Search Results - "Kalkhoran, N.M."
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Nanostructured surface modification of ceramic-based microelectrodes to enhance biocompatibility for a direct brain-machine interface
Published in IEEE transactions on biomedical engineering (01-06-2004)“…Many different types of microelectrodes have been developed for use as a direct Brain-Machine Interface (BMI) to chronically recording single neuron action…”
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2
Suppression of parasitic bipolar effects and off-state leakage in fully-depleted SOI n-MOSFET's using Ge-implantation
Published in IEEE transactions on electron devices (01-12-1995)“…This work demonstrates a well-controlled technique of channel defect engineering, by implanting germanium into the channel of a Silicon-On-Insulator (SOI)…”
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Photoluminescence and cathodoluminescence of ion implanted ZnS and ZnGa{sub 2}O{sub 4} phosphors
Published 31-12-1996“…Photoluminescence (PL) and cathodoluminescence (CL) characteristics of ion implanted ZnS and ZnGa{sub 2}O{sub 4} phosphors have been investigated. The authors…”
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Conference Proceeding -
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Photoluminescence and cathodoluminescence of ion implanted ZnS and ZnGa/sub 2/O/sub 4/ phosphors
Published in IEEE Conference Record - Abstracts. 1996 IEEE International Conference on Plasma Science (1996)“…Summary form only given. Photoluminescence (PL) and cathodoluminescence (CL) characteristics of ion implanted ZnS and ZnGa/sub 2/O/sub 4/ phosphors have been…”
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Conference Proceeding
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5
Nanostructured porous silicon scaffolds for improved biocompatibility of thin film microelectrodes
Published in Proceedings of the 25th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (IEEE Cat. No.03CH37439) (2003)“…The promise of multichannel thin film microelectrodes for closed-loop neural prosthetic control has been hindered by the inability of these electrodes to…”
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Conference Proceeding -
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Charged particle radiation effects on bulk silicon and SIMOX SOI photodiodes
Published in IEEE transactions on nuclear science (01-12-1995)“…We report the fabrication of the first n-on-p photodiodes on silicon-on-insulator (SOI) substrates produced using the SIMOX (separation by implantation of…”
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"Camocell" technology: a new surface texturing process for high efficiency color-matched silicon solar cells
Published in Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) (2000)“…This paper introduces a simple approach for producing textured surfaces with a wide range of colors on single and multi-crystalline silicon wafers. We call the…”
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Conference Proceeding -
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Improvement of radiation hardness in fully-depleted SOI n-MOSFETs using Ge-implantation
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) (01-12-1994)“…This work demonstrates a well-controlled technique of channel defect engineering by implanting germanium into the channel of a silicon-on-insulator (SOI)…”
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Journal Article Conference Proceeding -
9
Lateral and vertical isolation by arsenic implantation into MOCVD-grown GaAs layers
Published in Journal of electronic materials (01-12-1993)“…We have demonstrated the formation of arsenic precipitates in GaAs using arsenic implantation and annealing. Electrical measurements show that very high…”
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High performance porous silicon solar cell development
Published in Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) (1994)“…We have fabricated Si solar cells from porous Si/bulk Si structures. Two cell types, having the junction within the porous Si or within the bulk Si, were…”
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Conference Proceeding -
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Improvement of breakdown voltage and off-state leakage in Ge-implanted SOI n-MOSFETs
Published in Proceedings of IEEE International Electron Devices Meeting (1993)“…This work demonstrates a well-controlled technique of channel defect engineering, by implanting Ge into the SOI device channel to act as a minority carrier…”
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Conference Proceeding -
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Effect of implantation energy on surface pitting of SIMOX
Published in 1991 IEEE International SOI Conference Proceedings (1991)“…A systematic study to determine the effect of dose and dose rate on implanting oxygen at 80 and 160 keV is reported. Samples were produced by implanting oxygen…”
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Characterization of low energy SIMOX (LES) structures
Published in 1990 IEEE SOS/SOI Technology Conference. Proceedings (1990)“…Formation of ultra-thin SOI material using the SIMOX process is addressed. Research has been carried out to determine the effect of total dose, dose step, dose…”
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Epitaxial GeSi strained layer on SIMOX for confinement of threading dislocations
Published in 1990 IEEE SOS/SOI Technology Conference. Proceedings (1990)“…Improvement of the crystalline quality of epitaxial silicon grown on separation by implantation of oxygen (SIMOX) material was investigated by confining the…”
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