Search Results - "KRISHNAN, Siddarth"
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Cytomegalovirus viral load in cord blood and impact of congenital infection on markers of hematopoietic progenitor cell potency
Published in Transfusion (Philadelphia, Pa.) (01-11-2017)“…BACKGROUND The low incidence of cytomegalovirus (CMV) infection in neonates decreases the risk of viral transmission with cord blood transplantation. Cord…”
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Voltage Ramp Stress for Bias Temperature Instability Testing of Metal-Gate/High- k Stacks
Published in IEEE electron device letters (01-12-2009)“…A novel voltage-ramp-stress (VRS) methodology is introduced for bias temperature instability testing of metal-gate/high- k (MG/HK) CMOS devices. Results from…”
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Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs
Published in Microelectronics and reliability (01-12-2012)“…► Fowler–Nordheim tunneling at high gate voltages. ► Effective barrier lowering with increasing temperature. ► Poole–Frenkel emission around operating voltages…”
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Non-Contact, Sub-Surface Detection of Alloy Segregation in Back-End of Line Copper Dual-Damascene Structures
Published in IEEE transactions on semiconductor manufacturing (01-11-2015)“…Alloy seedlayers for copper back-end of line interconnects have become common at technology groundrules of 45 nm and below, due to reliability requirements…”
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Metal Gate-HfO2 MOS structures on GaAs substrate with and without Si interlayer
Published in IEEE electron device letters (01-03-2006)Get full text
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Electric-field-driven dielectric breakdown of metal-insulator-metal hafnium silicate
Published in Applied physics letters (10-12-2007)“…The breakdown characteristics of the crystalline and amorphous hafnium (Hf) silicates have been studied using metal-insulator-metal capacitors. It is found…”
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Mechanistic understanding of Breakdown and Bias Temperature Instability in High-K Metal devices using inline Fast Ramped Bias Test
Published in 2011 International Reliability Physics Symposium (01-04-2011)“…Reliability Qualification has historically been a time consuming affair, taking up several months in each technology node's development cycle. The recent…”
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Conference Proceeding -
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Aggressively scaled ultrathin undoped HfO2 gate dielectric (EOT < 0.7 nm) with TaN gate electrode using engineered interface layer
Published in IEEE electron device letters (01-07-2005)Get full text
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Hafnium Titanate bilayer structure multimetal dielectric nMOSCAPs
Published in IEEE electron device letters (01-04-2006)“…A novel approach of fabricating laminated TiO/sub 2//HfO/sub 2/ bilayer multimetal oxide dielectric has been developed for high-performance CMOS applications…”
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Bulk‐Switching Memristor‐Based Compute‐In‐Memory Module for Deep Neural Network Training
Published in Advanced materials (Weinheim) (01-11-2023)“…The constant drive to achieve higher performance in deep neural networks (DNNs) has led to the proliferation of very large models. Model training, however,…”
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Positive bias temperature instability effects of Hf-based nMOSFETs with various nitrogen and silicon profiles
Published in IEEE electron device letters (01-01-2005)“…Positive bias temperature instability (PBTI) effects of HfO/sub 2/-based nMOSFETs with various nitrogen profiles in HfO/sub 2/ were investigated. The nitrogen…”
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Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y2O3/HfO2 gate dielectric
Published in IEEE electron device letters (01-12-2005)Get full text
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Investigation of transient relaxation under static and dynamic stress in Hf-based gate oxides
Published in IEEE transactions on electron devices (01-05-2006)“…Transient relaxation, which has been addressed as an undesirable issue in high-k alternate gate dielectrics, has been studied systematically. In Hf-based…”
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Modeling of SiC transistor with counter-doped channel
Published in Solid-state electronics (01-02-2023)“…In this paper, we present a modeling framework to simulate the electrical characteristics of SiC MOSFET. Our model also describes the mobility improvement with…”
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Novel Materials and Processes in Replacement Metal Gate for Advanced CMOS Technology
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01-12-2018)“…This paper addresses novel approaches at material and integration fronts for gate applications. Material wise, new n work function metal (WFM) material is…”
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Conference Proceeding -
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Cord Blood Units (CBU) Selected for Transplantation from a Single CB Bank over 10 Years: High Correlation of Potency/Quality Among Pre-Cryopreservation and Post-Thaw Segment Measurements and Time to Engraftment
Published in Blood (29-11-2018)“…Background: CBU selection for transplant is based on HLA match and potency/quality determinations associated with the speed of hematopoietic engraftment. Total…”
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An 8-bit 20.7 TOPS/W Multi-Level Cell ReRAM-based Compute Engine
Published in 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (12-06-2022)“…Analog compute in memory with Multi-Level Cell (MLC) ReRAM promises highly dense and efficient compute support for machine learning and scientific computing…”
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Conference Proceeding -
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Systematic analysis of silicon oxynitride interfacial layer and its effects on electrical characteristics of high-k HfO2 transistor
Published in Applied physics letters (10-04-2006)“…High-k hafnium oxide dielectric metal-oxide-semiconductor field-effect transistors with several physical thicknesses of silicon oxynitride interfacial layers…”
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Cytomegalovirus (CMV) Viral Load in Cord Blood (CB) Donors and Impact of Congenital Viremia on Markers of Hematopoietic Progenitor Cell (HPC) Potency
Published in Blood (02-12-2016)“…CMV infection is an established risk factor in patients undergoing hematopoietic stem cell transplantation (HSCT). Hence, the status of the donor is carefully…”
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