Search Results - "Kalinina, K. V."

Radiative Recombination and Impact Ionization in Semiconductor Nanostructures (a Review) by Mikhailova, M. P., Ivanov, E. V., Danilov, L. V., Kalinina, K. V., Yakovlev, Yu. P., Kop’ev, P. S.

“…The processes of radiative recombination and impact ionization in light-emitting structures based on bulk semiconductors, heterostructures with high potential…”
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High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm) by Astakhova, A. P., Golovin, A. S., Il’inskaya, N. D., Kalinina, K. V., Kizhayev, S. S., Serebrennikova, O. Yu, Stoyanov, N. D., Horvath, Zs. J., Yakovlev, Yu. P.

“…Two designs of light-emitting diodes (LEDs) based on InAsSbP/InAs/InAsSbP double hetero-structures grown by metal-organic vapor phase epitaxy on p − and n…”
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Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers by Kalinina, K. V., Mikhailova, M. P., Zhurtanov, B. E., Stoyanov, N. D., Yakovlev, Yu. P.

“…The electroluminescence in isotype and anisotype light-emitting diode heterostructures grown by the method of liquid-phase epitaxy with large conduction-band…”
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Field injection of low-energy electrons into the ZnSe/CdSe/ZnSe heterostructure with the use of an ultra-high-vacuum tunneling microscope by Masalov, S. A., Kalinina, K. V., Evtikhiev, V. P., Ivanov, S. V.

“…The field emission injection of low-energy electrons ( E e ≈ 10 eV) into the ZnSe/CdSe/ZnSe heterostructure has been considered. The probe of the…”
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High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier by Petukhov, A. A., Zhurtanov, B. E., Kalinina, K. V., Stoyanov, N. D., Salikhov, H. M., Mikhailova, M. P., Yakovlev, Yu. P.

“…The electroluminescent properties of an n -GaSb/ n -InGaAsSb/ p -AlGaAsSb heterostructure with a high potential barrier in the conduction band (large…”
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Portable optical water-and-oil analyzer based on a mid-IR (1.6–2.4 μm) optron consisting of an LED array and a wideband photodiode by Kalinina, K. V., Molchanov, S. S., Stoyanov, N. D., Astakhova, A. P., Salikhov, Kh. M., Yakovlev, Yu. P.

“…An optical method for measuring the water and oil content using mid-IR (1.6–2.4 μm) LEDs and a wideband photodiode is suggested for the first time. This method…”
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Frequency-tuned semiconductor whispering-gallery-mode laser (λ = 2.35 µm) operating at room temperature by Imenkov, A. N., Sherstnev, V. V., Sipovskaya, M. A., Astakhova, A. P., Grebenshchikova, E. A., Monakhov, A. M., Kalinina, K. V., Boissier, G., Teissier, R., Baranov, A. N., Yakovlev, Yu. P.

“…Frequency tuning in a whispering gallery mode (WGM) semiconductor laser (λ = 2.35 µm) with a sector (half-disk) cavity has been studied. Pumping by current…”
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Continuous-wave disk WGM lasers (λ = 3.0 μm) based on InAs/InAsSbP heterostructures by Averkiev, N. S., Astakhova, A. P., Grebenshchikova, E. A., Il’inskaya, N. D., Kalinina, K. V., Kizhaev, S. S., Kislyakova, A. Yu, Monakhov, A. M., Sherstnev, V. V., Yakovlev, Yu. P.

“…IR semiconductor WGM lasers operating in the continuous-wave (CW) mode at a wavelength of 3.04 μm have been fabricated by metal-organic vapor-phase epitaxy on…”
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Photodiodes based on n-GaSb/n-GaInAsSb/p-AlGaAsSb heterostructures grown using rare-earth elements for the 1.1–2.4 μm spectral range by Imenkov, A. N., Zhurtanov, B. E., Astakhova, A. P., Kalinina, K. V., Mikhailova, M. P., Sipovskaya, M. A., Stoyanov, N. D.

“…Photodiodes sensitive in the wavelength range of 1.1–2.4 μm have been created based on n -GaSb/ n -GaInAsSb/ p -AlGaAsSb heterostructures with a narrow-gap n…”
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Low-noise photodiodes based on GaSb/GaInAsSb/AlGaAsSb double heterostructures for the 1–4.8 μm spectral range by Zhurtanov, B. E., Il’inskaya, N. D., Imenkov, A. N., Mikhaĭlova, M. P., Kalinina, K. V., Sipovskaya, M. A., Stoyanov, N. D., Yakovlev, Yu. P.

“…Photodiode heterostructures n -GaSb/ n -GaInAsSb/ p -AlGaAsSb with a red cutoff at 4.8 μm are studied. It is shown that making higher the content of In and Al…”
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Ultrafast frequency tuning in diode lasers based on InAsSb/InAsSbP heterostructures operating in the 3–4 μm spectral range by Astakhova, A. P., Danilova, T. N., Imenkov, A. N., Kalinina, K. V., Sipovskaya, M. A., Yakovlev, Yu. P.

“…We have studied the quality of frequency of tuning in a diode laser based on a double heterostructures of the n -InAsSbP/ n -InAsSb/ p -InAsSbP type driven by…”
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