Search Results - "Kalkofen, Bodo"

Fabrication and investigation of three-dimensional ferroelectric capacitors for the application of FeRAM by Yeh, Chia-Pin, Lisker, Marco, Kalkofen, Bodo, Burte, Edmund P.

“…Ferroelectric capacitors made by lead zirconate titanate (PZT) thin films and iridium electrodes are fabricated on three-dimensional structures and their…”
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Atomic Layer Deposition of the Conductive Delafossite PtCoO2 by Hagen, Dirk J., Yoon, Jiho, Zhang, Haojie, Kalkofen, Bodo, Silinskas, Mindaugas, Börrnert, Felix, Han, Hyeon, Parkin, Stuart S. P.

“…The first atomic layer deposition process for a ternary oxide is reported, which contains a metal of the platinum group, the delafossite PtCoO2. The deposition…”
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Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon by Kalkofen, Bodo, Amusan, Akinwumi A., Bukhari, Muhammad S. K., Garke, Bernd, Lisker, Marco, Gargouri, Hassan, Burte, Edmund P.

“…Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for…”
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High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma by Yeh, Chia-Pin, Lisker, Marco, Kalkofen, Bodo, Burte, Edmund P.

“…Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence…”
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Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon by Beljakowa, Svetlana, Pichler, Peter, Kalkofen, Bodo, Hübner, René

“…Oxides containing group III or group V elements (B2O3/Sb2O5 and P2O5/Sb2O5) are grown by plasma‐assisted atomic layer deposition (ALD) on single‐crystalline…”
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Ag films grown by remote plasma enhanced atomic layer deposition on different substrates by Amusan, Akinwumi A., Kalkofen, Bodo, Gargouri, Hassan, Wandel, Klaus, Pinnow, Cay, Lisker, Marco, Burte, Edmund P.

“…Silver (Ag) layers were deposited by remote plasma enhanced atomic layer deposition (PALD) using Ag(fod)(PEt3) (fod =…”
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Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process by Baik, Seunghun, Kwon, Hyeokjin, Paeng, Chuck, Zhang, He, Kalkofen, Bodo, Jang, Jae Eun, Kim, Y. S., Kwon, Hyuk-Jun

“…To achieve a high concentration of dopants over <inline-formula> <tex-math notation="LaTeX">{1} \times {10}^{{20}} </tex-math></inline-formula> cm −3 on…”
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Atomic Layer Deposition of the Conductive Delafossite PtCoO 2 by Hagen, Dirk J., Yoon, Jiho, Zhang, Haojie, Kalkofen, Bodo, Silinskas, Mindaugas, Börrnert, Felix, Han, Hyeon, Parkin, Stuart S. P.

“…Abstract The first atomic layer deposition process for a ternary oxide is reported, which contains a metal of the platinum group, the delafossite PtCoO 2 . The…”
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Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds by Šilinskas, Mindaugas, Kalkofen, Bodo, Balasubramanian, Ramasubramanian, Batmanov, Anatoliy, Burte, Edmund P., Harmgarth, Nicole, Zörner, Florian, Edelmann, Frank T., Garke, Bernd, Lisker, Marco

“…Plasma atomic layer deposition of Ge-Sb-Te (GST) thin films using halogen-free precursors is reported. The Sb and Te precursors tris(aziridinyl)antimony (III)…”
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Investigation of oxide thin films deposited by atomic layer deposition as dopant source for ultra-shallow doping of silicon: Insulating Films on Semiconductors 2013 by KALKOFEN, Bodo, AMUSAN, Akinwumi A, LISKER, Marco, BURTE, Edmund P

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Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon by Kalkofen, Bodo, Amusan, Akinwumi A., Bukhari, Muhammad S. K., Burte, Edmund P., Garke, Bernd, Lisker, Marco, Gargouri, Hassan

“…Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for…”
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Observation of steplike sheet resistance increase of shallow doped bare silicon during initial contact to air by Kalkofen, Bodo, Burte, Edmund P.

“…Shallow doping of silicon was carried out by vapour phase surface adsorption of phosphine and subsequent diffusion and activation of phosphorus by conventional…”
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Investigation of oxide thin films deposited by atomic layer deposition as dopant source for ultra-shallow doping of silicon by Kalkofen, Bodo, Amusan, Akinwumi A., Lisker, Marco, Burte, Edmund P.

“…[Display omitted] •The application of ALD for fabrication of dopant source layers for Si is proposed.•Antimony oxide deposition by ALD from triethylantimony…”
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EVALUATION OF DIFFERENT METALORGANIC PRECURSORS FOR Ge-Sb-Te THIN FILM DEPOSITION by RESO, DENIS, SILINSKAS, MINDAUGAS, LISKER, MARCO, KALKOFEN, BODO, BURTE, EDMUND P.

“…In this work, various alkyl-precursors were tested, including: tetraethylgermanium (TEGe), tetraisopropylgermanium (TiPGe), triethyl-tert-butylgermanium…”
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Phosphorus diffusion into silicon after vapor phase surface adsorption of phosphine by Kalkofen, Bodo, Lisker, Marco, Burte, Edmund P.

“…Shallow phosphorus doping of silicon was carried out by using a damage-free two-step doping process. Phosphorus was deposited on to the silicon surface by…”
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A simple two-step phosphorus doping process for shallow junctions by applying a controlled adsorption and a diffusion in an oxidising ambient by Kalkofen, Bodo, Lisker, Marco, Burte, Edmund P.

“…A simple phosphorus doping technique for shallow junctions is presented. The low pressure doping process was carried out in a single RTP reactor chamber by…”
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Atomic layer deposition of phosphorus oxide films as solid sources for doping of semiconductor structures by Kalkofen, Bodo, Ahmed, Basheer, Beljakowa, Svetlana, Lisker, Marco, Kim, Y. S., Butte, Edmund P.

“…__ Plasma-assisted atomic layer deposition (PALD) was carried out for growing thin phosphorus oxide films onto flat and high-aspect ratio substrates. The…”
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Atomic layer deposited solid sources for doping of high aspect ratio semiconductor structures by Kalkofen, Bodo, Silinskas, Mindaugas, Lisker, Marco, Kim, Y. S., Burte, Edmund P.

“…Plasma-assisted atomic layer deposition (PALD) was carried out for growing thin oxide films containing dopants for silicon, germanium, and SiGe onto flat and…”
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Enhancing phosphorous doping level on Ge by Sb co-doping with non-beamline implantation methods by Paeng, Chuck, Zhang, He, Kalkofen, Bodo, Kim, Y S

“…Advanced inductively coupled plasma and atomic layer deposition (ALD) techniques with low ion energy have been used to demonstrate conformal shallow junctions…”
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