Search Results - "KUDRAWIEC, R"

Temperature Dependence of the Indirect Gap and the Direct Optical Transitions at the High-Symmetry Point of the Brillouin Zone and Band Nesting in MoS2, MoSe2, MoTe2, WS2, and WSe2 Crystals by Kopaczek, J, Zelewski, S, Yumigeta, K, Sailus, R, Tongay, S, Kudrawiec, R

“…Following the rise of interest in the properties of transition metal dichalcogenides, many experimental techniques were employed to research them. However, the…”
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Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform by Mączko, H. S., Kudrawiec, R., Gladysiewicz, M.

“…It is shown that compressively strained Ge 1−x Sn x /Ge quantum wells (QWs) grown on a Ge substrate with 0.1 ≤ x ≤ 0.2 and width of 8 nm ≤ d ≤ 14 nm are a very…”
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Temperature Dependence of the Indirect Gap and the Direct Optical Transitions at the High-Symmetry Point of the Brillouin Zone and Band Nesting in MoS 2 , MoSe 2 , MoTe 2 , WS 2 , and WSe 2 Crystals by Kopaczek, J, Zelewski, S, Yumigeta, K, Sailus, R, Tongay, S, Kudrawiec, R

“…Following the rise of interest in the properties of transition metal dichalcogenides, many experimental techniques were employed to research them. However, the…”
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Carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells for laser applications in the mid-infrared spectral range by Rogowicz, E., Kopaczek, J., Polak, M. P., Delorme, O., Cerutti, L., Tournié, E., Rodriguez, J.-B., Kudrawiec, R., Syperek, M.

“…We present experimental studies on low-temperature ( T = 4.2 K ) carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells (QWs) with the nominal In content of…”
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SiNx/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy by Janicki, Ł., Li, H., Keller, S., Mishra, U. K., Kudrawiec, R.

“…Contactless electroreflectance studies coupled with numerical calculations are performed on in-situ SiN x capped N-polar III-nitride high electron mobility…”
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Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions by Dybała, F., Polak, M. P., Kopaczek, J., Scharoch, P., Wu, K., Tongay, S., Kudrawiec, R.

“…The electronic band structure of MoS 2 , MoSe 2 , WS 2 , and WSe 2 , crystals has been studied at various hydrostatic pressures experimentally by…”
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Stability of the intermediate band energy position upon temperature changes in GaNP and GaNPAs by Wełna, M., Żelazna, K., Létoublon, A., Cornet, C., Kudrawiec, R.

“…GaNxP1-x and GaNxP1-x-yAsy highly mismatched alloys (x ≤ 0.025 and y ≤ 0.4), promising candidates for intermediate band solar cell applications, were studied…”
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High-pressure Raman scattering in bulk HfS2: comparison of density functional theory methods in layered MS2 compounds (M = Hf, Mo) under compression by Ibáñez, J., Woźniak, T., Dybala, F., Oliva, R., Hernández, S., Kudrawiec, R.

“…We report high-pressure Raman-scattering measurements on the transition-metal dichalcogenide (TMDC) compound HfS 2 . The aim of this work is twofold: (i) to…”
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Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures by Janicki, L., Kunert, G., Sawicki, M., Piskorska-Hommel, E., Gas, K., Jakiela, R., Hommel, D., Kudrawiec, R.

“…The Fermi level position in (Ga,Mn)N has been determined from the period-analysis of GaN-related Franz-Keldysh oscillation obtained by contactless…”
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III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources by Muziol, G., Hajdel, M., Siekacz, M., Turski, H., Pieniak, K., Bercha, A., Trzeciakowski, W., Kudrawiec, R., Suski, T., Skierbiszewski, C.

“…Abstract In this paper we review the recent studies on wide InGaN quantum wells (QWs). InGaN QWs are known to suffer from an extremely high built-in…”
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Nitrogen-related intermediate band in P-rich GaNxPyAs1−x−y alloys by Zelazna, K., Gladysiewicz, M., Polak, M. P., Almosni, S., Létoublon, A., Cornet, C., Durand, O., Walukiewicz, W., Kudrawiec, R.

“…The electronic band structure of phosphorus-rich GaN x P y As 1−x−y alloys (x ~ 0.025 and y ≥ 0.6) is studied experimentally using optical absorption,…”
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Multicolor emission from intermediate band semiconductor ZnO1−xSex by Welna, M., Baranowski, M., Linhart, W. M., Kudrawiec, R., Yu, K. M., Mayer, M., Walukiewicz, W.

“…Photoluminescence and photomodulated reflectivity measurements of ZnOSe alloys are used to demonstrate a splitting of the valence band due to the band…”
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Contactless electroreflectance spectroscopy with a semitransparent capacitor made of a silver mesh of ultrathin lines by Ślusarz, A., Kopaczek, J., Dybała, F., Wiatrowska, A., Granek, F., Kudrawiec, R.

“…•Printing of semitransparent electrodes for contactless electroreflectance (CER).•CER signal is linearly proportional to the applied voltage.•CER is inversely…”
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Electronic band structure of compressively strained Ge1−xSnx with x < 0.11 studied by contactless electroreflectance by Zelazna, K., Polak, M. P., Scharoch, P., Serafinczuk, J., Gladysiewicz, M., Misiewicz, J., Dekoster, J., Kudrawiec, R.

“…Contactless electroreflectance is applied to study direct optical transitions from the heavy hole, light hole, and spin-orbit split-off band to the conduction…”
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Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys by Occena, J., Jen, T., Mitchell, J. W., Linhart, W. M., Pavelescu, E.-M., Kudrawiec, R., Wang, Y. Q., Goldman, R. S.

“…We have examined the alloy composition dependence of the energy bandgap and electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole…”
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Erratum: “Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures” [Appl. Phys. Lett. 107, 262107 (2016)] by Gladysiewicz, M., Janicki, L., Siekacz, M., Cywinski, G., Skierbiszewski, C., Kudrawiec, R.

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Supercontinuum source as a probing beam in photoreflectance and photoacoustic spectroscopy by Kopaczek, J., Zelewski, S.J., Kudrawiec, R.

“…•Applying supercontinuum light source as the probe beam in spectroscopic techniques.•Measurements of photoreflectance (PR) and photoacoustic (PA) spectra with…”
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Radiative and nonradiative recombination processes in GaNP(As) alloys by Wełna, M., Żelazna, K., Létoublon, A., Cornet, C., Janicki, Ł., Zieliński, M.S., Kudrawiec, R.

“…•Radiative and nonradiative processes of recombination in GaNP(As) layers were studied.•Thermally activated processes from photoluminescence thermal quenching…”
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Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP1−xBix dilute bismide with x ≤ 0.034 by Kopaczek, J, Kudrawiec, R, Polak, M P, Scharoch, P, Birkett, M, Veal, T D, Wang, K, Gu Y, Gong, Q

“…Contactless electroreflectance is applied to study the band gap (E0) and spin-orbit splitting (ΔSO) in InP1−xBix alloys with 0 < x ≤ 0.034. The E0 transition…”
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Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers by Zelazna, K., Kudrawiec, R., Luce, A., Yu, K.-M., Kuang (邝彦瑾), Y.J., Tu, C.W., Walukiewicz, W.

“…Photoreflectance spectroscopy is used to study optical properties of GaNPAs for the intermediate band (IB) solar cell absorbers. The IB is created in GaNPAs by…”
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