Search Results - "KWON, K. H"

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    An observational study of hydrodynamic impact on water mass transport due to tidal power generation by Kim, J.W., Woo, S.-B., Song, J.I., Kwon, H.-K.

    Published in The Science of the total environment (10-02-2022)
    “…The world's largest Sihwa Tidal Power Plant (TPP), located on the west coast of Korea, was built in 2011 for the purpose of improving water quality and…”
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    Journal Article
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    Unbalanced sediment transport by tidal power generation in Lake Sihwa by Kim, J.W., Ha, H.K., Woo, S.-B., Kim, M.-S., Kwon, H.-K.

    Published in Renewable energy (01-07-2021)
    “…An in-situ observational study was conducted to understand the sediment transport processes disturbed by the flood generation type of Sihwa tidal power plant…”
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    Journal Article
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    Parameters of Gaseous Phase and Kinetics of Reactive Ion Etching of SiO2 in CF4/C4F8/Ar/He Plasma by Efremov, A. M., Kwon, K.-H.

    Published in Russian microelectronics (01-12-2022)
    “…The electrophysical parameters of plasma, concentrations of fluorine atoms, and kinetics of reactive-ion heterogeneous processes in the CF 4 + C 4 F 8 + Ar +…”
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    Journal Article
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    Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures by Efremov, A. M., Bobylev, A. V., Kwon, K.-H.

    Published in Russian microelectronics (01-08-2023)
    “…A comparative study of the electrophysical parameters of the plasma, the fluorine atom concentrations, and the kinetics of reactive-ion etching of silicon in…”
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    Journal Article
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    Kinetics of Reactive Ion Etching of Si, SiO2, and Si3N4 in C4F8 + O2 + Ar Plasma: Effect of the C4F8/O2 Mixing Ratio by Efremov, A. M., Kwon, K.-H.

    Published in Russian microelectronics (01-03-2021)
    “…The kinetics of reactive ion etching of an Si, SiO 2 , and Si 3 N 4 in the C 4 F 8 + O 2 + Ar mixture with a varied C 4 F 8 /O 2 mixing ratio under the…”
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    Journal Article
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    Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture by Efremov, A. M., Betelin, V. B., Kwon, K.-H.

    Published in Russian microelectronics (01-04-2023)
    “…The parameters of the gas phase and the kinetics of reactive ion etching of SiO 2 and Si 3 N 4 under conditions of an induction RF (13.56 MHz) discharge with a…”
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    Journal Article
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    On the Mechanisms Regulating the Plasma Composition and Kinetics of Heterogeneous Processes in a CF4 + CHF3 + Ar Mixture by Efremov, A. M., Betelin, V. B., Kwon, K.-H.

    Published in Russian microelectronics (01-10-2022)
    “…The influence of the initial composition of a CF 4 + CHF 3 + Ar mixture and bias power on the electrical parameters of the plasma, the composition of the gas…”
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    Journal Article
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    Plasma Parameters and Kinetics of Reactive-Ion Etching of Silicon in a C6F12O + Ar Mixture by Efremov, A. M., Betelin, V. B., Kwon, K.-H.

    Published in Russian microelectronics (01-08-2022)
    “…The characteristics of the gas phase and the kinetics of reactive-ion etching of silicon in a 50% C 6 F 12 O + 50% Ar plasma are studied. The study scheme…”
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    Journal Article
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    Mechanisms of Plasma Etching of Titanium, Indium, Tin, and Zinc Oxides in a Mixture of HBr + Ar by Efremov, A. M., Smirnov, S. A., Betelin, V. B., Kwon, K.-H.

    Published in Russian microelectronics (01-11-2021)
    “…The kinetics and mechanisms of reactive ion etching of titanium oxides (TiO 2 ), indium (In 2 O 3 ), tin (SnO 2 ), and zinc (ZnO) in HBr + Ar plasma. It is…”
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    Journal Article
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    Specific Features of the Kinetics of the Reactive-Ion Etching of Si and SiO2 in a CF4 + O2 Mixture in a Low Power Supply Mode by Efremov, A. M., Betelin, V. B., Kwon, K.-H.

    Published in Russian microelectronics (01-09-2021)
    “…The kinetics of reactive ion etching of Si and SiO 2 in the plasma of a high-frequency (13.56 MHz) inductive discharge in a CF 4 + O 2 mixture in the range of…”
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    Journal Article
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    Kinetics of the Volumetric and Heterogeneous Processes in the Plasma of a C4F8 + O2 + Ar Mixture by Efremov, A. M., Murin, D. B., Sobolev, A. M., Kwon, K.-H.

    Published in Russian microelectronics (2021)
    “…In this paper, we investigate the relationship between the external and internal plasma parameters in a C 4 F 8 + O 2 + Ar mixture under conditions of an…”
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    Journal Article
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    Kinetics and Mechanisms of Reactive-Ion Etching of Si and SiO2 in a Plasma of a Mixture of HBr + O2 by Efremov, A. M., Betelin, V. B., Kwon, K.-H.

    Published in Russian microelectronics (01-11-2020)
    “…In this paper, we investigate the kinetics and mechanisms of reactive-ion etching of Si and SiO 2 in the plasma of an HBr + O 2 mixture with a variable initial…”
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    Journal Article
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    Special Aspects of the Kinetics of Reactive Ion Etching of SiO2 in Fluorine-, Chlorine-, and Bromine-Containing Plasma by Efremov, A. M., Murin, D. B., Betelin, V. B., Kwon, K.-H.

    Published in Russian microelectronics (01-03-2020)
    “…The influence of the type of active gas and the ratio of the concentration of the components of the CF 4 + Ar, Cl 2 + Ar, and HBr + Ar mixtures on the…”
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    Journal Article
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    Concerning the Effect of Type of Fluorocarbon Gas on the Output Characteristics of the Reactive-Ion Etching Process by Efremov, A. M., Murin, D. B., Kwon, K.-H.

    Published in Russian microelectronics (01-05-2020)
    “…The comparative research of the parameters, steady-state composition, and the effects of heterogeneous interaction in the plasma of fluorocarbon gases C x H y…”
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    Journal Article
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    Parameters of Plasma and Way of Etching Silicon in a CF4 + CHF3 + O2 Mixture by Efremov, A. M., Murin, D. B., Kwon, K.-H.

    Published in Russian microelectronics (01-11-2019)
    “…The effect of the CF 4 /CHF 3 ratio in a CF 4 + CHF 3 + 9% O 2 mixture on the parameters of the gaseous phase and kinetics of etching of silicon under the…”
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    Journal Article
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    Plasma Parameters and Kinetics of Active Particles in the Mixture CHF3 + O2 + Ar by Efremov, A. M., Murin, D. B., Kwon, K.-H.

    Published in Russian microelectronics (2020)
    “…The effect of the O 2 /Ar component ratio in the CHF 3 + O 2 + Ar mixture on the electrical parameters of the plasma, kinetics of active particles, and their…”
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    Journal Article
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    Effect of dentinal tubule occlusion by dentifrice containing nano-carbonate apatite by LEE, S. Y., KWON, H. K., KIM, B. I.

    Published in Journal of oral rehabilitation (01-11-2008)
    “…Summary  This study evaluated the effects of the short‐term use of a dentifrice containing nano‐sized carbonate apatite (n‐CAP) on the occlusion of the…”
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    Journal Article
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    Oncological and functional results after the surgical treatment of parotid cancer by Chung, E.-J, Lee, S.-H, Baek, S.-H, Kwon, K.-H, Chang, Y.-J, Rho, Y.-S

    “…Abstract The objective of this study was to analyze the oncological and functional outcomes after the surgical treatment of parotid cancer. We reviewed 80…”
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    Parameters of Plasma and Kinetics of Active Particles in CF4 (CHF3) + Ar Mixtures of a Variable Initial Composition by Efremov, A. M., Murin, D. B., Kwon, K.-H.

    Published in Russian microelectronics (01-11-2018)
    “…— The electrophysical parameters of plasma and the kinetics of active particles in CF 4 + Ar and CHF 3 + Ar mixtures under induction RF (13.56 MHz) discharge…”
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    Journal Article