Search Results - "KOSCHNICK, F. K"

Electrical characterization of two deep electron traps introduced in epitaxially grown n-GaN during He-ion irradiation by Auret, F. D., Goodman, S. A., Koschnick, F. K., Spaeth, J-M., Beaumont, B., Gibart, P.

“…Epitaxial n-GaN was irradiated with 5.4-MeV He ions. Capacitance–voltage (C–V) measurements showed that 5.4-MeV He ions remove free carriers at a rate of…”
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Proton bombardment-induced electron traps in epitaxially grown n-GaN by Auret, F. D., Goodman, S. A., Koschnick, F. K., Spaeth, J.-M., Beaumont, B., Gibart, P.

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Radiation induced defects in MOVPE grown n-GaN by GOODMAN, S. A, AURET, F. D, KOSCHNICK, F. K, SPAETH, J.-M, BEAUMONT, B, GIBART, P

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Sputter deposition-induced electron traps in epitaxially grown n-GaN by Auret, F. D., Goodman, S. A., Koschnick, F. K., Spaeth, J.-M., Beaumont, B., Gibart, P.

“…We have used deep level transient spectroscopy to study the electrical properties of defects introduced in epitaxial n-GaN during sputter deposition of Au…”
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Optically detected magnetic resonance study of defects in undoped, Be-doped, and Mg-doped GaN by KOSCHNICK, F. K, MICHAEL, K, SPAETH, J.-M, BEAUMONT, B, GIBART, P, CALLEJA, E, MUNOZ, E

“…Undoped, Be-doped, and Mg-doped GaN samples were investigated with photoluminescence-detected EPR (PL-EPR) and electron-nuclear double resonance (PL-ENDOR)…”
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Experimental evidence for the aggregation of photostimulable centers in BaFBr:Eu2+ single crystals by cross relaxation spectroscopy by KOSCHNICK, F. K, SPAETH, J.-M, EACHUS, R. S, MCDUGLE, W. G, NUTTALL, R. H. D

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Metallisation induced electron traps in epitaxially grown n-type GaN by AURET, F. D, GOODMAN, S. A, MEYER, W. E, KOSCHNICK, F. K, SPAETH, J.-M, BEAUMONT, B, GIBART, P

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Generation of EL2 defects by a 6-MeV proton irradiation of semi-insulating GaAs by Goodman, S.A., Koschnick, F.K., Weber, Ch, Spaeth, J.-M., Auret, F.D.

“…The defects introduced in a bulk semi-insulating (SI) GaAs by a 6-MeV proton irradiation at 300 K were investigated with the electron paramagnetic resonance…”
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Structural Analysis of Intrinsic Defects in GaAs and AlxGa1-xAs by Magnetooptically Detected Magnetic Resonance Spectroscopy by Koschnick, F.K., Spaeth, J.-M.

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Investigations of As-antisite-related defects in GaAs by KOSCHNICK, F. K, KRAMBROCK, K, HESSE, M, SPAETH, J.-M

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Field-enhanced emission rate and electronic properties of a defect introduced in n-GaN by 5.4 MeV He-ion irradiation by Goodman, S. A., Auret, F. D., Koschnick, F. K., Spaeth, J.-M., Beaumont, B., Gibart, P.

“…A deep level defect ER3, introduced in n-GaN by high energy (5.4 MeV) He ions, was characterized by deep level transient spectroscopy (DLTS). This defect,…”
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Optical detection of electron nuclear double resonance on a residual donor in wurtzite GaN by Koschnick, FK, Michael, K, Spaeth, J, Beaumont, B, Gibart, P

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Optically detected magnetic-resonance mapping on the yellow luminescence in GaN by Koschnick, F. K., Michael, K., Spaeth, J.-M., Beaumont, B., Gibart, P.

“…A mapping investigation was performed with photoluminescence-detected electron paramagnetic resonance (PL-EPR) via the yellow luminescence on nominally…”
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Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts by Auret, F.D, Goodman, S.A, Myburg, G, Koschnick, F.K, Spaeth, J.-M, Beaumont, B, Gibart, P

“…We have used deep-level transient spectroscopy (DLTS) to study the electrical properties of defects introduced in epitaxial n-GaN during electron beam (EB)…”
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ODEPR and yellow luminescence intensity in GaN under high pressure by Michael, K., Rogulis, U., Koschnick, F.K., Tröster, Th, Spaeth, J.-M., Beaumont, B., Gibart, P.

“…Optically detected electron paramagnetic resonance (ODEPR) measurements in the yellow luminescence (YL) under pressures up to 7 GPa have been performed. A…”
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Correlation of two diamagnetic bands of the magnetic circular dichroism of the optical absorption with EL2 in GaAs by Wietzke, K. H., Koschnick, F. K., Krambrock, K.

“…In a previous investigation, a diamagnetic band of the magnetic circular dichroism of the optical absorption (MCDA) in semi-insulating GaAs centered at 1.19 eV…”
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Metastable-like behaviour of a sputter deposition-induced electron trap in n-GaN by Auret, F.D., Meyer, W.E., Goodman, S.A., Koschnick, F.K., Spaeth, J.-M., Beaumont, B., Gibart, P.

“…We show that a deep level, the ES1, introduced in n-GaN by sputter-deposition of gold Schottky contacts exhibits metastable-like behaviour during temperature…”
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Investigations of undoped and Mg-doped wurtzite GaN with luminescence-detected paramagnetic resonance in the 4 mm band by Koschnick, F.K, Michael, K, Spaeth, J.-M, Beaumont, B, Gibart, P, Off, J, Sohmer, A, Scholz, F

“…Nominally undoped and Mg-doped wurtzite GaN grown with MOVPE on sapphire substrates were investigated with photoluminescence-detected electron paramagnetic…”
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Optically detected electron nuclear double resonance on the residual donor in GaN by Koschnick, F.K., Michael, K., Spaeth, J.-M., Beaumont, B., Gibart, P.

“…Optically detected electron nuclear double resonance (ODENDOR) was measured in the 2.2 eV ‘yellow’ luminescence band associated with the residual donor in…”
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Optically detected electron-paramagnetic-resonance investigations of the substitutional oxygen defect in gallium arsenide by Koschnick, F. K., Linde, M., Pinheiro, M. V. B., Spaeth, J.-M.

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