Search Results - "KOPPERSCHMIDT, P"
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Tetragonal photonic woodpile structures
Published in Applied physics. B, Lasers and optics (01-07-2003)Get full text
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Tunable band gaps in electro-optical photonic bi-oriented crystals
Published in Applied physics. B, Lasers and optics (01-11-2001)“…Electrically induced birefringence is studied in photonic bi-oriented crystals in terms of molding lightflow in optical devices. In photonic bi-oriented…”
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“Compliant” twist-bonded GaAs substrates: The potential role of pinholes
Published in Applied physics letters (18-01-1999)“…By twist wafer bonding, thin (100) GaAs layers were transferred onto (100) GaAs handling wafers in order to fabricate structures like those suggested in the…”
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Fundamental issues in wafer bonding
Published in Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (01-07-1999)“…Semiconductor wafer bonding has increasingly become a technology of choice for materials integration in microelectronics, optoelectronics, and…”
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Wafer bonding for microsystems technologies
Published in Sensors and actuators. A, Physical (20-04-1999)“…In microsystems technologies, frequently complex structures consisting of structured or plain silicon or other wafers have to be joined to one mechanically…”
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Journal Article Conference Proceeding -
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Materials integration of gallium arsenide and silicon by wafer bonding
Published in Applied physics letters (15-06-1998)“…We present a technique for the fabrication of materials integration of (100) silicon and (100) gallium arsenide by direct wafer bonding. GaAs wafers 3 in. in…”
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Interface defects in integrated hybrid semiconductors by wafer bonding
Published in Physica. B, Condensed matter (01-12-2001)“…The integration of materials by wafer bonding offers novel device fabrication for applications in micromechanics, microelectronics, and optoelectronics. Two…”
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High bond energy and thermomechanical stress in silicon on sapphire wafer bonding
Published in Applied physics letters (02-06-1997)“…Silicon on sapphire wafer pairs are formed by direct wafer bonding of 3-in. silicon and sapphire wafers. Subsequent annealing commonly used to increase the…”
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Wafer bonding of gallium arsenide on sapphire
Published in Applied physics. A, Materials science & processing (01-06-1997)Get full text
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10
Phase identification of micro and macro bubbles at the interface of directly bonded GaAs on sapphire
Published in Journal of materials science (01-04-1998)“…Direct wafer bonding (DWB) of 3″ GaAs and R-cut sapphire was performed in a microcleanroom using ultra pure water as cleaning agent. The initial bonding is…”
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Optimisation of the wire-shadow TEM cross-section preparation technique
Published in Ultramicroscopy (01-12-1997)“…The wire-shadow technique is a simple and easy-to-use preparation method of cross-section specimens for TEM investigations. The method has been optimised for…”
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Multichannel process monitor for real-time film thickness and rate measurements in dry etching and deposition
Published in Vacuum (01-12-1998)“…The versatile multichannel process monitor system, MPM- X, designed for the online control of plasma and ion beam etching and deposition is introduced. It…”
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Back-to-back substrate wafer bonding : A new approach to the fabrication of double-side coated wafers
Published in Applied physics. A, Materials science & processing (01-02-1997)Get full text
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Semiconductor wafer bonding. A flexible approach to materials combinations in microelectronics; micromechanics and optoelectronics
Published in 1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings (1997)“…The wafer bonding approach, originally developed mostly for the fabrication of silicon-on-insulator (SOI) substrates, has matured to a flexible technology…”
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Conference Proceeding -
15
Monitoring internal heat fluxes on Pulsating Heat Pipes using Kalman filter – Numerical and experimental results
Published in Applied thermal engineering (15-05-2024)“…•Proposes an innovative approach to real-time monitoring of heat flux in Pulsating Heat Pipes (PHP).•Utilizes the Kalman Filter to estimate internal heat flux,…”
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Interface defects in integrated hybrid semiconductors by wafer bonding
Published in Physica. B, Condensed matter (2001)Get full text
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Wafer bonding: a flexible approach to materials integration
Published in Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) (1999)“…"Wafer bonding" refers to the phenomenon that mirror-polished, flat and clean surfaces of almost any material, when brought into contact at room temperature,…”
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Conference Proceeding