Search Results - "Kalendra, V"

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  1. 1

    Lateral scan profiles of the recombination parameters correlated with distribution of grown-in impurities in HPHT diamond by Gaubas, E., Ceponis, T., Jasiunas, A., Kalendra, V., Pavlov, J., Kazuchits, N., Naumchik, E., Rusetsky, M.

    Published in Diamond and related materials (01-08-2014)
    “…The profiling of the microwave probed photoconductivity transients and of the time resolved photoluminescence spectra has simultaneously been performed on the…”
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    Journal Article
  2. 2

    Carrier transport in SiC crystals and radiation detectors as affected by defect traps and inhomogeneities by Kažukauskas, V., Kalendra, V., Vaitkus, J.-V.

    “…Carrier trapping and transport were investigated in 4H-SiC single crystals and radiation detectors produced from bulk vanadium-compensated semi-insulating…”
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    Journal Article
  3. 3

    Electrical Properties of Composites of Polystyrene and Multi-Walled Carbon Nanotubes by Kažukauskas, V., Kalendra, V., Vainorius, N., Bumby, C. W., Ludbrook, B. M., Kaiser, A. B.

    Published in Molecular Crystals and Liquid Crystals (03-05-2012)
    “…The dependencies of electrical conductivity on the electrical field and temperature of high-resistivity polystyrene/carbon nanotube (CNT) composites were…”
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    Journal Article
  4. 4

    Influence of irradiation by 24 GeV protons on the properties of 4H–SiC radiation detectors by Kažukauskas, V., Jasiulionis, R., Kalendra, V., Vaitkus, J.-V.

    Published in Diamond and related materials (01-04-2007)
    “…We had investigated the effects of the irradiation by 24 GeV protons with the doses from 10 13 cm − 2 up to 10 16 cm − 2 on the properties of radiation…”
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    Journal Article Conference Proceeding
  5. 5

    Variation of defect spectra in Si ionizing radiation detectors depending on irradiation by Kalendra, V., Kažukauskas, V., Vainorius, N., Vaitkus, J. V., Bozhko, V.

    Published in Materialwissenschaft und Werkstofftechnik (01-01-2011)
    “…The defect properties of Si ionizing radiation detectors were investigated depending on the irradiation by high energy neutrons. The investigations were…”
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    Journal Article
  6. 6

    Photoconductivity spectra and deep levels in the irradiated p +–n–n + Si detectors by Kalendra, V., Gaubas, E., Kazukauskas, V., Zasinas, E., Vaitkus, J.

    “…The photoconductivity spectra were investigated in p +–n–n + Si detectors according to the WODEAN project of CERN-RD50 collaboration. The samples were…”
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    Journal Article
  7. 7

    Photoconductivity spectra and deep levels in the irradiated p super(+-n-n) super(+) Si detectors by Kalendra, V, Gaubas, E, Kazukauskas, V, Zasinas, E, Vaitkus, J

    “…The photoconductivity spectra were investigated in p super(+-n-n) super(+) Si detectors according to the WODEAN project of CERN-RD50 collaboration. The samples…”
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    Journal Article
  8. 8

    Influence of irradiation by 24GeV protons on the properties of 4H-SiC radiation detectors by Kazukauskas, V, Jasiulionis, R, Kalendra, V, Vaitkus, J-V

    Published in Diamond and related materials (01-04-2007)
    “…We had investigated the effects of the irradiation by 24GeV protons with the doses from 1013cm-2 up to 1016cm-2 on the properties of radiation detectors…”
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    Journal Article
  9. 9

    Carrier transport and capture in GaN single crystals and radiation detectors and effect of the neutron irradiation by Kažukauskas, V., Kalendra, V., Vaitkus, J.-V.

    “…Carrier transport and trapping were investigated in GaN single crystals and semi-insulating epitaxial MOCVD layers by thermally stimulated current (TSC) and…”
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    Journal Article
  10. 10
  11. 11

    The effect of irradiation with high-energy protons on 4H-SiC detectors by Kažukauskas, V., Jasiulionis, R., Kalendra, V., Vaitkus, J. -V.

    Published in Semiconductors (Woodbury, N.Y.) (01-03-2007)
    “…The effect of irradiation of 4H-SiC ionizing-radiation detectors with various doses (as high as 10{sup 16} cm{sup -2}) of 24-GeV protons is studied. Isotopes…”
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    Journal Article