Search Results - "KNOLL, Dieter"

High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode by Lischke, Stefan, Knoll, Dieter, Mai, Christian, Zimmermann, Lars, Peczek, Anna, Kroh, Marcel, Trusch, Andreas, Krune, Edgar, Voigt, Karsten, Mai, A

“…A novel waveguide-coupled germanium p-i-n photodiode is demonstrated which combines high responsivity with very high -3 dB bandwidth at a medium dark current…”
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Analysis of mechanical stress in reconstruction plates for bridging mandibular angle defects by Knoll, Wolf-Dieter, Gaida, Andreas, Maurer, Peter

“…The objective of the present study was to evaluate the mechanical stress in reconstruction plates and the screw–plate–bone interface used in bridging a…”
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Base doping and dopant profile control of SiGe npn and pnp HBTs by Tillack, Bernd, Heinemann, Bernd, Knoll, Dieter, Rücker, Holger, Yamamoto, Yuji

“…Incorporation of high doping concentrations and the creation and maintaining of steep doping profiles during processing are key enabler for high level RF…”
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Open-Access Silicon Photonics Platforms in Europe by Rahim, Abdul, Goyvaerts, Jeroen, Szelag, Bertrand, Fedeli, Jean-Marc, Absil, Philippe, Aalto, Timo, Harjanne, Mikko, Littlejohns, Callum, Reed, Graham, Winzer, Georg, Lischke, Stefan, Zimmermann, Lars, Knoll, Dieter, Geuzebroek, Douwe, Leinse, Arne, Geiselmann, Michael, Zervas, Michael, Jans, Hilde, Stassen, Andim, Dominguez, Carlos, Munoz, Pascual, Domenech, David, Giesecke, Anna Lena, Lemme, Max C., Baets, Roel

“…Offering open-access silicon photonics-based technologies has played a pivotal role in unleashing this technology from research laboratories to industry…”
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High performance SiGe:C HBTs using atomic layer base doping by Tillack, Bernd, Yamamoto, Yuji, Knoll, Dieter, Heinemann, Bernd, Schley, Peter, Senapati, Biswanath, Krüger, Dietmar

“…We applied atomic layer processing for base doping of high performance SiGe:C heterojunction bipolar transistors (HBTs) fabricated within a 0.25 μm BiCMOS…”
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A Monolithically Integrated Segmented Linear Driver and Modulator in EPIC 0.25- \mu m SiGe:C BiCMOS Platform by Rito, Pedro, Garcia Lopez, Iria, Petousi, Despoina, Zimmermann, Lars, Kroh, Marcel, Lischke, Stefan, Knoll, Dieter, Micusik, Daniel, Awny, Ahmed, Ulusoy, Ahmet Cagri, Kissinger, Dietmar

“…In this paper, a monolithically integrated segmented linear driver and Mach-Zehnder modulator (MZM) are presented. The transmitter is fabricated in…”
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Novel Ring Resonator Combining Strong Field Confinement With High Optical Quality Factor by Steglich, Patrick, Mai, Christian, Stolarek, David, Lischke, Stefan, Kupijai, Sebastian, Villringer, Claus, Pulwer, Silvio, Heinrich, Friedhelm, Bauer, Joachim, Meister, Stefan, Knoll, Dieter, Casalboni, Mauro, Schrader, Sigurd

“…Slot waveguide ring resonators appear promising candidates for several applications in silicon photonics. Strong field confinement, high device tunability, and…”
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Monolithically Integrated High-Extinction-Ratio MZM With a Segmented Driver in Photonic BiCMOS by Petousi, Despoina, Rito, Pedro, Lischke, Stefan, Knoll, Dieter, Garcia-Lopez, Iria, Kroh, Marcel, Barth, Rainer, Mai, Christian, Ulusoy, Ahmet-Cagri, Peczek, Anna, Winzer, Georg, Voigt, Karsten, Kissinger, Dietmar, Petermann, Klaus, Zimmermann, Lars

“…In this letter, a dual-drive Si depletion-type Mach-Zehnder modulator (MZM) monolithically integrated with a segmented driver using 0.25-μm SiGe:C photonic…”
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Silicon carrier depletion modulator with 10 Gbit/s driver realized in high-performance photonic BiCMOS by Thomson, David J., Porte, Henri, Goll, Bernhard, Knoll, Dieter, Lischke, Stefan, Gardes, Frederic Y., Hu, Youfang, Reed, Graham T., Zimmermann, Horst, Zimmermann, Lars

“…Optical modulators based upon carrier depletion have proven to be effective at achieving high speed operation in silicon. However, when incorporated into…”
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A 25-Gb/s Monolithic Optical Receiver With Improved Sensitivity and Energy Efficiency by Hyun-Yong Jung, Jeong-Min Lee, Lischke, Stefan, Knoll, Dieter, Zimmermann, Lars, Woo-Young Choi

“…A high-performance integrated optical receiver is realized in photonic BiCMOS technology. The receiver includes waveguide type Ge photodetector (PD),…”
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Monolithically Integrated Si Photonics Transmitters in 0.25 um BiCMOS Platform for High-Speed Optical Communications by Lopez, Iria Garcia, Rito, Pedro, Petousi, Despoina, Lischke, Stefan, Knoll, Dieter, Kroh, Marcel, Zimmermann, Lars, Ko, Minsu, Ulusoy, A. Cagri, Kissinger, Dietmar

“…Monolithically integrated electro-optical transmitters fabricated in a 0.25 μm SiGe:C BiCMOS electronic-photonic integrated circuit (EPIC) technology with f T…”
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Radiation Studies of Power LDMOS Devices for High Energy Physics Applications by Díez, Sergio, Ullán, Miguel, Pellegrini, Giulio, Lozano, Manuel, Sorge, Roland, Knoll, Dieter

“…We present radiation hardness studies performed on LDMOS devices included in a 0.25 μm SiGe BiCMOS technology from IHP Microelectronics. Results show…”
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On the Transient Response of a Complementary (npn + pnp) SiGe HBT BiCMOS Technology by Lourenco, Nelson E., Fleetwood, Zachary E., Seungwoo Jung, Cardoso, Adilson S., Chakraborty, Partha S., England, Troy D., Roche, Nicolas J.-H, Khachatrian, Ani, McMorrow, Dale, Buchner, Stephen P., Melinger, Joseph S., Warner, Jeffrey H., Paki, Pauline, Kaynak, Mehmet, Tillack, Bernd, Knoll, Dieter, Cressler, John D.

“…The single-event transient (SET) response of a third-generation bulk C-SiGe ( npn + pnp) BiCMOS platform is investigated for the first time. Pulsed-laser,…”
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Silicon carrier depletion modulator with 10 Gbit/s driver realized in high-performance photonic BiCMOS: Silicon optical modulator with 10 Gbit/s BiCMOS driver by Thomson, David J., Porte, Henri, Goll, Bernhard, Knoll, Dieter, Lischke, Stefan, Gardes, Frederic Y., Hu, Youfang, Reed, Graham T., Zimmermann, Horst, Zimmermann, Lars

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Atomic layer processing for doping of SiGe by Tillack, Bernd, Yamamoto, Yuji, Bolze, Detlef, Heinemann, Bernd, Rücker, Holger, Knoll, Dieter, Murota, Junichi, Mehr, Wolfgang

“…Atomic layer processing has been demonstrated for doping of SiGe during Reduced Pressure Chemical Vapour Deposition (RPCVD) in a commercial single wafer…”
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IHP SiGe:C BiCMOS Technologies as a Suitable Backup Solution for the ATLAS Upgrade Front-End Electronics by Diez, S., Lozano, M., Pellegrini, G., Mandic, I., Knoll, D., Heinemann, B., Ullan, M.

“…In this study we present the results of radiation hardness studies performed on three different SiGe:C BiCMOS technologies from Innovation for High Performance…”
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A monolithically integrated silicon modulator with a 10 Gb/s 5 Vpp or 5.6 Vpp driver in 0.25 μm SiGe:C BiCMOS by Goll, Bernhard, Thomson, David J., Zimmermann, Lars, Porte, Henri, Gardes, Frederic Y., Hu, Youfang, Knoll, Dieter, Lischke, Stefan, Tillack, Bernd, Reed, Graham T., Zimmermann, Horst

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A 0.13 [Formula Omitted] SiGe BiCMOS Technology Featuring f[Formula Omitted]/f[Formula Omitted] of 240/330 GHz and Gate Delays Below 3 ps by Rucker, Holger, Heinemann, Bernd, Winkler, Wolfgang, Barth, R, Borngraber, J, Drews, J, Fischer, Gerhard G, Fox, Alexander, Grabolla, Thomas, Haak, U, Knoll, Dieter, Korndorfer, Falk, Mai, Andreas, Marschmeyer, Steffen, Schley, P, Schmidt, D, Schmidt, J, Schubert, Markus Andreas, Schulz, K, Tillack, Bernd, Wolansky, D, Yamamoto, Yuji

“…A 0.13 [Formula Omitted] SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit…”
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A 0.13 mu hbox m SiGe BiCMOS Technology Featuring f T /f max of 240/330 GHz and Gate Delays Below 3 ps by Rucker, Holger, Heinemann, Bernd, Winkler, Wolfgang, Barth, R, Borngraber, J, Drews, J, Fischer, Gerhard G, Fox, Alexander, Grabolla, Thomas, Haak, U, Knoll, Dieter, Korndorfer, Falk, Mai, Andreas, Marschmeyer, Steffen, Schley, P, Schmidt, D, Schmidt, J, Schubert, Markus Andreas, Schulz, K, Tillack, Bernd, Wolansky, D, Yamamoto, Yuji

“…A 0.13 mu hbox m SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies f…”
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A 0.13 \mu} SiGe BiCMOS Technology Featuring f /f of 240/330 GHz and Gate Delays Below 3 ps by Rücker, Holger, Heinemann, Bernd, Winkler, Wolfgang, Barth, R, Borngraber, J, Drews, J, Fischer, Gerhard G, Fox, Alexander, Grabolla, Thomas, Haak, U, Knoll, Dieter, Korndörfer, Falk, Mai, Andreas, Marschmeyer, Steffen, Schley, P, Schmidt, D, Schmidt, J, Schubert, Markus Andreas, Schulz, K, Tillack, Bernd, Wolansky, D, Yamamoto, Yuji

“…A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies f T of…”
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