Search Results - "KOTECKI, D. E"

Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz by Baniecki, J. D., Laibowitz, R. B., Shaw, T. M., Duncombe, P. R., Neumayer, D. A., Kotecki, D. E., Shen, H., Ma, Q. Y.

“…The dielectric relaxation of Ba0.7Sr0.3TiO3 thin films was investigated up to K band (20 GHz) using time domain and frequency domain measurements. Our results…”
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Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0.7Sr0.3TiO3 thin film capacitors by BANIECKI, J. D, LAIBOWITZ, R. B, SHAW, T. M, SAENGER, K. L, DUNCOMBE, P. R, CABRAL, C, KOTECKI, D. E, SHEN, H, LIAN, J, MA, Q. Y

“…The leakage and dielectric relaxation currents of MOCVD Ba0.7Sr0.3TiO3 thin films with Pt electrodes after post top electrode anneals in O2 and forming gas…”
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Interface defects of ultrathin rapid-thermal oxide on silicon by STATHIS, J. H, BUCHANAN, D. A, QUINLAN, D. L, PARSONS, A. H, KOTECKI, D. E

“…We have used capacitance-voltage and electron paramagnetic resonance to measure interface defects in ultrathin (30 Å) SiO2 prepared by rapid-thermal oxidation…”
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36-GHz, 16×6-bit ROM in InP DHBT technology suitable for DDS application by MANANDHAR, Sanjeev, TURNER, Steven Eugene, KOTECKI, David E

“…A 16times6-bit read-only memory (ROM), employing an architecture suitable for use as a phase to amplitude converter for direct digital synthesizers (DDS), has…”
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Structure, properties, and thermal stability of in situ phosphorus-doped hydrogenated microcrystalline silicon prepared by plasma-enhanced chemical vapor deposition by JENG, S. J, KOTECKI, D. E, KANICKI, J, PARKS, C. C, TIEN, J

“…The correlations between structural, chemical, electrical, optical properties of in situ phosphorus-doped hydrogenated microcrystalline silicon prepared by…”
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Reaction study of cobalt and silicon nitride by Nguyen, Tue, Ho, Herbert L., Kotecki, David E., Nguyen, Tai D.

“…The interaction of cobalt (Co) and low-pressure chemical-vapor-deposited silicon nitride (LPCVD Si3N4) during anneals from 200 °C−1000 °C in vacuum, Ar, and…”
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4-bit adder-accumulator at 41-GHz clock frequency in InP DHBT technology by Turner, S.E., Elder, R.B., Jansen, D.S., Kotecki, D.E.

“…A 41-GHz 4-b adder-accumulator test circuit implemented in InP double heterojunction bipolar transistor (DHBT) technology using 624 transistors is reported…”
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Optimization of Ta–Si–N thin films for use as oxidation-resistant diffusion barriers by Cabral, C., Saenger, K. L., Kotecki, D. E., Harper, J. M. E.

“…We have demonstrated that the optimum Ta–Si–N compositions for use as oxygen diffusion barriers in stacked-capacitor dynamic random-access memory structures…”
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Simulation of the variability in microelectronic capacitors having polycrystalline dielectrics by Cousins, J.L., Kotecki, D.E.

“…The scaling down of on-chip microelectronic capacitors presents a considerable challenge for future microelectronic devices. High-permittivity polycrystalline…”
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36-GHz, 16x 6-Bit ROM in InP DHBT Technology Suitable for DDS Application by Manandhar, S, Turner, S E, Kotecki, D E

“…A 16times6-bit read-only memory (ROM), employing an architecture suitable for use as a phase to amplitude converter for direct digital synthesizers (DDS), has…”
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A 126.9-132.4GHz wide-locking low-power frequency-quadrupled phase-locked loop in 130nm SiGe BiCMOS by Yang Lin, Kotecki, D. E.

“…This paper explores a common-emitter buffer-based frequency multiplier which can be applied to the phase-locked loop (PLL) to boost the overall output…”
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A 290GHz frequency quadrupled SiGe voltage-controlled oscillator by Yang Lin, Kotecki, D. E.

“…This paper explores a common-emitter buffer-based frequency multiplier which can be applied to the voltage-controlled oscillator (VCO) to boost the output…”
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Numerical simulation of etching and deposition processes by HAMAGUCHI, S, MAYO, A. A, ROSSNAGEL, S. M, KOTECKI, D. E, MILKOVE, K. R, WANG, C, FARRELL, C. E

“…Accurate numerical simulation of microscopic surface topography evolution can facilitate the development of various etching and deposition processes for…”
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Direct Digital Synthesizer With Sine-Weighted DAC at 32-GHz Clock Frequency in InP DHBT Technology by Turner, S.E., Kotecki, D.E.

“…A direct digital synthesizer (DDS) implemented in InP double heterojunction bipolar transistor (DHBT) technology is reported. This DDS uses a sine-weighted…”
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Nanopore with transverse nanoelectrodes for electrical characterization and sequencing of DNA by Gierhart, Brian C., Howitt, David G., Chen, Shiahn J., Zhu, Zhineng, Kotecki, David E., Smith, Rosemary L., Collins, Scott D.

“…A DNA sequencing device which integrates transverse conducting electrodes for the measurement of electrode currents during DNA translocation through a nanopore…”
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Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0·7Sr0·3TiO3 thin film capacitors by Baniecki, J.D., Laibowitz, R.B., Shaw, T.M., Saenger, K.L., Duncombe, P.R., Cabral, C., Kotecki, D.E., Shen, H., Lian, J., Ma, Q.Y.

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Direct digital synthesizer with ROM-Less architecture at 13-GHz clock frequency in InP DHBT technology by Turner, S.E., Kotecki, D.E.

“…A direct digital synthesizer (DDS) implemented in InP double heterojunction bipolar transistor (DHBT) technology is reported. The DDS has a ROM-less…”
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A review of high dielectric materials for DRAM capacitors by Kotecki, David E.

“…There has been growing interest in the use of materials with the perovskite structure as a dielectric for capacitors in dynamic random access memory chips. The…”
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A 0.8-13.4GHz combined voltage-controlled oscillator with an exclusive-OR in 130nm SiGe BiCMOS by Yang Lin, Kotecki, D E

“…Wide-tuning-range voltage-controlled oscillator (VCO) design is motivated by applications in broadband communications, radars, phase-locked loops and clock…”
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Temperature distribution in an ideal azeimuthally symmetric chemical-vapor-deposition reactor by KOTECKI, D. E, CONTI, R. A

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