Search Results - "KORNDÖRFER, Falk"

Differential-Mode Power Detection for Built-In Self-Test of SiGe Automotive Radar Transceiver Front Ends by Wenger, Yannick, Ng, Herman Jalli, Korndorfer, Falk, Meinerzhagen, Bernd, Issakov, Vadim

“…Recently, the feasibility of differential-mode power detection for built-in self-test (BIST) in millimeter-wave SiGe transceiver front ends has been…”
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Compact Large-Signal Shot-Noise Model for HBTs by Rudolph, M., Korndorfer, F., Heymann, P., Heinrich, W.

“…A new description of the shot noise in HBTs is proposed that accounts for the correlation of the sources. It can easily be included in large-signal models,…”
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Performance Comparison of Broadband Traveling Wave Amplifiers in 130-nm SiGe:C SG13G2 and SG13G3 BiCMOS Technologies by Inac, Mesut, Fatemi, Adel, Korndorfer, Falk, Rucker, Holger, Gerfers, Friedel, Malignaggi, Andrea

“…In this letter, a comparison between two ultra-wideband traveling wave amplifiers (TWAs) designed in two different SiGe:C technologies consuming only 500 mW is…”
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A 0.13 \mu} SiGe BiCMOS Technology Featuring f /f of 240/330 GHz and Gate Delays Below 3 ps by Rücker, Holger, Heinemann, Bernd, Winkler, Wolfgang, Barth, R, Borngraber, J, Drews, J, Fischer, Gerhard G, Fox, Alexander, Grabolla, Thomas, Haak, U, Knoll, Dieter, Korndörfer, Falk, Mai, Andreas, Marschmeyer, Steffen, Schley, P, Schmidt, D, Schmidt, J, Schubert, Markus Andreas, Schulz, K, Tillack, Bernd, Wolansky, D, Yamamoto, Yuji

“…A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies f T of…”
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DC-Coupled Ultra Broadband Differential to Single-Ended Active Balun in 130-nm SiGe BiCMOS Technology by Iseini, Festim, Malignaggi, Andrea, Korndorfer, Falk, Kahmen, Gerhard

“…The dc-coupled (DCC) broadband operation is a fundamental requirement in many applications, especially in optical communication systems. However, circuits…”
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Lumped Ultra-Broadband Linear Driver in 130 nm SiGe SG13G3 Technology by Iseini, Festim, Malignaggi, Andrea, Korndorfer, Falk, Inac, Mesut, Kahmen, Gerhard

“…In this paper, a fully differential lumped linear driver for optical modulators using the novel high performance 130 nm IHP SG13G3 BiCMOS technology, featuring…”
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Layout based electro-thermal simulation setup by Korndorfer, Falk, Datsuk, Anton, Kaynak, Mehmet

“…In this work we demonstrate the use of an electro-thermal simulation software to simulate the thermal resistance of SiGe HBTs. The method uses a co-simulation…”
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Automated Extraction of Silicon Dioxide Thermal Conductivity Values Based on Electro-Thermal Simulations by Datsuk, Anton, Korndorfer, Falk, Kaynak, Mehmet, Cao, Zhibo, Dhawan, Kevin, Timochenkov, Valeri

“…An approach to extract the silicon dioxide thermal conductivity values is presented. A variety of metal resistor test structures are produced using a 0.25 μm…”
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Lumped modeling of integrated MIM capacitors for RF applications by Korndorfer, Falk, Muhlhaus, Volker

“…This paper presents a scalable MIM capacitor model that is applicable at RF and mm-wave frequencies. The model parameters are obtained from electromagnetic…”
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A 0.13 μm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps : The 23rd bipolar/BICMOS circuits and technology meeting by RÜCKER, Holger, HEINEMANN, Bernd, KNOLL, Dieter, KORNDÖRFER, Falk, MAI, Andreas, MARSCHMEYER, Steffen, SCHLEY, P, SCHMIDT, D, SCHMIDT, J, ANDREAS SCHUBERT, Markus, SCHULZ, K, TILLACK, Bernd, WINKLER, Wolfgang, WOLANSKY, D, YAMAMOTO, Yuji, BARTH, R, BORNGRÄBER, J, DREWS, J, FISCHER, Gerhard G, FOX, Alexander, GRABOLLA, Thomas, HAAK, U

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A Small-Area, Low-Power 76-81GHz HBT-based Differential Power Detector for Built-In Self-Test in Automotive Radar Applications by Wenger, Yannick, Ng, Herman Jalli, Korndorfer, Falk, Meinerzhagen, Bernd, Issakov, Vadim

“…This paper presents a differential power detector for automotive radar applications based on the nonlinearity of a SiGe HBT. Compared to other commonly used…”
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High-Q passives for mm-wave SiGe applications by Kaynak, M., Korndorfer, F., Wipf, C., Scholz, R., Tillack, B., Wan-Gyu Lee, Young Soo Kim, Jung Jae Yoo, Jeoung Woo Kim

“…Deep-silicon etching technique was used for achieving high-Q inductors in a 0.25 mum SiGe:C BiCMOS process. Low-resistive silicon regions under passive…”
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Simulation and measurement of back side etched inductors by Korndörfer, Falk, Kaynak, Mehmet, Mühlhaus, Volker

“…Deep-silicon etching was applied to an inductor in a 0.25 μm SiGe:C BiCMOS process. Significant increase of quality factor was achieved. Different simulations…”
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Simulation and measurement of back side etched inductors by Korndörfer, Falk, Kaynak, Mehmet, Mühlhaus, Volker

“…Deep-silicon etching was applied to an inductor in a 0.25 μm SiGe:C BiCMOS process. Significant increase of quality factor was achieved. Different simulations…”
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A 0.13 [Formula Omitted] SiGe BiCMOS Technology Featuring f[Formula Omitted]/f[Formula Omitted] of 240/330 GHz and Gate Delays Below 3 ps by Rucker, Holger, Heinemann, Bernd, Winkler, Wolfgang, Barth, R, Borngraber, J, Drews, J, Fischer, Gerhard G, Fox, Alexander, Grabolla, Thomas, Haak, U, Knoll, Dieter, Korndorfer, Falk, Mai, Andreas, Marschmeyer, Steffen, Schley, P, Schmidt, D, Schmidt, J, Schubert, Markus Andreas, Schulz, K, Tillack, Bernd, Wolansky, D, Yamamoto, Yuji

“…A 0.13 [Formula Omitted] SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit…”
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A 0.13 mu hbox m SiGe BiCMOS Technology Featuring f T /f max of 240/330 GHz and Gate Delays Below 3 ps by Rucker, Holger, Heinemann, Bernd, Winkler, Wolfgang, Barth, R, Borngraber, J, Drews, J, Fischer, Gerhard G, Fox, Alexander, Grabolla, Thomas, Haak, U, Knoll, Dieter, Korndorfer, Falk, Mai, Andreas, Marschmeyer, Steffen, Schley, P, Schmidt, D, Schmidt, J, Schubert, Markus Andreas, Schulz, K, Tillack, Bernd, Wolansky, D, Yamamoto, Yuji

“…A 0.13 mu hbox m SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies f…”
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A Dual-Modulus Frequency Divider up to 128 GHz in SiGe BiCMOS Technology by Ergintav, Arzu, Herzel, Frank, Korndorfer, Falk, Mausolf, Thomas, Kissinger, Dietmar, Fischer, Gunter

“…This paper describes a 2/3 dual-modulus frequency divider operating up to an input frequency of 128 GHz. It is built with emitter-coupled logic (ECL) based…”
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Differential Coupler Topologies for Built-In Self-Test of SiGe Automotive Radar Transceivers by Wenger, Yannick, Ng, Herman Jalli, Korndorfer, Falk, Meinerzhagen, Bernd, Issakov, Vadim

“…This paper presents two differential directional coupler topologies for millimeter-wave built-in self-test (BIST) in the 76 GHz to 81 GHz automotive radar…”
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94 GHz Amplifier in SiGe Technology by Winkler, W., Borngraber, J., Korndorfer, F., Scheytt, C.

“…A 94 GHz ampliffier fabricated in 0.25 μm SiGe BiCMOS technology and using a novel transmission line structure is presented. The circuit is a two-stage cascode…”
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Very High-Speed Waveguide Integrated Germanium Photo Detectors by Lischke, Stefan, Peczek, Anna, Steckler, Daniel, Korndorfer, Falk, Morgan, Jesse, Beling, Andreas, Zimmermann, Lars

“…We present a photodiode in which germanium is laterally sandwiched in between complementary in-situ doped silicon layers. We demonstrate optoelectrical 3-dB…”
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