Search Results - "KROTKUS, Arunas"

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  1. 1

    Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys by Paulauskas, Tadas, Pačebutas, Vaidas, Butkutė, Renata, Čechavičius, Bronislovas, Naujokaitis, Arnas, Kamarauskas, Mindaugas, Skapas, Martynas, Devenson, Jan, Čaplovičová, Mária, Vretenár, Viliam, Li, Xiaoyan, Kociak, Mathieu, Krotkus, Arūnas

    Published in Nanoscale research letters (25-05-2020)
    “…The distribution of alloyed atoms in semiconductors often deviates from a random distribution which can have significant effects on the properties of the…”
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  2. 2

    Pulsed Terahertz Emission from Solution-Processed Lead Iodide Perovskite Films by Ponseca, Carlito S, Arlauskas, Andrius, Yu, Hongling, Wang, Feng, Nevinskas, Ignas, Du̅da, Eimantas, Vaičaitis, Virgilijus, Eriksson, Jens, Bergqvist, Jonas, Liu, Xiao-Ke, Kemerink, Martijn, Krotkus, Aru̅nas, Inganas, Olle, Gao, Feng

    Published in ACS photonics (15-05-2019)
    “…We report pulsed terahertz (THz) emission from solution-processed metal halide perovskite films with electric field 1 order of magnitude lower than p-InAs, an…”
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  3. 3

    Semiconductor Characterization by Terahertz Excitation Spectroscopy by Krotkus, Arūnas, Nevinskas, Ignas, Norkus, Ričardas

    Published in Materials (03-04-2023)
    “…Surfaces of semiconducting materials excited by femtosecond laser pulses emit electromagnetic waves in the terahertz (THz) frequency range, which by definition…”
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  4. 4

    Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators by Ikamas, Kęstutis, Nevinskas, Ignas, Krotkus, Arūnas, Lisauskas, Alvydas

    Published in Sensors (Basel, Switzerland) (02-11-2018)
    “…We demonstrate that the rectifying field effect transistor, biased to the subthreshold regime, in a large signal regime exhibits a super-linear response to the…”
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  5. 5

    Quantum dot materials for terahertz generation applications by Leyman, Ross R., Gorodetsky, Andrei, Bazieva, Natalia, Molis, Gediminas, Krotkus, Arūnas, Clarke, Edmund, Rafailov, Edik U.

    Published in Laser & photonics reviews (01-09-2016)
    “…Compact and tunable semiconductor terahertz sources providing direct electrical control, efficient operation at room temperatures and device integration…”
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  6. 6

    Strong Terahertz Emission and Its Origin from Catalyst-Free InAs Nanowire Arrays by Arlauskas, Andrius, Treu, Julian, Saller, Kai, Beleckaitė, Ieva, Koblmüller, Gregor, Krotkus, Aru̅nas

    Published in Nano letters (12-03-2014)
    “…The unique features of nanowires (NW), such as the high aspect ratio and extensive surface area, are expected to play a key role in the development of very…”
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  7. 7

    Terahertz Pulse Emission from Semiconductor Heterostructures Caused by Ballistic Photocurrents by Malevich, Vitaly Leonidovich, Ziaziulia, Pavel Aliaksandravich, Norkus, Ričardas, Pačebutas, Vaidas, Nevinskas, Ignas, Krotkus, Arūnas

    Published in Sensors (Basel, Switzerland) (12-06-2021)
    “…Terahertz radiation pulses emitted after exciting semiconductor heterostructures by femtosecond optical pulses were used to determine the electron energy band…”
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  8. 8
  9. 9

    Spectral dependence of THz emission from InN and InGaN layers by Norkus, Ričardas, Aleksiejūnas, Ramūnas, Kadys, Arūnas, Kolenda, Marek, Tamulaitis, Gintautas, Krotkus, Arūnas

    Published in Scientific reports (08-05-2019)
    “…Spectral dependence of terahertz emission is a sensitive tool to analyze the structure of conduction band of semiconductors. In this work, we investigate the…”
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  10. 10

    Performance assessment of a triple-junction solar cell with 1.0 eV GaAsBi absorber by Paulauskas, Tadas, Pačebutas, Vaidas, Strazdienė, Viktorija, Geižutis, Andrejus, Devenson, Jan, Kamarauskas, Mindaugas, Skapas, Martynas, Kondrotas, Rokas, Drazdys, Mantas, Rudzikas, Matas, Šebeka, Benjaminas, Vretenár, Viliam, Krotkus, Arūnas

    Published in Discover nano (16-06-2023)
    “…Group III–V semiconductor multi-junction solar cells are widely used in concentrated-sun and space photovoltaic applications due to their unsurpassed power…”
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  11. 11

    Reduction of optical transition energy in composite GaInAsBi quantum wells by Pačebutas, Vaidas, Karpus, Vytautas, Geižutis, Andrejus, Kamarauskas, Mindaugas, Selskis, Algirdas, Krotkus, Arūnas

    Published in Infrared physics & technology (01-03-2022)
    “…•A simple method for a reduction of the optical transition energy in quantum wells is suggested.•Additional GaInAs layers, inserted between GaInAsBi and AlInAs…”
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  12. 12

    Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells by Butkutė, Renata, Niaura, Gediminas, Pozingytė, Evelina, Čechavičius, Bronislovas, Selskis, Algirdas, Skapas, Martynas, Karpus, Vytautas, Krotkus, Arūnas

    Published in Nanoscale research letters (30-06-2017)
    “…Formation of bismuth nanocrystals in GaAsBi layers grown by molecular beam epitaxy at 330 °C substrate temperature and post-growth annealed at 750 °C is…”
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  13. 13

    Spectral measurements of picosecond photoconductivity in terahertz detectors made from low temperature grown GaAs and GaInAs by Adamonis, Juozas, Arlauskas, Andrius, Krotkus, Arūnas

    “…We report on the performance of photoconductive terahertz detectors made from low temperature grown GaAs (LTG GaAs) and Ga0.7In0.3As (LTG GaInAs) in the…”
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  14. 14

    A compact terahertz burst emission system driven with 1μm fiber laser by Adamonis, Juozas, Rusteika, Nerijus, Danilevičius, Rokas, Krotkus, Arūnas

    Published in Optics communications (15-04-2013)
    “…In this work we propose a compact, easily tunable terahertz burst generation system based on the mixing of two linearly chirped optical pulses in the Michelson…”
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  15. 15

    Bismuth quantum dots and strong infrared photoluminescence in migration-enhanced epitaxy grown GaAsBi-based structures by Butkutė, Renata, Stašys, Karolis, Pačebutas, Vaidas, Čechavičius, Bronislovas, Kondrotas, Rokas, Geižutis, Andrejus, Krotkus, Arūnas

    Published in Optical and quantum electronics (01-04-2015)
    “…The strong photoluminescence (PL) signal at wavelengths ranging from 1,300 to 1,500 nm was observed in GaAsBi epitaxial layers grown by migration-enhanced…”
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  16. 16

    Photoluminescence investigation of GaAs1−xBix/GaAs heterostructures by Pačebutas, Vaidas, Butkutė, Renata, Čechavičius, Bronius, Kavaliauskas, Julius, Krotkus, Arūnas

    Published in Thin solid films (01-08-2012)
    “…In this work the impact of doped GaAs buffer and cap layers on the bismide photoluminescence (PL) spectra has been studied. For this study three types of…”
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  17. 17

    Photoluminescence at up to 2.4μm wavelengths from GaInAsBi/AlInAs quantum wells by Butkutė, Renata, Pačebutas, Vaidas, Čechavičius, Bronislovas, Nedzinskas, Ramūnas, Selskis, Algirdas, Arlauskas, Andrius, Krotkus, Arūnas

    Published in Journal of crystal growth (01-04-2014)
    “…5nm, 10nm and 20nm-thick GaInAsBi quantum wells were grown on the InP:Fe(100) substrates by molecular beam epitaxy. The top and bottom barriers of quantum…”
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  18. 18

    THz photomixer with milled nanoelectrodes on LT-GaAs by Seniutinas, Gediminas, Gervinskas, Gediminas, Constable, Evan, Krotkus, Arūnas, Molis, Gediminas, Valušis, Gintaras, Lewis, Roger A., Juodkazis, Saulius

    “…A terahertz (THz) photomixer: (i) a meander type antenna with integrated nanoelectrodes on (ii) a low temperature grown GaAs has been fabricated and…”
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  19. 19

    Time-resolved reflectivity characterization of polycrystalline low-temperature-grown GaAs by Roux, Jean-François, Coutaz, Jean-Louis, Krotkus, Arunas

    Published in Applied physics letters (26-04-1999)
    “…Using femtosecond time resolved reflectivity, we have characterized the dynamics of photoinduced generated carriers in a polycrystalline low-temperature-grown…”
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  20. 20

    Conducting Helical Structures from Celery Decorated with a Metallic Conjugated Polymer Give Resonances in the Terahertz Range by Elfwing, Anders, Ponseca, Carlito S., Ouyang, Liangqi, Urbanowicz, Andrzej, Krotkus, Aru–nas, Tu, Deyu, Forchheimer, Robert, Inganäs, Olle

    Published in Advanced functional materials (13-06-2018)
    “…A method to decorate cellulose‐based helices retrieved from the plant celery with a conductive polymer is proposed. Using a layer‐by‐layer method, the…”
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