Search Results - "Kalaev, V.V"
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Combined effect of DC magnetic fields and free surface stresses on the melt flow and crystallization front formation during 400mm diameter Si Cz crystal growth
Published in Journal of crystal growth (01-05-2007)“…The paper describes an analysis of 400mm diameter Si Czochralski growth with applied direct current magnetic fields of different configurations and strengths,…”
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2
Analysis of impurity transport and deposition processes on the furnace elements during Cz silicon growth
Published in Journal of crystal growth (15-01-2009)“…Czochralski growth of silicon crystals is always related to transport of impurities. The main impurities are oxygen and carbon. They react with furnace…”
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3
Gas flow effect on global heat transport and melt convection in Czochralski silicon growth
Published in Journal of crystal growth (01-02-2003)“…We present a model of global heat transfer in Czochralski (CZ) systems for growth of silicon crystals, allowing a self-consistent calculation of radiative and…”
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4
Numerical analysis of sapphire crystal growth by the Kyropoulos technique
Published in Optical materials (01-09-2007)“…A numerical model has been suggested to analyze processes occurring during sapphire crystal growth by the Kyropoulos technique. The model accounts for the…”
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5
Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth
Published in Journal of crystal growth (15-05-2004)“…We present an updated version of the combined 2D/3D model of heat transfer and turbulent melt convection for industrial Czochralski (CZ) crystal growth. The 3D…”
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Journal Article Conference Proceeding -
6
Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations
Published in Journal of crystal growth (01-03-2003)“…We present 3D unsteady analysis of melt turbulent convection coupled with heat transfer in the crystal and crucible during 300 mm CZ Si crystal growth. The 3D…”
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7
3D unsteady analysis of melt flow and segregation during EFG Si crystal growth
Published in Journal of crystal growth (01-04-2008)“…Ga transport in the melt during EFG Si crystal growth has been simulated within a 3D unsteady approach. The computations reveal reasons of effective…”
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8
3D unsteady numerical analysis of conjugate heat transport and turbulent/laminar flows in LEC growth of GaAs crystals
Published in International journal of heat and mass transfer (2004)“…We present the conjugated 3D unsteady numerical analysis of industrial-scale LEC GaAs crystal growth, including the calculation of heat transfer in the crystal…”
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9
Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals
Published in Journal of crystal growth (01-08-2001)“…We describe a computational model based on Large Eddy Simulation to calculate 3D unsteady turbulent melt convection in Czochralski systems for Si-crystal…”
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10
Modeling of point defect formation in silicon monocrystals
Published in Microelectronic engineering (01-09-2003)“…The prediction of characteristics of point defects in silicon crystals is the final goal of numerical simulation of the whole process of growth from the melt,…”
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11
Numerical study of 3D unsteady melt convection during industrial-scale CZ Si-crystal growth
Published in Journal of crystal growth (01-04-2002)“…We present a computational model of 3D turbulent melt convection in Czochralski Si-crystal growth systems, based on the hybridization of Reynolds-averaged…”
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12
Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection
Published in Materials science in semiconductor processing (01-08-2002)“…We present 3D unsteady analysis of melt turbulent convection coupled with heat transfer in the crystal and crucible during CZ Si crystal growth. The 3D…”
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13
Melt Flow before Crystal Seeding in Cz Si Growth with Transversal MF
Published in Journal of crystal growth (15-06-2017)“…Industrial Cz growth of Si crystal of 300mm and higher diameter usually requires DC magnetic fields (MFs) to suppress turbulence in the melt. We present 3D…”
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14
Advanced chemical model for analysis of Cz and DS Si-crystal growth
Published in Journal of crystal growth (15-01-2014)“…In growing bulk crystals from the melt, impurities contained in silicon feedstock, generated due to the melt-to-crucible contact and transported by the gas…”
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15
Development of oxygen transport model in Czochralski growth of silicon crystals
Published in Journal of crystal growth (01-06-2008)“…Oxygen is one of the most important impurities in Czochralski (Cz)-grown silicon crystals. The precise control of oxygen concentration in growing crystal, both…”
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16
Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt–crystal interface
Published in Microelectronic engineering (01-05-2001)“…A computational model combining calculations of global heat and mass transfer in the entire CZ system with Large Eddy Simulation (LES) of turbulent melt…”
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Journal Article Conference Proceeding -
17
3D unsteady computer modeling of industrial scale Ky and Cz sapphire crystal growth
Published in Journal of crystal growth (01-04-2011)“…In the present work, 3D features of melt convection during sapphire growth of 100 mm diameter Cz and of 200 mm diameter Ky crystals are studied. The approach…”
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18
Combined effect of DC magnetic fields and free surface stresses on the melt flow and crystallization front formation during 400 mm diameter Si Cz crystal growth
Published in Journal of crystal growth (01-05-2007)“…The paper describes an analysis of 400 mm diameter Si Czochralski growth with applied direct current magnetic fields of different configurations and strengths,…”
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Journal Article Conference Proceeding -
19
Modeling of dislocation dynamics in germanium Czochralski growth
Published in Journal of crystal growth (15-06-2017)“…Obtaining very high-purity germanium crystals with low dislocation density is a practically difficult problem, which requires knowledge and experience in…”
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20
Optimization of heating conditions during Cz BGO crystal growth
Published in Journal of crystal growth (01-12-2014)“…We have studied the effect of geometrical and physical parameters of additional lower heater on thermal conditions during BGO growth by the Czochralski…”
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