nm is…”
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Effect of phonon-boundary scattering on phonon-drag factor in Seebeck coefficient of Si wire by Fauziah, K., Suzuki, Y., Nogita, T., Kamakura, Y., Watanabe, T., Salleh, F., Ikeda, H.

“…For highly efficient thermoelectric devices with Si nanostructures, we have fabricated and characterized micro/nanometer-scaled Si wires preserving the…”
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SUN-P042: Efficacy of a New Intervention “Wiping Plus Providing Oral Nutritional Supplements” in Preventing Aspiration Pneumonia in Elderly People: A Multicenter, Randomized Comparative Trial by Ohara, H, Higashiguchi, T, Kuzuya, M, Kikutani, T, Sanada, H, Maruyama, M, Matsuzaki, M, Kamakura, Y, Ito, A, Mori, N

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Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films by Zushi, T, Ohdomari, I, Watanabe, T, Kamakura, Y, Taniguchi, K

“…A series of molecular dynamics (MD) simulations is conducted to investigate the dynamics of longitudinal optical (LO) phonon in Si nano-structure confined with…”
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Performance Enhancement of pMOSFETs Depending on Strain, Channel Direction, and Material by Uchida, M., Kamakura, Y., Taniguchi, K.

“…In the framework of k.p band calculation, we investigate the modulation of the low-field mobility and the injection velocity of holes in Si- and Ge-channel…”
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Atomic configuration study of implanted F in Si based on experimental evidences and ab initio calculations by Hirose, T., Shano, T., Kim, R., Tsuji, H., Kamakura, Y., Taniguchi, K.

“…The effects of F on B diffusion and activation in Si were investigated through experiments and ab initio calculations. It was found that F atoms captured by…”
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Ab initio study of avalanche breakdown in diamond for power device applications by Kamakura, Y., Kotani, T., Konaga, K., Minamitani, N., Wakimura, G., Mori, N.

“…We investigate the high-field carrier transport in diamond using a full band Monte Carlo method based on ab initio calculations. The calculated breakdown field…”
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Photoluminescence study of {311}defect-precursors in self-implanted silicon by Tsuji, H., Kim, R., Hirose, T., Shano, T., Kamakura, Y., Taniguchi, K.

“…Photoluminescence (PL) study using Ar laser revealed that {311}defect-precursors exist in the samples annealed at either 620 or 670 °C after silicon…”
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Monte Carlo simulation of hot-electron-induced dielectric breakdown in thin silicon dioxide films by Kamakura, Yoshinari, Ishida, Akihiro, Taniguchi, Kenji

“…Dielectric breakdown of gate oxide films in MOSFETs is studied by using a substrate hot electron (SHE) injection technique. Monte Carlo simulations are…”
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Energy Relaxation Length for Ballistic Electron Transport in SiO2 by Tomita, T., Kamakura, Y., Taniguchi, K.

“…Electron transport in thin SiO2 films is investigated by using carrier separation technique. Average electron energy as a function of traveling distance in…”
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Analysis of ultra-high-speed image sensor based on drift-diffusion model by Le Thi Yen, Minamitani, N., Kamakura, Y., Etoh, T. G.

“…Electron travel time distribution in the backside illuminated in-situ storage image sensor (BSI ISIS) is analyzed based on the drift diffusion model coupled…”
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A new soft breakdown model for thin thermal SiO/sub 2/ films under constant current stress by Tomita, T., Utsunomiya, H., Sakura, T., Kamakura, Y., Taniguchi, K.

“…Soft breakdown properties of thin gate oxide films are investigated using a constant current stress measurement. The soft breakdown can be classified into two…”
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The impact of increased deformation potential at MOS interface on quasi-ballistic transport in ultrathin channel MOSFETs scaled down to sub-10 nm channel length by Koba, S., Ishida, R., Kubota, Y., Tsuchiya, H., Kamakura, Y., Mori, N., Ogawa, M.

“…It is a common view that ballistic transport is enhanced due to channel length scaling because of decreased scattering number. In this study, based on Monte…”
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A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon by Abramo, A., Baudry, L., Brunetti, R., Castagne, R., Charef, M., Dessenne, F., Dollfus, P., Dutton, R., Engl, W.L., Fauquembergue, R., Fiegna, C., Fischetti, M.V., Galdin, S., Goldsman, N., Hackel, M., Hamaguchi, C., Hess, K., Hennacy, K., Hesto, P., Higman, J.M., Iizuka, T., Jungemann, C., Kamakura, Y., Kosina, H., Kunikiyo, T., Laux, S.E., Hongchin Lin, Maziar, C., Mizuno, H., Peifer, H.J., Ramaswamy, S., Sano, N., Scrobohaci, P.G., Selberherr, S., Takenaka, M., Ting-Wei Tang, Taniguchi, K., Thobel, J.L., Thoma, R., Tomizawa, K., Tomizawa, M., Vogelsang, T., Shiuh-Luen Wang, Xiaolin Wang, Chiang-Sheng Yao, Yoder, P.D., Yoshii, A.

“…In this work we have undertaken a comparison of several previously reported computer codes which solve the semiclassical Boltzmann equation for electron…”
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Toward 1Gfps: Evolution of ultra-high-speed image sensors -ISIS, BSI, multi-collection gates, and 3D-stacking by Etoh, T. G., Dao, V. T. S., Shimonomura, K., Charbon, E., Zhang, C., Kamakura, Y., Matsuoka, T.

“…Evolution of ultra-high-speed image sensors is reviewed. Currently, the highest frame rate achieved by a solid-state image sensor is 16.7 Mfps, while the…”
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Nano-device simulation from an atomistic view by Mori, N., Mil'nikov, G., Minari, H., Kamakura, Y., Zushi, T., Watanabe, T., Uematsu, M., Itoh, K. M., Uno, S., Tsuchiya, H.

“…Fluctuations of device characteristics due to random discrete dopant (RDD) distribution are numerically investigated in ultra-small Si nanowire transistors…”
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Analysis of anisotropic ionization coefficient in bulk 4H-SiC with full-band Monte Carlo simulation by Fujita, R., Konaga, K., Ueoka, Y., Kamakura, Y., Mori, N., Kotani, T.

“…High-field electron transport characteristics in bulk 4H-SiC are simulated with the full-band Monte Carlo method, and anisotropy of the ionization coefficient…”
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A Self-Consistent Compact Model of Ballistic Nanowire MOSFET With Rectangular Cross Section by Numata, T., Uno, S., Hattori, J., Mil'nikov, G., Kamakura, Y., Mori, N., Nakazato, K.

“…We propose a compact model of ballistic gate-all-around metal-oxide-semiconductor field-effect transistors. In this model, the potential distribution in the…”
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Full band Monte Carlo simulation of impact ionization in wide bandgap semiconductors based on ab initio calculation by Kamakura, Y., Fujita, R., Konaga, K., Ueoka, Y., Mori, N., Kotani, T.

“…A full band Monte Carlo simulation based on ab initio calculations is presented to investigate high-field carrier transport characteristics. The band structure…”
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Review of the literature on technology concerning nursing of deglutition disorders--on patients with cerebrovascular disorders by Kamakura, Y

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