Search Results - "KOLESKE, Daniel"

Refine Results
  1. 1

    Nonpolar InGaN/GaN Core–Shell Single Nanowire Lasers by Li, Changyi, Wright, Jeremy B, Liu, Sheng, Lu, Ping, Figiel, Jeffrey J, Leung, Benjamin, Chow, Weng W, Brener, Igal, Koleske, Daniel D, Luk, Ting-Shan, Feezell, Daniel F, Brueck, S. R. J, Wang, George T

    Published in Nano letters (08-02-2017)
    “…We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core–shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers…”
    Get full text
    Journal Article
  2. 2

    Toward Smart and Ultra‐efficient Solid‐State Lighting by Tsao, Jeffrey Y., Crawford, Mary H., Coltrin, Michael E., Fischer, Arthur J., Koleske, Daniel D., Subramania, Ganapathi S., Wang, G. T., Wierer, Jonathan J., Karlicek, Robert F.

    Published in Advanced optical materials (01-09-2014)
    “…Solid‐state lighting has made tremendous progress this past decade, with the potential to make much more progress over the coming decade. In this article, the…”
    Get full text
    Journal Article
  3. 3

    Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays by Li, Qiming, Westlake, Karl R, Crawford, Mary H, Lee, Stephen R, Koleske, Daniel D, Figiel, Jeffery J, Cross, Karen C, Fathololoumi, Saeed, Mi, Zetian, Wang, George T

    Published in Optics express (05-12-2011)
    “…Vertically aligned InGaN/GaN nanorod light emitting diode (LED) arrays were created from planar LED structures using a new top-down fabrication technique…”
    Get full text
    Journal Article
  4. 4

    Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core–Shell Nanowire Light-Emitting Diode Array by Riley, James R, Padalkar, Sonal, Li, Qiming, Lu, Ping, Koleske, Daniel D, Wierer, Jonathan J, Wang, George T, Lauhon, Lincoln J

    Published in Nano letters (11-09-2013)
    “…Correlated atom probe tomography, cross-sectional scanning transmission electron microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN…”
    Get full text
    Journal Article
  5. 5

    Correlated high-resolution x-ray diffraction, photoluminescence, and atom probe tomography analysis of continuous and discontinuous InxGa1−xN quantum wells by Ren, Xiaochen, Riley, James R., Koleske, Daniel D., Lauhon, Lincoln J.

    Published in Applied physics letters (13-07-2015)
    “…Atom probe tomography (APT) is used to characterize the influence of hydrogen dosing during GaN barrier growth on the indium distribution of InxGa1−xN quantum…”
    Get full text
    Journal Article
  6. 6

    Nanocrystal-Based Light-Emitting Diodes Utilizing High-Efficiency Nonradiative Energy Transfer for Color Conversion by Achermann, Marc, Petruska, Melissa A, Koleske, Daniel D, Crawford, Mary H, Klimov, Victor I

    Published in Nano letters (01-07-2006)
    “…We report a practical implementation of high-efficiency color conversion in an electrically pumped light-emitting diode (LED) using nonradiative energy…”
    Get full text
    Journal Article
  7. 7

    Energy-transfer pumping of semiconductor nanocrystals using an epitaxial quantum well by Achermann, Marc, Klimov, Victor I, Petruska, Melissa A, Kos, Simon, Smith, Darryl L, Koleske, Daniel D

    Published in Nature (10-06-2004)
    “…As a result of quantum-confinement effects, the emission colour of semiconductor nanocrystals can be modified dramatically by simply changing their size. Such…”
    Get full text
    Journal Article
  8. 8

    Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers by Huang, Xuanqi, Chen, Hong, Fu, Houqiang, Baranowski, Izak, Montes, Jossue, Yang, Tsung-Han, Fu, Kai, Gunning, Brendan P., Koleske, Daniel D., Zhao, Yuji

    Published in Applied physics letters (23-07-2018)
    “…In this paper, we perform a comprehensive study on energy band engineering of InGaN multi-quantum-well (MQW) solar cells using AlGaN electron- and…”
    Get full text
    Journal Article
  9. 9

    Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells Using Scanning Photocurrent Microscopy by Howell, Sarah L, Padalkar, Sonal, Yoon, KunHo, Li, Qiming, Koleske, Daniel D, Wierer, Jonathan J, Wang, George T, Lauhon, Lincoln J

    Published in Nano letters (13-11-2013)
    “…GaN–InGaN core–shell nanowire array devices are characterized by spectrally resolved scanning photocurrent microscopy (SPCM). The spatially resolved external…”
    Get full text
    Journal Article
  10. 10

    Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots by Xiao, Xiaoyin, Fischer, Arthur J, Wang, George T, Lu, Ping, Koleske, Daniel D, Coltrin, Michael E, Wright, Jeremy B, Liu, Sheng, Brener, Igal, Subramania, Ganapathi S, Tsao, Jeffrey Y

    Published in Nano letters (08-10-2014)
    “…We demonstrate a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10 nm size regime: quantum-size-controlled…”
    Get full text
    Journal Article
  11. 11

    Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers by Al Muyeed, Syed Ahmed, Sun, Wei, Wei, Xiongliang, Song, Renbo, Koleske, Daniel D., Tansu, Nelson, Wierer, Jonathan J.

    Published in AIP advances (01-10-2017)
    “…Data are presented on strain compensation in InGaN-based multiple quantum wells (MQW) using AlGaN interlayers (ILs). The MQWs consist of five periods of…”
    Get full text
    Journal Article
  12. 12

    Multicolor Light-Emitting Diodes Based on Semiconductor Nanocrystals Encapsulated in GaN Charge Injection Layers by Mueller, Alexander H, Petruska, Melissa A, Achermann, Marc, Werder, Donald J, Akhadov, Elshan A, Koleske, Daniel D, Hoffbauer, Mark A, Klimov, Victor I

    Published in Nano letters (01-06-2005)
    “…Numerous technologies including solid-state lighting, displays, and traffic signals can benefit from efficient, color-selectable light sources that are driven…”
    Get full text
    Journal Article
  13. 13

    Ultrafast and band-selective Auger recombination in InGaN quantum wells by Williams, Kristopher W., Monahan, Nicholas R., Koleske, Daniel D., Crawford, Mary H., Zhu, X.-Y.

    Published in Applied physics letters (04-04-2016)
    “…In InGaN quantum well based light-emitting diodes, Auger recombination is believed to limit the quantum efficiency at high injection currents. Here, we report…”
    Get full text
    Journal Article
  14. 14

    Log-Pile TiO2 Photonic Crystal for Light Control at Near-UV and Visible Wavelengths by Subramania, Ganapathi, Lee, Yun-Ju, Fischer, Arthur J., Koleske, Daniel D.

    Published in Advanced materials (Weinheim) (26-01-2010)
    “…Three‐dimensional photonic crystals with an omnidirectional bandgap at visible frequencies can have significant impact on solid‐state lighting and solar‐energy…”
    Get full text
    Journal Article
  15. 15

    Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs by Wang, George T., Li, Qiming, Wierer, Jonathan J., Koleske, Daniel D., Figiel, Jeffrey J.

    “…Complex axial and radial type III‐nitride InGaN/GaN nanowire LEDs are realized using a recently developed top–down fabrication approach which enables high…”
    Get full text
    Journal Article
  16. 16

    Multi-Colour Nanowire Photonic Crystal Laser Pixels by Wright, Jeremy B., Liu, Sheng, Wang, George T., Li, Qiming, Benz, Alexander, Koleske, Daniel D., Lu, Ping, Xu, Huiwen, Lester, Luke, Luk, Ting S., Brener, Igal, Subramania, Ganapathi

    Published in Scientific reports (18-10-2013)
    “…Emerging applications such as solid-state lighting and display technologies require micro-scale vertically emitting lasers with controllable distinct lasing…”
    Get full text
    Journal Article
  17. 17

    Influence of pH on the Quantum-Size-Controlled Photoelectrochemical Etching of Epitaxial InGaN Quantum Dots by Xiao, Xiaoyin, Lu, Ping, Fischer, Arthur J, Coltrin, Michael E, Wang, George T, Koleske, Daniel D, Tsao, Jeffrey Y

    Published in Journal of physical chemistry. C (17-12-2015)
    “…Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by…”
    Get full text
    Journal Article
  18. 18

    Photoelectrochemical etching of epitaxial InGaN thin films: self-limited kinetics and nanostructuring by Xiao, Xiaoyin, Fischer, Arthur J., Coltrin, Michael E., Lu, Ping, Koleske, Daniel D., Wang, George T., Polsky, Ronen, Tsao, Jeffrey Y.

    Published in Electrochimica acta (20-04-2015)
    “…We report here the characteristics of photoelectrochemical (PEC) etching of epitaxial InGaN semiconductor thin films using a narrowband laser with a linewidth…”
    Get full text
    Journal Article
  19. 19

    Improving emission uniformity and linearizing band dispersion in nanowire arrays using quasi-aperiodicity by Anderson, P. Duke, Koleske, Daniel D., Povinelli, Michelle L., Subramania, Ganapathi

    Published in Optical materials express (01-10-2017)
    “…We experimentally investigate a new class of quasi-aperiodic structures for improving the emission pattern in nanowire arrays. Efficient normal emission, as…”
    Get full text
    Journal Article
  20. 20

    Nonradiative energy transfer between colloidal quantum dot-phosphors and nanopillar nitride LEDs by Zhang, Fan, Liu, Jie, You, Guanjun, Zhang, Chunfeng, Mohney, Suzanne E, Park, Min Joo, Kwak, Joon Seop, Wang, Yongqiang, Koleske, Daniel D, Xu, Jian

    Published in Optics express (12-03-2012)
    “…We present in this communication our study of the nonradiative energy transfer between colloidal quantum dot (QD) phosphors and nitride nanopillar light…”
    Get full text
    Journal Article