Search Results - "KOTHARI, SHRADDHA"

Germanium oxynitride gate interlayer dielectric formed on Ge(100) using decoupled plasma nitridation by Bhatt, Piyush, Chaudhuri, Krishnakali, Kothari, Shraddha, Nainani, Aneesh, Lodha, Saurabh

“…Germanium Oxynitride (GeON) gate interlayer (IL) dielectric formed using decoupled plasma nitridation (DPN) technique is compared with GeO2 and thermally…”
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Plasma-assisted low energy N2 implant for Vfb tuning of Ge gate stacks by Kothari, Shraddha, Joishi, Chandan, Nejad, Hasan, Variam, Naushad, Lodha, Saurabh

“…This work reports Vfb tuning of TiN/HfO2 gate stacks on Ge using low energy plasma-assisted doping with N2 without significant impact on gate capacitance and…”
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Plasma-assisted As implants for effective work function modulation of TiN/HfO2 gate stacks on germanium by Kothari, Shraddha, Vaidya, Dhirendra, Nejad, Hasan, Variam, Naushad, Ganguly, Swaroop, Lodha, Saurabh

“…The plasma assisted As doping (PLAD) technique is used to demonstrate multiple flatband voltages (multi-Vfb) on TiN/HfO2 Ge gate stacks for n-FinFET…”
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Impact of Macroprudential Measures on Non-Banking Financial Intermediaries: Evidence of Regulatory Arbitrage in a Crosscountry Framework by Manna, Indrani, Kothari, Shraddha

“…Does tightening of regulation in the banking system reallocate intermediation from banks to unregulated or less regulated entities like non-banks? Do economic…”
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Impact of Macroprudential Measures on Non-Banking Financial Intermediaries: Evidence of Regulatory Arbitrage in a Cross-Country Framework by MANNA, INDRANI, KOTHARI, SHRADDHA

“…Does tightening of regulation in the banking system reallocate intermediation from banks to unregulated or less regulated entities like non-banks? Do economic…”
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Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiOₓ-Based Memristors-Part I: Behavioral Model by Vaidya, Dhirendra, Kothari, Shraddha, Abbey, Thomas, Khiat, Ali, Stathopoulos, Spyros, Michalas, Loukas, Serb, Alexantrou, Prodromakis, Themis

“…Memristor is a promising device as a fundamental building block for future unconventional system architectures such as neuromorphic computing, reconfigurable…”
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Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiOₓ Memristors-Part II: Physics-Based Model by Vaidya, Dhirendra, Kothari, Shraddha, Abbey, Thomas, Stathopoulos, Spyros, Michalas, Loukas, Serb, Alexantrou, Prodromakis, Themis

“…In the second part of this series, we propose a physics-based model for describing the temperature dependence of TiO x -based memristors, both switching and…”
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Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO ₓ Memristors—Part II: Physics-Based Model by Vaidya, Dhirendra, Kothari, Shraddha, Abbey, Thomas, Stathopoulos, Spyros, Michalas, Loukas, Serb, Alexantrou, Prodromakis, Themis

“…In the second part of this series, we propose a physics-based model for describing the temperature dependence of TiO x -based memristors, both switching and…”
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Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO ₓ -Based Memristors—Part I: Behavioral Model by Vaidya, Dhirendra, Kothari, Shraddha, Abbey, Thomas, Khiat, Ali, Stathopoulos, Spyros, Michalas, Loukas, Serb, Alexantrou, Prodromakis, Themis

“…Memristor is a promising device as a fundamental building block for future unconventional system architectures such as neuromorphic computing, reconfigurable…”
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Understanding PBTI in Replacement Metal Gate Ge n-Channel FETs With Ultrathin Al2O3 and GeOx ILs Using Ultrafast Charge Trap-Detrap Techniques by Joishi, Chandan, Ghosh, Sayantan, Kothari, Shraddha, Parihar, Narendra, Mukhopadhyay, Subhadeep, Mahapatra, Souvik, Lodha, Saurabh

“…We report positive bias temperature instability data in replacement metal gate Ge n-channel metal-oxide-semiconductor field-effect transistors with an in-situ…”
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Understanding PBTI in Replacement Metal Gate Ge n-Channel FETs With Ultrathin Al 2 O 3 and GeO x ILs Using Ultrafast Charge Trap–Detrap Techniques by Joishi, Chandan, Ghosh, Sayantan, Kothari, Shraddha, Parihar, Narendra, Mukhopadhyay, Subhadeep, Mahapatra, Souvik, Lodha, Saurabh

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Understanding PBTI in Replacement Metal Gate Ge n-Channel FETs With Ultrathin Al2O3 and GeO x ILs Using Ultrafast Charge Tr–Detrap Techniques by Joishi, Chandan, Ghosh, Sayantan, Kothari, Shraddha, Parihar, Narendra, Mukhopadhyay, Subhadeep, Mahapatra, Souvik, Lodha, Saurabh

“…We report positive bias temperature instability data in replacement metal gate Ge n-channel metal–oxide–semiconductor field-effect transistors with an in-situ…”
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Ultrafast PBTI characterization on Si-free gate last Ge nFETs with stable and ultrathin Al2O3 IL by Joishi, Chandan, Kothari, Shraddha, Ghosh, Sayantan, Mukhopadhyay, Subhadeep, Mahapatra, Souvik, Lodha, Saurabh

“…This work for the first time reports positive bias temperature instability (PBTI) on Ge n-channel metal oxide semiconductor field effect transistors (nFETs)…”
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Metal gate VT modulation using PLAD N2 implants for Ge p-FinFET applications by Kothari, Shraddha, Joishi, Chandan, Vaidya, Dhirendra, Nejad, Hasan, Colombeau, Benjamin, Ganguly, Swaroop, Lodha, Saurabh

“…This work reports multi-V T Ge gate stacks using low energy plasma-assisted doping (PLAD) with N 2 for Ge p-FinFET applications. Varying implant dose and…”
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Enhanced Ge n-channel gate stack performance using HfAlO high-k dielectric by Kothari, Shraddha, Joishi, Chandan, Biswas, Dipankar, Vaidya, Dhirendra, Ganguly, Swaroop, Lodha, Saurabh

“…Summary form only given. This work reports improved Ge n-channel gate stack performance using HfAlO high-k dielectric versus HfO 2 . ALD HfAlO high-k results…”
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Interlayer Engineering in GeSn Gate Stacks for Advanced CMOS by Kothari, Shraddha, Rathore, Jaswant S., Khiangte, Krista R., Mahapatra, Suddhasatta, Lodha, Saurabh

“…This work reports a comparative study of different interlayers (ILs) in low thermal budget gate stacks on GeSn substrates with 8.5% and 11% of Sn…”
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