Search Results - "Kalaev, V.V"

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  1. 1

    Combined effect of DC magnetic fields and free surface stresses on the melt flow and crystallization front formation during 400mm diameter Si Cz crystal growth by Kalaev, V.V.

    Published in Journal of crystal growth (01-05-2007)
    “…The paper describes an analysis of 400mm diameter Si Czochralski growth with applied direct current magnetic fields of different configurations and strengths,…”
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    Journal Article
  2. 2

    Analysis of impurity transport and deposition processes on the furnace elements during Cz silicon growth by Smirnov, A.D., Kalaev, V.V.

    Published in Journal of crystal growth (15-01-2009)
    “…Czochralski growth of silicon crystals is always related to transport of impurities. The main impurities are oxygen and carbon. They react with furnace…”
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    Journal Article
  3. 3

    Gas flow effect on global heat transport and melt convection in Czochralski silicon growth by Kalaev, V.V., Evstratov, I.Yu, Makarov, Yu.N.

    Published in Journal of crystal growth (01-02-2003)
    “…We present a model of global heat transfer in Czochralski (CZ) systems for growth of silicon crystals, allowing a self-consistent calculation of radiative and…”
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    Journal Article
  4. 4

    Numerical analysis of sapphire crystal growth by the Kyropoulos technique by Demina, S.E., Bystrova, E.N., Lukanina, M.A., Mamedov, V.M., Yuferev, V.S., Eskov, E.V., Nikolenko, M.V., Postolov, V.S., Kalaev, V.V.

    Published in Optical materials (01-09-2007)
    “…A numerical model has been suggested to analyze processes occurring during sapphire crystal growth by the Kyropoulos technique. The model accounts for the…”
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    Journal Article
  5. 5

    Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth by Lukanin, D.P., Kalaev, V.V., Makarov, Yu.N., Wetzel, T., Virbulis, J., von Ammon, W.

    Published in Journal of crystal growth (15-05-2004)
    “…We present an updated version of the combined 2D/3D model of heat transfer and turbulent melt convection for industrial Czochralski (CZ) crystal growth. The 3D…”
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    Journal Article Conference Proceeding
  6. 6

    Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations by Kalaev, V.V., Lukanin, D.P., Zabelin, V.A., Makarov, Yu.N., Virbulis, J., Dornberger, E., Ammon, W.von

    Published in Journal of crystal growth (01-03-2003)
    “…We present 3D unsteady analysis of melt turbulent convection coupled with heat transfer in the crystal and crucible during 300 mm CZ Si crystal growth. The 3D…”
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    Journal Article
  7. 7

    3D unsteady analysis of melt flow and segregation during EFG Si crystal growth by Smirnova, O.V., Kalaev, V.V., Seidl, A., Birkmann, B.

    Published in Journal of crystal growth (01-04-2008)
    “…Ga transport in the melt during EFG Si crystal growth has been simulated within a 3D unsteady approach. The computations reveal reasons of effective…”
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    Journal Article
  8. 8

    3D unsteady numerical analysis of conjugate heat transport and turbulent/laminar flows in LEC growth of GaAs crystals by Smirnova, O.V., Kalaev, V.V.

    “…We present the conjugated 3D unsteady numerical analysis of industrial-scale LEC GaAs crystal growth, including the calculation of heat transfer in the crystal…”
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    Journal Article
  9. 9

    Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals by Evstratov, I.Yu, Kalaev, V.V., Zhmakin, A.I., Makarov, Yu.N., Abramov, A.G., Ivanov, N.G., Smirnov, E.M., Dornberger, E., Virbulis, J., Tomzig, E., von Ammon, W.

    Published in Journal of crystal growth (01-08-2001)
    “…We describe a computational model based on Large Eddy Simulation to calculate 3D unsteady turbulent melt convection in Czochralski systems for Si-crystal…”
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    Journal Article
  10. 10

    Modeling of point defect formation in silicon monocrystals by Zabelin, V.A., Kalaev, V.V.

    Published in Microelectronic engineering (01-09-2003)
    “…The prediction of characteristics of point defects in silicon crystals is the final goal of numerical simulation of the whole process of growth from the melt,…”
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    Journal Article
  11. 11

    Numerical study of 3D unsteady melt convection during industrial-scale CZ Si-crystal growth by Evstratov, I.Yu, Kalaev, V.V., Zhmakin, A.I., Makarov, Yu.N., Abramov, A.G., Ivanov, N.G., Korsakov, A.B., Smirnov, E.M., Dornberger, E., Virbulis, J., Tomzig, E., von Ammon, W.

    Published in Journal of crystal growth (01-04-2002)
    “…We present a computational model of 3D turbulent melt convection in Czochralski Si-crystal growth systems, based on the hybridization of Reynolds-averaged…”
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    Journal Article
  12. 12

    Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection by Kalaev, V.V., Lukanin, D.P., Zabelin, V.A., Makarov, Yu.N., Virbulis, J., Dornberger, E., von Ammon, W.

    “…We present 3D unsteady analysis of melt turbulent convection coupled with heat transfer in the crystal and crucible during CZ Si crystal growth. The 3D…”
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    Journal Article
  13. 13

    Melt Flow before Crystal Seeding in Cz Si Growth with Transversal MF by Iizuka, Masaya, Mukaiyama, Yuji, Demina, S.E., Kalaev, V.V.

    Published in Journal of crystal growth (15-06-2017)
    “…Industrial Cz growth of Si crystal of 300mm and higher diameter usually requires DC magnetic fields (MFs) to suppress turbulence in the melt. We present 3D…”
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    Journal Article
  14. 14

    Advanced chemical model for analysis of Cz and DS Si-crystal growth by Vorob’ev, A.N., Sid’ko, A.P., Kalaev, V.V.

    Published in Journal of crystal growth (15-01-2014)
    “…In growing bulk crystals from the melt, impurities contained in silicon feedstock, generated due to the melt-to-crucible contact and transported by the gas…”
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    Journal Article
  15. 15

    Development of oxygen transport model in Czochralski growth of silicon crystals by Smirnov, A.D., Kalaev, V.V.

    Published in Journal of crystal growth (01-06-2008)
    “…Oxygen is one of the most important impurities in Czochralski (Cz)-grown silicon crystals. The precise control of oxygen concentration in growing crystal, both…”
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    Journal Article
  16. 16

    Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt–crystal interface by Evstratov, I.Yu, Kalaev, V.V, Nabokov, V.N, Zhmakin, A.I, Makarov, Yu.N, Abramov, A.G, Ivanov, N.G, Rudinsky, E.A, Smirnov, E.M, Lowry, S.A, Dornberger, E, Virbulis, J, Tomzig, E, Ammon, W.v

    Published in Microelectronic engineering (01-05-2001)
    “…A computational model combining calculations of global heat and mass transfer in the entire CZ system with Large Eddy Simulation (LES) of turbulent melt…”
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    Journal Article Conference Proceeding
  17. 17

    3D unsteady computer modeling of industrial scale Ky and Cz sapphire crystal growth by Demina, S.E., Kalaev, V.V.

    Published in Journal of crystal growth (01-04-2011)
    “…In the present work, 3D features of melt convection during sapphire growth of 100 mm diameter Cz and of 200 mm diameter Ky crystals are studied. The approach…”
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    Journal Article
  18. 18

    Combined effect of DC magnetic fields and free surface stresses on the melt flow and crystallization front formation during 400 mm diameter Si Cz crystal growth by Kalaev, V.V.

    Published in Journal of crystal growth (01-05-2007)
    “…The paper describes an analysis of 400 mm diameter Si Czochralski growth with applied direct current magnetic fields of different configurations and strengths,…”
    Get full text
    Journal Article Conference Proceeding
  19. 19

    Modeling of dislocation dynamics in germanium Czochralski growth by Artemyev, V.V., Smirnov, A.D., Kalaev, V.V., Mamedov, V.M., Sidko, A.P., Podkopaev, O.I., Kravtsova, E.D., Shimansky, A.F.

    Published in Journal of crystal growth (15-06-2017)
    “…Obtaining very high-purity germanium crystals with low dislocation density is a practically difficult problem, which requires knowledge and experience in…”
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    Journal Article
  20. 20

    Optimization of heating conditions during Cz BGO crystal growth by Kolesnikov, A.V., Galenin, E.P., Sidletskiy, O.Ts, Kalaev, V.V.

    Published in Journal of crystal growth (01-12-2014)
    “…We have studied the effect of geometrical and physical parameters of additional lower heater on thermal conditions during BGO growth by the Czochralski…”
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    Journal Article