Search Results - "Kagata, Tsubasa"

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  1. 1

    High-dielectric-constant hafnium silicate insulator for low-voltage pentacene field-effect transistors by Yan, Hu, Kagata, Tsubasa, Arima, Susumu, Sato, Hiroshi, Okuzaki, Hidenori

    “…We prepared HfSiOx on a heavily doped n‐type silicon wafer by sputtering of a HfSi (50:50 at%) target using Ar:N2:O2 as carrier gas. The HfSiOx layer thus…”
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    Journal Article
  2. 2

    Micrometer-scaled Channel Lengths of Organic Field-effect Transistors Patterned by Using PEDOT/PSS Microfibers by Yan, Hu, Kagata, Tsubasa, Mori, Yusaku, Harashina, Yuko, Hara, Yusuke, Okuzaki, Hidenori

    Published in Chemistry letters (05-01-2008)
    “…We have easily fabricated channel patterns of organic field-effect transistors (OFET), in which channel lengths were ca. 5 μm, by using wet-spun…”
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    Journal Article
  3. 3

    Unusual Shapes of C60 Crystals Formed at Liquid–Liquid Interfaces by Yan, Hu, Kagata, Tsubasa, Uchida, Takuya, Uematsu, Takayuki, Iriyama, Yu, Okuzaki, Hidenori

    Published in Chemistry letters (05-10-2009)
    “…We have found some unusually shaped C60 crystals which formed at liquid–liquid interfaces when m-xylene and ethanol were used as good and poor solvents,…”
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    Journal Article
  4. 4

    Influence of Surface Energy and Roughness of Substrate on Thin Pentacene and C60 Films Prepared by Vacuum Deposition by Yan, Hu, Uchida, Takuya, Kagata, Tsubasa, Iriyama, Yu, Okuzaki, Hidenori

    Published in Chemistry letters (05-06-2009)
    “…Substrate surface roughness predominantly influenced grain size of pentacene in vacuum-deposited thin films while surface energy of the substrate did not,…”
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    Journal Article
  5. 5

    Ambipolar pentacene/C60-based field-effect transistors with high hole and electron mobilities in ambient atmosphere by Yan, Hu, Kagata, Tsubasa, Okuzaki, Hidenori

    Published in Applied physics letters (12-01-2009)
    “…Ambipolar field-effect transistors (FETs) were fabricated with a heterostructure of pentacene/C60 in which the C60 layer functioned as an n-type channel while…”
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    Journal Article
  6. 6

    Ambipolar pentacene/ C 60 -based field-effect transistors with high holeand electron mobilities in ambient atmosphere by Yan, Hu, Kagata, Tsubasa, Okuzaki, Hidenori

    Published in Applied physics letters (16-01-2009)
    “…Ambipolar field-effect transistors (FETs) were fabricated with a heterostructure of pentacene/ C 60 in which the C 60 layer functioned as an n -type channel…”
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    Journal Article
  7. 7

    Micrometer-scaled OFET channel patterns fabricated by using PEDOT/PSS microfibers by Yan, Hu, Kagata, Tsubasa, Okuzaki, Hidenori

    Published in Synthetic metals (01-11-2009)
    “…We have easily fabricated channel patterns of organic field-effect transistors (OFETs), in which channel lengths were 5 μm, by using wet-spun…”
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    Journal Article Conference Proceeding
  8. 8

    Poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate): Correlation between colloidal particles and thin films by Yan, Hu, Arima, Susumu, Mori, Yusaku, Kagata, Tsubasa, Sato, Hiroshi, Okuzaki, Hidenori

    Published in Thin solid films (02-04-2009)
    “…We deal with correlation between sizes of colloidal particles and minimum thickness of spin-coated thin films of…”
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    Journal Article
  9. 9

    Low-Voltage P3HT Field-Effect Transistors Fabricated Using High-k Gate Insulators by Yan, Hu, Ikeda, Masashi, Kagata, Tsubasa, Okuzaki, Hidenori

    Published in Composite interfaces (01-01-2011)
    “…Hafnium silicate (HfSiO 5 ) thin film (ε r = 7.7) and strontium titanate (SrTiO 3 ) thin film (ε r = 12.1) were prepared on a heavily doped n-type silicon…”
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    Journal Article