Search Results - "KOPPERSCHMIDT, P"

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    Tunable band gaps in electro-optical photonic bi-oriented crystals by KOPPERSCHMIDT, P

    Published in Applied physics. B, Lasers and optics (01-11-2001)
    “…Electrically induced birefringence is studied in photonic bi-oriented crystals in terms of molding lightflow in optical devices. In photonic bi-oriented…”
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    Journal Article
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    “Compliant” twist-bonded GaAs substrates: The potential role of pinholes by Kopperschmidt, P., Senz, St, Scholz, R., Gösele, U.

    Published in Applied physics letters (18-01-1999)
    “…By twist wafer bonding, thin (100) GaAs layers were transferred onto (100) GaAs handling wafers in order to fabricate structures like those suggested in the…”
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    Journal Article
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    Fundamental issues in wafer bonding by Gösele, U., Bluhm, Y., Kästner, G., Kopperschmidt, P., Kräuter, G., Scholz, R., Schumacher, A., Senz, St, Tong, Q.-Y., Huang, L.-J., Chao, Y.-L., Lee, T. H.

    “…Semiconductor wafer bonding has increasingly become a technology of choice for materials integration in microelectronics, optoelectronics, and…”
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    Conference Proceeding Journal Article
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    Wafer bonding for microsystems technologies by Gösele, U., Tong, Q.-Y., Schumacher, A., Kräuter, G., Reiche, M., Plößl, A., Kopperschmidt, P., Lee, T.-H., Kim, W.-J.

    Published in Sensors and actuators. A, Physical (20-04-1999)
    “…In microsystems technologies, frequently complex structures consisting of structured or plain silicon or other wafers have to be joined to one mechanically…”
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    Journal Article Conference Proceeding
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    Materials integration of gallium arsenide and silicon by wafer bonding by Kopperschmidt, P., Senz, S., Kästner, G., Hesse, D., Gösele, U. M.

    Published in Applied physics letters (15-06-1998)
    “…We present a technique for the fabrication of materials integration of (100) silicon and (100) gallium arsenide by direct wafer bonding. GaAs wafers 3 in. in…”
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    Journal Article
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    Interface defects in integrated hybrid semiconductors by wafer bonding by Kopperschmidt, P., Senz, St, Scholz, R.

    Published in Physica. B, Condensed matter (01-12-2001)
    “…The integration of materials by wafer bonding offers novel device fabrication for applications in micromechanics, microelectronics, and optoelectronics. Two…”
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    Journal Article
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    High bond energy and thermomechanical stress in silicon on sapphire wafer bonding by Kopperschmidt, P., Kästner, G., Hesse, D., Zakharov, N. D., Gösele, U.

    Published in Applied physics letters (02-06-1997)
    “…Silicon on sapphire wafer pairs are formed by direct wafer bonding of 3-in. silicon and sapphire wafers. Subsequent annealing commonly used to increase the…”
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    Journal Article
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    Phase identification of micro and macro bubbles at the interface of directly bonded GaAs on sapphire by SENZ, S, KOPPERSCHMIDT, P, KÄSTNER, G, HESSE, D

    Published in Journal of materials science (01-04-1998)
    “…Direct wafer bonding (DWB) of 3″ GaAs and R-cut sapphire was performed in a microcleanroom using ultra pure water as cleaning agent. The initial bonding is…”
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    Journal Article
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    Optimisation of the wire-shadow TEM cross-section preparation technique by Senz, S, Kopperschmidt, P, Langer, E, Sieber, H, Hesse, D

    Published in Ultramicroscopy (01-12-1997)
    “…The wire-shadow technique is a simple and easy-to-use preparation method of cross-section specimens for TEM investigations. The method has been optimised for…”
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    Journal Article
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    Multichannel process monitor for real-time film thickness and rate measurements in dry etching and deposition by Heinrich, F, Heinze, D, Kowalski, T, Hoffmann, P, Kopperschmidt, P

    Published in Vacuum (01-12-1998)
    “…The versatile multichannel process monitor system, MPM- X, designed for the online control of plasma and ion beam etching and deposition is introduced. It…”
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    Journal Article
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    Semiconductor wafer bonding. A flexible approach to materials combinations in microelectronics; micromechanics and optoelectronics by Gosele, U., Alexe, M., Kopperschmidt, P., Tong, Q.-Y.

    “…The wafer bonding approach, originally developed mostly for the fabrication of silicon-on-insulator (SOI) substrates, has matured to a flexible technology…”
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    Conference Proceeding
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    Monitoring internal heat fluxes on Pulsating Heat Pipes using Kalman filter – Numerical and experimental results by Margotto, Bruno H.M., Kopperschmidt, Carlos E.P., Colaço, Marcelo J., da Silva, Wellington B., Bozzoli, Fabio, Cattani, Luca, Pagliarini, Luca

    Published in Applied thermal engineering (15-05-2024)
    “…•Proposes an innovative approach to real-time monitoring of heat flux in Pulsating Heat Pipes (PHP).•Utilizes the Kalman Filter to estimate internal heat flux,…”
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    Journal Article
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    Wafer bonding: a flexible approach to materials integration by Gosele, U., Kastner, G., Senz, S., Kopperschmidt, P., Plossl, A., Scholz, R., Tong, Q.-Y., Chao, Y.-L., Huang, L.-J.

    “…"Wafer bonding" refers to the phenomenon that mirror-polished, flat and clean surfaces of almost any material, when brought into contact at room temperature,…”
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    Conference Proceeding