Search Results - "KRYZHANOVSKAYA, N. V"

Quantum-dot microlasers based on whispering gallery mode resonators by Zhukov, A. E., Kryzhanovskaya, N. V., Moiseev, E. I., Maximov, M. V.

“…The subject of this paper is microlasers with the emission spectra determined by the whispering gallery modes. Owing to the total internal reflection of light…”
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Temperature Dependencies of Radiative and Nonradiative Carrier Lifetimes in InGaAs Quantum Well-Dots by Nadtochiy, A. M., Melnichenko, I. A., Ivanov, K. A., Mintairov, S. A., Kalyuzhnyy, N. A., Maximov, M. V., Kryzhanovskaya, N. V., Zhukov, A. E.

“…Heterostructure with InGaAs/GaAs quantum well-dots was investigated in temperature range 10–300 K using photoluminescence spectroscopy in CW mode as well with…”
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Internal Loss in Diode Lasers with Quantum Well-Dots by Zhukov, A. E., Nadtochiy, A. M., Kryzhanovskaya, N. V., Shernyakov, Yu. M., Gordeev, N. Yu, Serin, A. A., Mintairov, S. A., Kalyuzhnyy, N. A., Payusov, A. S., Kornyshov, G. O., Maximov, M. V., Wang, Y.

“…The internal loss at the lasing threshold were studied experimentally and numerically in laser cavities comprising dense arrays of InGaAs/GaAs quantum dots…”
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Investigation of Photoluminescence in the InGaAs/GaAs System with 1100-nm Range Quantum Dots by Babichev, A. V., Komarov, S. D., Tkach, Yu. S., Nevedomskiy, V. N., Blokhin, S. A., Kryzhanovskaya, N. V., Gladyshev, A. G., Karachinsky, L. Ya, Novikov, I. I.

“…The results of studying the optical properties of InGaAs quantum dots are presented. Single-layer InGaAs quantum dots with a height of 5.3, 3.6 and 2.6…”
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Increase in the Efficiency of a Tandem Semiconductor Laser–Optical Amplifier Based on Self-Organizing Quantum Dots by Zhukov, A. E., Kryzhanovskaya, N. V., Moiseev, E. I., Dragunova, A. S., Nadtochiy, A. M., Maximov, M. V., Gordeev, N. Yu

“…Rate equations are used to analyze the characteristics of a tandem device consisting of a laser diode and a semiconductor optical amplifier made of a single…”
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Saturation Power of a Semiconductor Optical Amplifier Based on Self-Organized Quantum Dots by Zhukov, A. E., Kryzhanovskaya, N. V., Moiseev, E. I., Nadtochiy, A. M., Zubov, F. I., Fetisova, M. V., Maximov, M. V., Gordeev, N. Yu

“…Gain saturation in a semiconductor optical amplifier with an array of quantum dots is studied analytically and by numerical simulation on the basis of an…”
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Synthesis of Morphologically Developed InGaN Nanostructures on Silicon: Influence of the Substrate Temperature on the Morphological and Optical Properties by Reznik, R. R., Gridchin, V. O., Kotlyar, K. P., Kryzhanovskaya, N. V., Morozov, S. V., Cirlin, G. E.

“…The study concerns the issue of how the morphological characteristics and optical properties of morphologically branched InGaN nanostructures grown on the…”
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Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots by Moiseev, E. I., Maximov, M. V., Kryzhanovskaya, N. V., Simchuk, O. I., Kulagina, M. M., Kadinskaya, S. A., Guina, M., Zhukov, A. E.

“…The results of comparative analysis of the spectral and threshold characteristics of room-temperature injection microdisk lasers of the spectral range 1.2×× μm…”
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Record Low Threshold Current Density in Quantum Dot Microdisk Laser by Moiseev, E. I., Kryzhanovskaya, N. V., Zubov, F. I., Mikhailovskii, M. S., Abramov, A. N., Maximov, M. V., Kulagina, M. M., Guseva, Yu. A., Livshits, D. A., Zhukov, A. E.

“…We demonstrate a record low threshold current density of 250 A/cm 2 in a quantum dot microdisk laser with a 31-μm diameter operating at room temperature in…”
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Ultimate Lasing Temperature of Microdisk Lasers by Zhukov, A. E., Kryzhanovskaya, N. V., Moiseev, E. I., Kulagina, M. M., Mintairov, S. A., Kalyuzhnyy, N. A., Nadtochiy, A. M., Maximov, M. V.

“…A model is developed that makes it possible to analytically determine the threshold current of a microdisk laser with consideration for its self-heating as a…”
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InGaN/GaN QDs Nanorods: Processing and Properties by Kotlyar, K. P., Soshnikov, I. P., Morozov, I. A., Berezovskaya, T. N., Kryzhanovskaya, N. V., Kudryashov, D. A., Lysak, V. V.

“…InGaN/GaN nanorod structure is presented for the fabrication of light-emitting diodes by means of plasma-chemical etching. Processes of the etching of nanorods…”
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Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation by Zhukov, A. E., Moiseev, E. I., Kryzhanovskaya, N. V., Blokhin, S. A., Kulagina, M. M., Guseva, Yu. A., Mintairov, S. A., Kalyuzhnyy, N. A., Mozharov, A. M., Zubov, F. I., Maximov, M. V.

“…Microdisk lasers 10–30 μm in diameter operating at room temperature without thermal stabilization and with an active region based on nanostructures of hybrid…”
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Model for Speed Performance of Quantum-Dot Waveguide Photodiode by Zhukov, A. E., Kryzhanovskaya, N. V., Makhov, I. S., Moiseev, E. I., Nadtochiy, A. M., Fominykh, N. A., Mintairov, S. A., Kalyuzhyy, N. A., Zubov, F. I., Maximov, M. V.

“…A model is proposed that makes it possible to analytically analyze the speed performance of a waveguide p – i – n photodiode with a light-absorbing region…”
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Two-State Lasing in Injection Microdisks with InAs/InGaAs Quantum Dots by Makhov, I. S., Beckman, A. A., Kulagina, M. M., Guseva, Yu. A., Kryzhanovskaya, N. V., Nadtochiy, A. M., Maximov, M. V., Zhukov, A. E.

“…spectral dependencies of the electroluminescence intensity of a microdisk laser with a diameter of 31 μm with active region based on InAs/InGaAs quantum dots,…”
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Temperature-Dependent Characteristics of 1.3 μm InAs/InGaAs/GaAs Quantum Dot Ring Lasers by Gordeev, N. Yu, Moiseev, E. I., Fominykh, N. A., Kryzhanovskaya, N. V., Beckman, A. A., Kornyshov, G. O., Zubov, F. I., Shernyakov, Yu. M., Zhukov, A. E., Maximov, M. V.

“…The temperature characteristics of ring lasers with a diameter of 480 μm of an original design with an active region based on 10 layers of InAs/InGaAs/GaAs…”
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Effect of Nitrogen Plasma Treatment on the Structural and Optical Properties of InGaN by Gridchin, V. O., Soshnikov, I. P., Reznik, R. R., Komarov, S. D., Pirogov, E. V., Lendyashova, V. V., Kotlyar, K. P., Kryzhanovskaya, N. V., Cirlin, G. E.

“…The effect of cooling conditions in the plasma-assisted molecular-beam epitaxy growth on the structural and optical properties of InGaN nanostructures is…”
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On the Growth of InGaN Nanowires by Molecular-Beam Epitaxy: Influence of the III/V Flux Ratio on the Structural and Optical Properties by Gridchin, V. O., Komarov, S. D., Soshnikov, I. P., Shtrom, I. V., Reznik, R. R., Kryzhanovskaya, N. V., Cirlin, G. E.

“…In this study, for the first time, the influence of the III/V flux ratio on the structural and optical characteristics of InGaN nanowires grown by…”
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Investigation of High-Temperature Generation of Microdisc Lasers with Optically Coupled Waveguide by Fominykh, N. A., Kryzhanovskaya, N. V., Ivanov, K. A., Komarov, S. D., Moiseev, E. I., Nadtochiy, A. M., Guseva, Yu. A., Kulagina, M. M., Mintairov, S. A., Kalyuzhnyy, N. A., Khabibullin, R. A., Galiev, R. R., Pavlov, A. Yu, Tomosh, K. N., Makhov, I. S., Maximov, M. V., Zhukov, A. E.

“…The laser generation characteristics of microdisc lasers with optically coupled waveguide operating in continuous wave mode at elevated temperatures are…”
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Investigation of a p–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots by Kryzhanovskaya, N. V., Blokhin, S. A., Makhov, I. S., Moiseev, E. I., Nadtochiy, A. M., Fominykh, N. A., Mintairov, S. A., Kaluyzhnyy, N. A., Guseva, Yu. A., Kulagina, M. M., Zubov, F. I., Kolodeznyi, E. S., Maximov, M. V., Zhukov, A. E.

“…The static and dynamic characteristics of waveguide photodetectors with an absorbing region based on InGaAs/GaAs quantum well-dots were studied at room…”
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The Influence of the Waveguide Layer Composition on the Emission Parameters of 1550 nm InGaAs/InP Laser Heterostructures by Novikov, I. I., Nyapshaev, I. A., Gladyshev, A. G., Andryushkin, V. V., Babichev, A. V., Karachinsky, L. Yu, Shernyakov, Yu. M., Denisov, D. V., Kryzhanovskaya, N. V., Zhukov, A. E., Egorov, A. Yu

“…The influence of InGaAlAs waveguide composition on the photoluminescence and electroluminescence of 1550 nm spectral range heterostructures based on thin…”
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