Search Results - "KURPS, Rainer"

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  1. 1
    Arsenic atomic layer doping in Si using AsH3

    Arsenic atomic layer doping in Si using AsH3 by Yamamoto, Yuji, Kurps, Rainer, Murota, Junichi, Tillack, Bernd

    Published in Solid-state electronics (01-08-2015)
    “…Atomic layer doping of arsenic (As-ALD) in Si is investigated using a single wafer reduced pressure chemical vapor deposition tool. Hydrogen-free and…”
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  2. 2
    Phosphorus atomic layer doping in Ge using RPCVD

    Phosphorus atomic layer doping in Ge using RPCVD by Yamamoto, Yuji, Kurps, Rainer, Mai, Christian, Costina, Ioan, Murota, Junichi, Tillack, Bernd

    Published in Solid-state electronics (01-05-2013)
    “…► Phosphorus (P) atomic layer doping (ALD) in Ge by CVD is investigated. ► Ge (100) surface is exposed to PH3 followed by Ge cap deposition. ► P adsorption is…”
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  3. 3
    B atomic layer doping of Ge

    B atomic layer doping of Ge by Yamamoto, Yuji, Köpke, Klaus, Kurps, Rainer, Murota, Junichi, Tillack, Bernd

    Published in Thin solid films (2010)
    “…B Atomic layer doping (B-ALD) of Ge is investigated at temperatures between 100 °C and 400 °C using a single wafer reduced pressure CVD system…”
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  4. 4
    SiGe p-n-p HBTs With 265-GHz fmax, 175-GHz fT, and 3.65-ps Gate Delay

    SiGe p-n-p HBTs With 265-GHz fmax, 175-GHz fT, and 3.65-ps Gate Delay by HEINEMANN, Bernd, RÜCKER, Holger, TRUSCH, Andreas, WOLANSKY, Dirk, YAMAMOTO, Yuji, BARTH, Rainer, DREWS, Jürgen, FURSENKO, Oksana, GRABOLLA, Thomas, KURPS, Rainer, MARSCHMEYER, Steffen, SCHEIT, Alexander, SCHMIDT, Detlef

    Published in IEEE electron device letters (2014)
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  5. 5
    SiGe p-n-p HBTs With 265-GHz f max, 175-GHz f T, and 3.65-ps Gate Delay

    SiGe p-n-p HBTs With 265-GHz f max, 175-GHz f T, and 3.65-ps Gate Delay by Heinemann, Bernd, Rucker, Holger, Barth, Rainer, Drews, Jurgen, Fursenko, Oksana, Grabolla, Thomas, Kurps, Rainer, Marschmeyer, Steffen, Scheit, Alexander, Schmidt, Detlef, Trusch, Andreas, Wolansky, Dirk, Yamamoto, Yuji

    Published in IEEE electron device letters (01-08-2014)
    “…SiGe p-n-p heterojunction bipolar transistors (HBTs) are presented with f T /f max values of 175 GHz/265 GHz and a minimum current mode logic ring oscillator…”
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  6. 6
    Use of ultrasound for metal cluster engineering in ion implanted silicon oxide

    Use of ultrasound for metal cluster engineering in ion implanted silicon oxide by Romanyuk, Andriy, Oelhafen, Peter, Kurps, Rainer, Melnik, Viktor

    Published in Applied physics letters (01-01-2007)
    “…This letter presents an approach to metal cluster engineering in silicon oxide that uses ultrasound vibration applied in situ during implantation. Analysis by…”
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  7. 7
    Use of ultrasound for metal cluster engineering in ion implantedsilicon oxide

    Use of ultrasound for metal cluster engineering in ion implantedsilicon oxide by Romanyuk, Andriy, Oelhafen, Peter, Kurps, Rainer, Melnik, Viktor

    Published in Applied physics letters (05-01-2007)
    “…This letter presents an approach to metal cluster engineering in silicon oxide that uses ultrasound vibration applied in situ during implantation. Analysis by…”
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  8. 8
    Selective vapor phase etching of SiGe by HCl in a RPCVD reactor

    Selective vapor phase etching of SiGe by HCl in a RPCVD reactor by Yamamoto, Yuji, Köpke, Klaus, Kurps, Rainer, Tillack, Bernd

    Published in Applied surface science (30-07-2008)
    “…Chemical vapor phase etching of epitaxial SiGe by HCl was investigated using a single wafer reduced pressure CVD (RPCVD) system. For the sample preparation,…”
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  9. 9
    P doping control during SiGe:C epitaxy

    P doping control during SiGe:C epitaxy by Yamamoto, Yuji, Tillack, Bernd, Köpke, Klaus, Kurps, Rainer

    Published in Thin solid films (05-06-2006)
    “…Phosphorus (P) doping during SiGe:C epitaxy by using reduced pressure chemical vapor deposition (RPCVD) was investigated with the aim to prevent non-intended…”
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  10. 10
    Arsenic atomic layer doping in Si using AsH3

    Arsenic atomic layer doping in Si using AsH3 by Yamamoto, Yuji, Kurps, Rainer, Murota, Juichi, Tillack, Bernd

    “…Results of arsenic atomic layer doping in Si (100) are presented in this study. Arsenic adsorption and segregation behavior on the Si(100) surface are also…”
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  11. 11
    Phosphorus Atomic Layer Doping in Ge Using RPCVD

    Phosphorus Atomic Layer Doping in Ge Using RPCVD by Yamamoto, Y., Kurps, R., Mai, C., Costina, I., Murota, J., Tillack, B.

    “…P atomic layer doping (P-ALD) of Ge is investigated at temperatures between 100 o C and 300 o C using a single wafer reduced pressure CVD system…”
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