Search Results - "Kalma, A. H."
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Radiation effects on photonic imagers-a historical perspective
Published in IEEE transactions on nuclear science (01-06-2003)“…Photonic imagers are being increasingly used in space systems, where they are exposed to the space radiation environment. Unique properties of these devices…”
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Development of high-operating-temperature infrared detectors with gold-doped Hg0.70Cd0.30Te
Published in Applied physics letters (23-02-2004)“…Excellent high-operating-temperature infrared photodiodes in the medium-wavelength infrared spectral band with cutoff wavelengths ∼5 μm at 77 K were fabricated…”
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3
Ionizing Radiation Effects in HgCdTe MIS Capacitors Containing a Photochemically-Deposited SiO2 Layer
Published in IEEE transactions on nuclear science (01-01-1983)“…Ionization-induced charge buildup in photochemically-deposited SiO2 on HgCdTe substrates has been examined. Irradiation at 95 K produces a net positive trapped…”
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4
Electrical Pulse Burnout Testing of Light-Emitting Diodes
Published in IEEE transactions on nuclear science (01-12-1975)“…Electrical pulse burnout thresholds were measured in GaAs, GaAsP, and GaP light-emitting diodes (LEDs) by studying the degradation in light output and the…”
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5
Hardening of Solar Cells against Low-Energy Rear-Incident Protons
Published in IEEE transactions on nuclear science (01-01-1975)“…The damage mechanisms resulting from normally incident low-energy proton irradiation on the back side of standard n/p silicon solar cells have been…”
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6
Electrical Properties of Electron-Irradiated GaAs
Published in IEEE transactions on nuclear science (01-01-1972)“…The electrical properties of electron-irradiated GaAs have been studied. A defect with an energy level located at Ec - 0.15 eV has been identified. It is…”
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Photoconductivity Studies of Defects in Silicon: Divacancy-Associated Energy Levels
Published in Physical review (01-01-1968)Get full text
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8
Energy and Temperature Dependence of Electron Irradiation Damage in GaAs
Published in IEEE transactions on nuclear science (01-01-1975)“…The energy and temperature dependences of electron damage in GaAs have been measured. The energy dependence data have been compared with theoretical…”
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High operating temperature FPAs for lighter, lower power satellite surveillance in the infrared
Published in 2001 IEEE Aerospace Conference Proceedings (Cat. No.01TH8542) (01-01-2001)“…The AFRL has pursued high temperature IR FPAs for three years. A 10 K increase has been obtained to date by thinning the HgCdTe base-layer. A contract has…”
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Conference Proceeding -
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Irradiation-Produced Band-Tailing in Semiconductors
Published in IEEE transactions on nuclear science (01-01-1973)“…Band-tailing produced by electron irradiation at room temperature has been studied in various semiconductor materials using infrared absorption. The…”
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Ionizing Radiation Effects in HgCdTe MIS Capacitors
Published in IEEE transactions on nuclear science (01-01-1981)“…Ionization-induced charge buildup in HgCdTe MIS capacitors has been examined. Most of the capacitors studied contained ZnS as the insulator and had different…”
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12
Radiation Testing of Trimetal Infrared Detectors
Published in IEEE transactions on nuclear science (01-12-1979)“…Long wavelength infrared PbSnTe and short wavelength infrared HgCdTe photovoltaic detector arrays representative of recent technology have been radiation…”
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13
Radiation Testing of a Fiber Optics Data Link
Published in IEEE transactions on nuclear science (01-12-1976)“…A fiber optics data link modeled after general designs discussed in satellite systems studies has been designed, built, and radiation tested. Radiation effects…”
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14
Interstitial Defects in p-Type Silicon
Published in IEEE transactions on nuclear science (01-01-1969)“…Two defects introduced in boron- and aluminum-doped silicon by 1.5-MeV electron irradiation have been studied by means of infrared photoconductivity. The…”
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15
Photoconductivity Studies of Defects in p -Type Silicon: Boron Interstitial and Aluminum Interstitial Defects
Published in Physical review. B, Solid state (01-01-1970)Get full text
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Radiation Testing of PIN Photodiodes
Published in IEEE transactions on nuclear science (1978)“…PIN photodiodes representative of commercially available device types were radiation tested in total dose, neutron fluence, and ionization pulse environments…”
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Effects of Low-Dose-Rate Radiation on Opto-Electronic Components and the Consequences upon Fiber Optic Data Link Performance
Published in IEEE transactions on nuclear science (1979)“…Tests have been performed to examine the effects of low-dose-rate radiation exposure on opto-electronic components that can be used in the implementation of…”
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18
Neutron Damage Mechanisms in Silicon at 10°k
Published in IEEE transactions on nuclear science (1977)“…Neutron-irradiation effects on the photoconductivity and electrical properties of arsenic-doped silicon were measured at 10K so that the degradation mechanisms…”
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19
4Π space radiation of solar cells
Published in IEEE transactions on nuclear science (01-12-1976)“…A study was conducted to evaluate the performance of various solar cell types exposed on both surfaces to isotropic irradiation by protons and electrons which…”
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4-pi space radiation of solar cells
Published in IEEE transactions on nuclear science (01-12-1976)“…A description is given of an investigation in which solar cells were irradiated on both surfaces. An isotropic flux of particles with a simulated space energy…”
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Journal Article