Search Results - "KROTKUS, Arunas"
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Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys
Published in Nanoscale research letters (25-05-2020)“…The distribution of alloyed atoms in semiconductors often deviates from a random distribution which can have significant effects on the properties of the…”
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Pulsed Terahertz Emission from Solution-Processed Lead Iodide Perovskite Films
Published in ACS photonics (15-05-2019)“…We report pulsed terahertz (THz) emission from solution-processed metal halide perovskite films with electric field 1 order of magnitude lower than p-InAs, an…”
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Semiconductor Characterization by Terahertz Excitation Spectroscopy
Published in Materials (03-04-2023)“…Surfaces of semiconducting materials excited by femtosecond laser pulses emit electromagnetic waves in the terahertz (THz) frequency range, which by definition…”
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Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators
Published in Sensors (Basel, Switzerland) (02-11-2018)“…We demonstrate that the rectifying field effect transistor, biased to the subthreshold regime, in a large signal regime exhibits a super-linear response to the…”
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Quantum dot materials for terahertz generation applications
Published in Laser & photonics reviews (01-09-2016)“…Compact and tunable semiconductor terahertz sources providing direct electrical control, efficient operation at room temperatures and device integration…”
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Strong Terahertz Emission and Its Origin from Catalyst-Free InAs Nanowire Arrays
Published in Nano letters (12-03-2014)“…The unique features of nanowires (NW), such as the high aspect ratio and extensive surface area, are expected to play a key role in the development of very…”
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Terahertz Pulse Emission from Semiconductor Heterostructures Caused by Ballistic Photocurrents
Published in Sensors (Basel, Switzerland) (12-06-2021)“…Terahertz radiation pulses emitted after exciting semiconductor heterostructures by femtosecond optical pulses were used to determine the electron energy band…”
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GaAs1-xBix growth on Ge: anti-phase domains, ordering, and exciton localization
Published in Scientific reports (06-02-2020)“…The dilute bismide alloy GaAs 1- x Bi x has drawn significant attention from researchers interested in its fundamental properties and the potential for…”
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Spectral dependence of THz emission from InN and InGaN layers
Published in Scientific reports (08-05-2019)“…Spectral dependence of terahertz emission is a sensitive tool to analyze the structure of conduction band of semiconductors. In this work, we investigate the…”
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Performance assessment of a triple-junction solar cell with 1.0 eV GaAsBi absorber
Published in Discover nano (16-06-2023)“…Group III–V semiconductor multi-junction solar cells are widely used in concentrated-sun and space photovoltaic applications due to their unsurpassed power…”
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Reduction of optical transition energy in composite GaInAsBi quantum wells
Published in Infrared physics & technology (01-03-2022)“…•A simple method for a reduction of the optical transition energy in quantum wells is suggested.•Additional GaInAs layers, inserted between GaInAsBi and AlInAs…”
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Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells
Published in Nanoscale research letters (30-06-2017)“…Formation of bismuth nanocrystals in GaAsBi layers grown by molecular beam epitaxy at 330 °C substrate temperature and post-growth annealed at 750 °C is…”
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Spectral measurements of picosecond photoconductivity in terahertz detectors made from low temperature grown GaAs and GaInAs
Published in Physica status solidi. A, Applications and materials science (01-09-2015)“…We report on the performance of photoconductive terahertz detectors made from low temperature grown GaAs (LTG GaAs) and Ga0.7In0.3As (LTG GaInAs) in the…”
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14
A compact terahertz burst emission system driven with 1μm fiber laser
Published in Optics communications (15-04-2013)“…In this work we propose a compact, easily tunable terahertz burst generation system based on the mixing of two linearly chirped optical pulses in the Michelson…”
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Bismuth quantum dots and strong infrared photoluminescence in migration-enhanced epitaxy grown GaAsBi-based structures
Published in Optical and quantum electronics (01-04-2015)“…The strong photoluminescence (PL) signal at wavelengths ranging from 1,300 to 1,500 nm was observed in GaAsBi epitaxial layers grown by migration-enhanced…”
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Photoluminescence investigation of GaAs1−xBix/GaAs heterostructures
Published in Thin solid films (01-08-2012)“…In this work the impact of doped GaAs buffer and cap layers on the bismide photoluminescence (PL) spectra has been studied. For this study three types of…”
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Photoluminescence at up to 2.4μm wavelengths from GaInAsBi/AlInAs quantum wells
Published in Journal of crystal growth (01-04-2014)“…5nm, 10nm and 20nm-thick GaInAsBi quantum wells were grown on the InP:Fe(100) substrates by molecular beam epitaxy. The top and bottom barriers of quantum…”
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THz photomixer with milled nanoelectrodes on LT-GaAs
Published in Applied physics. A, Materials science & processing (01-11-2014)“…A terahertz (THz) photomixer: (i) a meander type antenna with integrated nanoelectrodes on (ii) a low temperature grown GaAs has been fabricated and…”
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Time-resolved reflectivity characterization of polycrystalline low-temperature-grown GaAs
Published in Applied physics letters (26-04-1999)“…Using femtosecond time resolved reflectivity, we have characterized the dynamics of photoinduced generated carriers in a polycrystalline low-temperature-grown…”
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Conducting Helical Structures from Celery Decorated with a Metallic Conjugated Polymer Give Resonances in the Terahertz Range
Published in Advanced functional materials (13-06-2018)“…A method to decorate cellulose‐based helices retrieved from the plant celery with a conductive polymer is proposed. Using a layer‐by‐layer method, the…”
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