Search Results - "KOHLSTEDT, H"

Emerging memories: resistive switching mechanisms and current status by Jeong, Doo Seok, Thomas, Reji, Katiyar, R S, Scott, J F, Kohlstedt, H, Petraru, A, Hwang, Cheol Seong

“…The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices,…”
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Synchronization of two memristively coupled van der Pol oscillators by Ignatov, M., Hansen, M., Ziegler, M., Kohlstedt, H.

“…The objective of this letter is to convey two essential principles of biological computing—synchronization and memory—in an electronic circuit with two van der…”
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A double barrier memristive device by Hansen, M., Ziegler, M., Kolberg, L., Soni, R., Dirkmann, S., Mussenbrock, T., Kohlstedt, H.

“…We present a quantum mechanical memristive Nb/Al/Al 2 O 3 /Nb x O y /Au device which consists of an ultra-thin memristive layer (Nb x O y ) sandwiched between…”
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Theoretical current-voltage characteristics of ferroelectric tunnel junctions by Kohlstedt, H., Pertsev, N. A., Rodríguez Contreras, J., Waser, R.

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Experimental evidence of a φ Josephson junction by Sickinger, H, Lipman, A, Weides, M, Mints, R G, Kohlstedt, H, Koelle, D, Kleiner, R, Goldobin, E

“…We demonstrate experimentally the existence of Josephson junctions having a doubly degenerate ground state with an average Josephson phase ψ=±φ. The value of φ…”
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Magnetic tunnel junction on a ferroelectric substrate by Pertsev, N. A., Kohlstedt, H.

“…The concept of a magnetic tunnel junction fabricated on a ferroelectric substrate is described theoretically. It is shown that the application of a moderate…”
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Elastic stabilization of a single-domain ferroelectric state in nanoscale capacitors and tunnel junctions by Pertsev, N A, Kohlstedt, H

“…Taking into account the electrostrictive coupling between inhomogeneous polarization fluctuations and lattice strains in ferroelectric films, we show that, in…”
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Inherent Stochastic Learning in CMOS-Integrated HfO2 Arrays for Neuromorphic Computing by Wenger, C., Zahari, F., Mahadevaiah, M. K., Perez, E., Beckers, I., Kohlstedt, H., Ziegler, M.

“…Based on the inherent stochasticity of CMOS-integrated HfO 2 -based resistive random access memory (RRAM) devices, a new learning algorithm for neuro-morphic…”
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Voltage controlled biaxial strain in VO2 films grown on 0.72Pb(Mg1∕3Nb2∕3)-0.28PbTiO3 crystals and its effect on the transition temperature by Petraru, A., Soni, R., Kohlstedt, H.

“…Vanadium oxide thin films (VO2) were deposited on 0.72Pb(Mg1∕3Nb2∕3)-0.28PbTiO3 (PMN-PT) crystalline substrates using pulsed laser deposition method. Due to…”
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0-pi Josephson tunnel junctions with ferromagnetic barrier by Weides, M, Kemmler, M, Kohlstedt, H, Waser, R, Koelle, D, Kleiner, R, Goldobin, E

“…We fabricated high quality Nb/Al2O3/Ni(0.6)Cu(0.4)/Nb superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Using a ferromagnetic…”
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Resistive switching in metal–ferroelectric–metal junctions by Rodrı́guez Contreras, J., Kohlstedt, H., Poppe, U., Waser, R., Buchal, C., Pertsev, N. A.

“…The aim of this work is to investigate the electron transport through metal–ferroelectric–metal (MFM) junctions with ultrathin barriers in order to determine…”
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Digging deeper: Buried layers and interfaces studied by modified total electron yield and soft x-ray absorption spectroscopy by Kröger, E., Petraru, A., Hanff, A., Soni, R., Kalläne, M., Denlinger, J. D., Learmonth, T., Guo, J.-H., Smith, K. E., Schneller, T., Freelon, B., Kipp, L., Kohlstedt, H., Rossnagel, K., Kolhatkar, G.

“…We report on the soft x-ray absorption spectroscopy investigation of thin film capacitors using a modified total electron yield detection mode. This mode…”
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The effect of normal and insulating layers on 0- π transitions in Josephson junctions with a ferromagnetic barrier by D M Heim, Pugach, N G, Kupriyanov, M Yu, Goldobin, E, Koelle, D, Kleiner, R, Ruppelt, N, Weides, M, Kohlstedt, H

“…Using the Usadel approach, we provide a formalism that allows us to calculate the critical current density of 21 different types of Josephson junctions (JJs)…”
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Memristive operation mode of floating gate transistors: A two-terminal MemFlash-cell by Ziegler, M., Oberländer, M., Schroeder, D., Krautschneider, W. H., Kohlstedt, H.

“…A memristive operation mode of a single floating gate transistor is presented. The device resistance varied accordingly to the charge flow through the device…”
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Misfit dislocations in nanoscale ferroelectric heterostructures by Nagarajan, V., Jia, C. L., Kohlstedt, H., Waser, R., Misirlioglu, I. B., Alpay, S. P., Ramesh, R.

“…We present a quantitative study of the thickness dependence of the polarization and piezoelectric properties in epitaxial (001) PbZr 0.52 Ti 0.48 O 3 films…”
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Observation of 0– π transition in SIsFS Josephson junctions by Ruppelt, N., Sickinger, H., Menditto, R., Goldobin, E., Koelle, D., Kleiner, R., Vavra, O., Kohlstedt, H.

“…The 0–π transition in Superconductor-Insulator-superconductor-Ferromagnet-Superconductor (SIsFS) Josephson junctions (JJs) was investigated experimentally. As…”
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Method to distinguish ferroelectric from nonferroelectric origin in case of resistive switching in ferroelectric capacitors by Kohlstedt, H., Petraru, A., Szot, K., Rüdiger, A., Meuffels, P., Haselier, H., Waser, R., Nagarajan, V.

“…We present investigations on the resistive switching effect in SrRuO3∕PbZr0.2Ti0.8O3∕Pt ferroelectric capacitors. Using a conductive atomic force microscope,…”
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A stress sensor based on a silicon field effect transistor comprising a piezoelectric AlN gate dielectric by Winterfeld, H., Thormählen, L., Lewitz, H., Yarar, E., Birkoben, T., Niethe, N., Preinl, N., Hanssen, H., Quandt, E., Kohlstedt, H.

“…Piezoelectric materials have been introduced to transistor gate stacks to improve MOSFET behaviour and develop sensor applications. In this work, we present an…”
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Low-temperature dynamics of ferroelectric domains in PbZr0.3Ti0.7O3 epitaxial thin films studied by piezoresponse force microscopy by Andreeva, N. V., Vakulenko, A. F., Petraru, A., Soni, R., Kohlstedt, H., Filimonov, A. V., Rudskoy, A. I., Vakhrushev, S. B., Pertsev, N. A.

“…Dynamics of domain boundaries is expected to change drastically at low absolute temperatures but direct experimental information for this temperature range is…”
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Size effects in ultrathin epitaxial ferroelectric heterostructures by Nagarajan, V., Prasertchoung, S., Zhao, T., Zheng, H., Ouyang, J., Ramesh, R., Tian, W., Pan, X. Q., Kim, D. M., Eom, C. B., Kohlstedt, H., Waser, R.

“…In this letter we report on the effect of thickness scaling in model PbZr0.2Ti0.8O3(PZT)∕SrRuO3 heterostructures. Although theoretical models for thickness…”
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