Search Results - "KOGUCHI, N"

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  1. 1

    Fabrication of Multiple Concentric Nanoring Structures by Somaschini, C, Bietti, S, Koguchi, N, Sanguinetti, S

    Published in Nano letters (14-10-2009)
    “…We present the fabrication of GaAs/AlGaAs Multiple (from three to five) concentric nanoring structures by an innovative growth method based on droplet epitaxy…”
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    Journal Article
  2. 2

    Nanometer-scale GaAs ring structure grown by droplet epitaxy by Mano, T., Koguchi, N.

    Published in Journal of crystal growth (01-05-2005)
    “…Nanometer-scale GaAs ring structure is self-assembly realized by droplet epitaxy in a lattice-matched system. By changing the As 4 flux intensity during the…”
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    Journal Article Conference Proceeding
  3. 3
  4. 4

    Shape control via surface reconstruction kinetics of droplet epitaxy nanostructures by Somaschini, C., Bietti, S., Koguchi, N., Sanguinetti, S.

    Published in Applied physics letters (15-11-2010)
    “…We present the fabrication and discuss the growth dynamics of two classes of GaAs quantum nanostructures fabricated by droplet epitaxy, namely, double rings…”
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    Journal Article
  5. 5

    Self-assembly of laterally aligned GaAs quantum dot pairs by Yamagiwa, M., Mano, T., Kuroda, T., Tateno, T., Sakoda, K., Kido, G., Koguchi, N., Minami, F.

    Published in Applied physics letters (11-09-2006)
    “…The authors report the fabrication of self-assembled, strain-free Ga As ∕ Al 0.27 Ga 0.73 As quantum dot pairs which are laterally aligned in the growth plane,…”
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    Journal Article
  6. 6

    Ring-shaped GaAs quantum dot laser grown by droplet epitaxy: Effects of post-growth annealing on structural and optical properties by Mano, T., Kuroda, T., Mitsuishi, K., Yamagiwa, M., Guo, X.-J., Furuya, K., Sakoda, K., Koguchi, N.

    Published in Journal of crystal growth (01-04-2007)
    “…We investigated the effects of post-growth annealing on structural and optical properties of self-assembled ring-shaped GaAs quantum dots (QDs) by…”
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    Journal Article Conference Proceeding
  7. 7

    Spectral diffusion and line broadening in single self-assembled GaAs∕AlGaAs quantum dot photoluminescence by Abbarchi, M., Troiani, F., Mastrandrea, C., Goldoni, G., Kuroda, T., Mano, T., Sakoda, K., Koguchi, N., Sanguinetti, S., Vinattieri, A., Gurioli, M.

    Published in Applied physics letters (20-10-2008)
    “…We experimentally and theoretically investigate the photoluminescence broadening of different excitonic complexes in single self-assembled GaAs∕AlGaAs quantum…”
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    Journal Article
  8. 8

    Self-assembled GaAs islands on Si by droplet epitaxy by Somaschini, C., Bietti, S., Koguchi, N., Montalenti, F., Frigeri, C., Sanguinetti, S.

    Published in Applied physics letters (02-08-2010)
    “…We presented an innovative fabrication technique for the self-assembly of GaAs islands on Si substrates by droplet epitaxy. The islands show highly tunable…”
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    Journal Article
  9. 9

    Lasing in GaAs∕AlGaAs self-assembled quantum dots by Mano, T., Kuroda, T., Yamagiwa, M., Kido, G., Sakoda, K., Koguchi, N.

    Published in Applied physics letters (30-10-2006)
    “…The authors have demonstrated photopumped laser action of self-assembled ring-shaped GaAs quantum dots (QDs) grown by droplet epitaxy. Morphological control of…”
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    Journal Article
  10. 10

    Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy by Somaschini, C, Bietti, S, Fedorov, A, Koguchi, N, Sanguinetti, S

    Published in Nanoscale research letters (01-12-2010)
    “…We present the Molecular Beam Epitaxy fabrication of complex GaAs/AlGaAs nanostructures by Droplet Epitaxy, characterized by the presence of concentric…”
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    Journal Article
  11. 11

    Outer zone morphology in GaAs ring/disk nanostructures by droplet epitaxy by Somaschini, C., Bietti, S., Fedorov, A., Koguchi, N., Sanguinetti, S.

    Published in Journal of crystal growth (15-05-2011)
    “…We present the molecular beam epitaxy (MBE) fabrication of GaAs ring/disk nanostructures. In this system, a central quantum ring is surrounded by a flat outer…”
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    Journal Article Conference Proceeding
  12. 12

    Photocatalytic properties of titanium dioxide sputtered on a nanostructured substrate by Turkevych, I., Pihosh, Y., Goto, M., Kasahara, A., Tosa, M., Kato, S., Takehana, K., Takamasu, T., Kido, G., Koguchi, N.

    Published in Thin solid films (03-03-2008)
    “…The effective one-step physical approach is demonstrated for the fabrication of anatase titanium dioxide nanotubes through r.f. magnetron sputtering of TiO 2…”
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    Journal Article Conference Proceeding
  13. 13

    Individual GaAs quantum emitters grown on Ge substrates by Cavigli, L., Abbarchi, M., Bietti, S., Somaschini, C., Sanguinetti, S., Koguchi, N., Vinattieri, A., Gurioli, M.

    Published in Applied physics letters (07-03-2011)
    “…We report on the nucleation of low density and defect-free GaAs quantum dots (QDs) on Ge substrates. The growth of III-V nanostructures was realized via…”
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    Journal Article
  14. 14

    Temperature dependence of the photoluminescence of InGaAs/GaAs quantum dot structures without wetting layer by Sanguinetti, S., Mano, T., Oshima, M., Tateno, T., Wakaki, M., Koguchi, N.

    Published in Applied physics letters (14-10-2002)
    “…We analyze the photoluminescence temperature behavior of InGaAs/GaAs quantum dots grown by heterogeneous droplet epitaxy. Morphologically, these dots are…”
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    Journal Article
  15. 15

    Self-assembled GaAs local artificial substrates on Si by droplet epitaxy by Bietti, S., Somaschini, C., Koguchi, N., Frigeri, C., Sanguinetti, S.

    Published in Journal of crystal growth (15-05-2011)
    “…The fabrication of submicrometer GaAs islands directly on Si substrates by droplet epitaxy is presented. Islands parameters, like density and size, are fully…”
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    Journal Article Conference Proceeding
  16. 16

    Modified droplet epitaxy GaAs/AlGaAs quantum dots grown on a variable thickness wetting layer by Sanguinetti, S., Watanabe, K., Tateno, T., Gurioli, M., Werner, P., Wakaki, M., Koguchi, N.

    Published in Journal of crystal growth (01-06-2003)
    “…We show that the use of modified droplet epitaxy allows to tune the wetting layer thickness in GaAs quantum dot structures. Morphological observations…”
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    Journal Article
  17. 17

    Excitonic and biexcitonic decoherence in self-assembled GaAs quantum dots as observed by phase-locked interferography by Kuroda, K., Kuroda, T., Sakoda, K., Watanabe, K., Koguchi, N., Kido, G.

    Published in Applied physics letters (20-03-2006)
    “…We observe single-photon interferograms for emission of a single self-assembled GaAs quantum dot. A phase stabilizer is applied to the interferometer, enabling…”
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    Journal Article
  18. 18

    Final-state readout of exciton qubits by observing resonantly excited photoluminescence in quantum dots by Kuroda, K., Kuroda, T., Watanabe, K., Mano, T., Sakoda, K., Kido, G., Koguchi, N.

    Published in Applied physics letters (29-01-2007)
    “…The authors report on an approach to detect excitonic qubits in semiconductor quantum dots by observing spontaneous emissions from the relevant qubit level…”
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    Journal Article
  19. 19

    Effects of post-growth annealing on the optical properties of self-assembled GaAs/AlGaAs quantum dots by Sanguinetti, S, Watanabe, K, Kuroda, T, Minami, F, Gotoh, Y, Koguchi, N

    Published in Journal of crystal growth (01-07-2002)
    “…Photoluminescence spectroscopy is used to analyze the effects of post-growth thermal annealing on the electronic properties and capture processes of…”
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    Journal Article
  20. 20

    Role of the wetting layer in the carrier relaxation in quantum dots by Sanguinetti, S., Watanabe, K., Tateno, T., Wakaki, M., Koguchi, N., Kuroda, T., Minami, F., Gurioli, M.

    Published in Applied physics letters (22-07-2002)
    “…We present picosecond time resolved photoluminescence measurements of GaAs/AlGaAs quantum dot structures—grown by modified droplet epitaxy—where no wetting…”
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    Journal Article