Search Results - "KUDRIAVTSEV, Y"

Comparative analysis of corrosion of borosilicate glasses in water vapor by Kudriavtsev, Y., Asomoza, R.

“…A comparative analysis of interaction of various borosilicate glasses with water vapor is carried out in the work. The fundamental dependence of the observed…”
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Calculation of the surface binding energy for ion sputtered particles by Kudriavtsev, Y., Villegas, A., Godines, A., Asomoza, R.

“…In this paper, we consider a simple model, based on the electronegativity concept, which makes it possible to calculate the surface binding energy of any…”
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SIMS depth profiling of ‘frozen’ samples: in search of ultimate depth resolution regime by Kudriavtsev, Y., Hernandez, A., Asomoza, R., Gallardo, S., Lopez, M., Moiseev, K.

“…We have performed secondary ion mass spectrometry depth profiling analysis of III–V based hetero‐structures at different target temperatures and found that…”
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Electrical and optical properties of Si doped GaAs (631) layers studied as a function of the growth temperature by Vazquez-Cortas, D., Shimomura, S., Lopez-Lopez, M., Cruz-Hernandez, E., Gallardo-Hernandez, S., Kudriavtsev, Y., Mendez-Garcia, V.H.

“…The Si incorporation into GaAs layers grown by molecular beam epitaxy on GaAs (631)A substrates as a function of the growth temperature was studied. Atomic…”
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Critical distance for secondary ion formation: Experimental SIMS measurements by Kudriavtsev, Y., Gallardo, S., Villegas, A., Ramirez, G., Asomoza, R.

“…We have performed direct experimental measurements of the critical distance for the secondary ion formation process. To this end, we compared the…”
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Ionization probability of sputtered particles as a function of their energy Part II. Positive Si+ ions by KUDRIAVTSEV, Y, GALLARDO, S, VILLEGAS, A, RAMIREZ, G, ASOMOZA, R

“…In this paper we represent the experimental ionization probability of sputtered silicon atoms as a function of their energy, which has been obtained for…”
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Low energy shifted photoluminescence of Er 3+ incorporated in amorphous hydrogenated silicon–germanium alloys by López-Luna, E., Vidal, M.A., Rodríguez, A.G., Navarro-Contreras, H., Kudriavtsev, Y., Asomoza, R., Villegas, A.

“…Low energy shifted photoluminescence from isolated erbium ions incorporated into a-SiGe:H thin films is reported. The Er 3+ are thermally diffused from an…”
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Study of GeySi1-y:H films deposited by low frequency plasma by SANCHEZ, KOSAREV, A, TORRES, A, ILINSKII, A, KUDRIAVTSEV, Y, ASOMOZA, R, CABARROCAS, P. Roca I, ABRAMOV, A

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Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition: Effect of H 2 and Ar dilution by Kosarev, A., Torres, A., Hernandez, Y., Ambrosio, R., Zuniga, C., Felter, T.E., Asomoza, R., Kudriavtsev, Y., Silva-Gonzalez, R., Gomez-Barojas, E., Ilinski, A., Abramov, A.S.

“…We have studied structure and electrical properties of Si 1− Y Ge Y :H films deposited by low-frequency plasma-enhanced chemical vapor deposition over the…”
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Low energy shifted photoluminescence of Er3+ incorporated in amorphous hydrogenated silicon-germanium alloys by LOPEZ-LUNA, E, VIDAL, M. A, RODRIGUEZ, A. G, NAVARRO-CONTRERAS, H, KUDRIAVTSEV, Y, ASOMOZA, R, VILLEGAS, A

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Ordered Arrays of Ultrafine Au Nanoprisms by Means of Nanosphere Lithography and Ion Hammering Effect by Zárate-Reyes, J. M., Salinas-Fuentes, C., Kudriavtsev, Y., Cheang-Wong, J. C., Asomoza, R.

“…The search for new nanomaterials with precisely customized optical and geometric characteristics is highly suitable for potential applications in nanophotonics…”
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Structural characterization of semi-strained layer (GaAs) 1− x(Si 2) x/GaAs multilayers grown by magnetron sputtering by Rosendo, E, Rodrı́guez, A.G, Navarro-Contreras, H, Vidal, M.A, Asomoza, R, Kudriavtsev, Y

“…Typical multilayers structures consisting of 3 periods with layers of GaAs and (GaAs) 1− x (Si 2) x were grown using magnetron sputtering. Although these…”
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SIMS analysis of atomic composition of silicon-germanium films deposited by RF plasma discharge by Martinez, H. E., Kosarev, A., Kudriavtsev, Y.

“…In this work we study the atomic composition in SiGe:H films as a function of hydrogen dilution. Silane and germane fluxes are kept constant while hydrogen…”
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Impact of graphene as 2D interlayer on the growth of GaAs by CSVT on Si (100) and GaAs (100) substrates by Martínez-López, A.L., Cruz-Bueno, J.J., Trejo-Hernández, R., Rocha-Robledo, A.K.S., de-Luna-Bugallo, A., Kudriavtsev, Y., García-Salgado, G., Casallas-Moreno, Y.L., Mendoza-Álvarez, J.G.

“…GaAs layers were grown using the closed space vapor transport (CSVT) technique on GaAs (100) and Si (100) substrates, with and without Graphene (G) as 2D…”
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SIMS depth profiling of ‘frozen’ samples: in search of ultimate depth resolution regime: SIMS depth profiling of ‘frozen’ samples by Kudriavtsev, Y., Hernandez, A., Asomoza, R., Gallardo, S., Lopez, M., Moiseev, K.

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Effects of Mg incorporation in cubic GaN films grown by PAMBE near Ga rich conditions by Compeán-García, V.D., Moreno-García, H., López-Luna, E., Pérez Ladrón de Guevara, H., Escobosa Echavarría, A., Kudriavtsev, Y., Rodríguez-Aranda, F.J., Rodríguez, A.G., Vidal, M.A.

“…The structural and electrical properties of Mg-doped cubic GaN epi-layers grown by plasma-assisted molecular beam epitaxy (PAMBE) near Ga rich conditions are…”
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Phosphorous and Boron Incorporation and Its Effect on Electronic and Optical Properties of Ge:H Films Deposited by LF Plasma by Delgadillo, N, Kosarev, A, Torres, A J, Kudriavtsev, Y

“…In a previous work, the deposition conditions that provided low optical absorption related to both band tail and deep localized states have been found for both…”
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Ionization probability of sputtered particles as a function of their energy by Kudriavtsev, Y., Gallardo, S., Villegas, A., Ramirez, G., Asomoza, R.

“…In this paper we represent the experimental ionization probability of sputtered silicon atoms as a function of their energy, which has been obtained for…”
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SIMS analysis of residual gas elements with a Cameca IMS-6f ion microprobe by Kudriavtsev, Yu, Villegas, A., Godines, A., Asomoza, R.

“…In this paper, we present experimental data for SIMS analysis of residual gas elements (RGEs) with a Cameca IMS-6f ion microprobe. We considered a simple…”
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Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition: Effect of H2 and Ar dilution by Kosarev, A., Torres, A., Hernandez, Y., Ambrosio, R., Zuniga, C., Felter, T.E., Asomoza, R., Kudriavtsev, Y., Silva-Gonzalez, R., Gomez-Barojas, E., Ilinski, A., Abramov, A.S.

“…We have studied structure and electrical properties of Si1−YGeY:H films deposited by low-frequency plasma-enhanced chemical vapor deposition over the entire…”
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