Search Results - "KRISHNAN, Siddarth"

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    Cytomegalovirus viral load in cord blood and impact of congenital infection on markers of hematopoietic progenitor cell potency by Albano, M. Susana, Ciubotariu, Rodica, Dobrila, Ludy, Tarnawski, Michal, DeLeon, Margely, Watanabe, Chiseko, Krishnan, Siddarth, Scaradavou, Andromachi, Rubinstein, Pablo

    Published in Transfusion (Philadelphia, Pa.) (01-11-2017)
    “…BACKGROUND The low incidence of cytomegalovirus (CMV) infection in neonates decreases the risk of viral transmission with cord blood transplantation. Cord…”
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    Journal Article
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    Voltage Ramp Stress for Bias Temperature Instability Testing of Metal-Gate/High- k Stacks by Kerber, A., Krishnan, S.A., Cartier, E.A.

    Published in IEEE electron device letters (01-12-2009)
    “…A novel voltage-ramp-stress (VRS) methodology is introduced for bias temperature instability testing of metal-gate/high- k (MG/HK) CMOS devices. Results from…”
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    Journal Article
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    Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs by Kim, Jiseok, Krishnan, Siddarth A., Narayanan, Sudarshan, Chudzik, Michael P., Fischetti, Massimo V.

    Published in Microelectronics and reliability (01-12-2012)
    “…► Fowler–Nordheim tunneling at high gate voltages. ► Effective barrier lowering with increasing temperature. ► Poole–Frenkel emission around operating voltages…”
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    Journal Article
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    Non-Contact, Sub-Surface Detection of Alloy Segregation in Back-End of Line Copper Dual-Damascene Structures by Nag, Joyeeta, Ray, Shishir, Kohli, Kriteshwar K., Simon, Andrew H., Cohen, Brian A., Tijiwa-Birk, Felipe, Parks, Christopher J., Krishnan, Siddarth A.

    “…Alloy seedlayers for copper back-end of line interconnects have become common at technology groundrules of 45 nm and below, due to reliability requirements…”
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    Journal Article
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    Electric-field-driven dielectric breakdown of metal-insulator-metal hafnium silicate by Lee, Byoung Hun, Kang, Chang Yong, Kirsch, Paul, Heh, Dawei, Young, Chadwin D., Park, Hongbae, Yang, Jiwoon, Bersuker, Gennadi, Krishnan, Siddarth, Choi, Rino, Lee, Hi-Deok

    Published in Applied physics letters (10-12-2007)
    “…The breakdown characteristics of the crystalline and amorphous hafnium (Hf) silicates have been studied using metal-insulator-metal capacitors. It is found…”
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    Journal Article
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    Mechanistic understanding of Breakdown and Bias Temperature Instability in High-K Metal devices using inline Fast Ramped Bias Test by Krishnan, Siddarth A, Cartier, Eduard, Stathis, James, Chudzik, Michael, Kerber, Andreas

    “…Reliability Qualification has historically been a time consuming affair, taking up several months in each technology node's development cycle. The recent…”
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    Conference Proceeding
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    Hafnium Titanate bilayer structure multimetal dielectric nMOSCAPs by Se Jong Rhee, Feng Zhu, Hyoung-Sub Kim, Chang Hwan Choi, Chang Yong Kang, Manhong Zhang, Tackhwi Lee, Ok, I., Krishnan, S.A., Lee, J.C.

    Published in IEEE electron device letters (01-04-2006)
    “…A novel approach of fabricating laminated TiO/sub 2//HfO/sub 2/ bilayer multimetal oxide dielectric has been developed for high-performance CMOS applications…”
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    Journal Article
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    Bulk‐Switching Memristor‐Based Compute‐In‐Memory Module for Deep Neural Network Training by Wu, Yuting, Wang, Qiwen, Wang, Ziyu, Wang, Xinxin, Ayyagari, Buvna, Krishnan, Siddarth, Chudzik, Michael, Lu, Wei D.

    Published in Advanced materials (Weinheim) (01-11-2023)
    “…The constant drive to achieve higher performance in deep neural networks (DNNs) has led to the proliferation of very large models. Model training, however,…”
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    Journal Article
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    Positive bias temperature instability effects of Hf-based nMOSFETs with various nitrogen and silicon profiles by Changhwan Choi, Chang-Seok Kang, Chang Yong Kang, Se Jong Rhee, Akbar, M.S., Krishnan, S.A., Manhong Zhang, Lee, J.C.

    Published in IEEE electron device letters (01-01-2005)
    “…Positive bias temperature instability (PBTI) effects of HfO/sub 2/-based nMOSFETs with various nitrogen profiles in HfO/sub 2/ were investigated. The nitrogen…”
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    Journal Article
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    Investigation of transient relaxation under static and dynamic stress in Hf-based gate oxides by Akbar, M.S., Changhwan Choi, Se Jong Rhee, Krishnan, S.A., Chang Yong Kang, Man Hong Zhang, Tackhwi Lee, Ok, I., Feng Zhu, Hyoung-Sub Kim, Lee, J.C.

    Published in IEEE transactions on electron devices (01-05-2006)
    “…Transient relaxation, which has been addressed as an undesirable issue in high-k alternate gate dielectrics, has been studied systematically. In Hf-based…”
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    Journal Article
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    Modeling of SiC transistor with counter-doped channel by Vyas, Pratik B., Pal, Ashish, Weeks, Stephen, Holt, Joshua, Srivastava, Aseem K., Megalini, Ludovico, Krishnan, Siddarth, Chudzik, Michael, Bazizi, El Mehdi, Ayyagari-Sangamalli, Buvna

    Published in Solid-state electronics (01-02-2023)
    “…In this paper, we present a modeling framework to simulate the electrical characteristics of SiC MOSFET. Our model also describes the mobility improvement with…”
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    Journal Article
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    Systematic analysis of silicon oxynitride interfacial layer and its effects on electrical characteristics of high-k HfO2 transistor by Rhee, Se Jong, Zhu, Feng, Kim, Hyoung-Sub, Kang, Chang Yong, Choi, Chang Hwan, Zhang, Manhong, Lee, Tackhwi, Ok, Injo, Krishnan, Siddarth A., Lee, Jack C.

    Published in Applied physics letters (10-04-2006)
    “…High-k hafnium oxide dielectric metal-oxide-semiconductor field-effect transistors with several physical thicknesses of silicon oxynitride interfacial layers…”
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    Journal Article
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    Cytomegalovirus (CMV) Viral Load in Cord Blood (CB) Donors and Impact of Congenital Viremia on Markers of Hematopoietic Progenitor Cell (HPC) Potency by Albano, Maria S, Ciubotariu, Rodica, Watanabe, Chiseko, Krishnan, Siddarth, Tarnawski, Michal, Dobrila, Ludy, Scaradavou, Andromachi, Rubinstein, Pablo

    Published in Blood (02-12-2016)
    “…CMV infection is an established risk factor in patients undergoing hematopoietic stem cell transplantation (HSCT). Hence, the status of the donor is carefully…”
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    Journal Article