Search Results - "KLIK, M"

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  1. 1

    Supervised Enhancement Filters: Application to Fissure Detection in Chest CT Scans by van Rikxoort, E.M., van Ginneken, B., Klik, M., Prokop, M.

    Published in IEEE transactions on medical imaging (01-01-2008)
    “…In medical image processing, many filters have been developed to enhance certain structures in 3-D data. In this paper, we propose to use pattern recognition…”
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    Journal Article
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    Donor-state-enabling Er-related luminescence in silicon: direct identification and resonant excitation by Izeddin, I, Klik, M A J, Vinh, N Q, Bresler, M S, Gregorkiewicz, T

    Published in Physical review letters (17-08-2007)
    “…We conclusively establish a direct link between formation of an Er-related donor gap state and the 1.5 microm emission of Er in Si. The experiment is performed…”
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    Journal Article
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    Optically induced deexcitation of rare-Earth ions in a semiconductor matrix by Klik, M A J, Gregorkiewicz, T, Bradley, I V, Wells, J-P R

    Published in Physical review letters (25-11-2002)
    “…We report on verification of the proposed energy transfer mechanism responsible for photoluminescence of rare earth (RE) ions in semiconductors. Using…”
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    Journal Article
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    Excitation paths in RE-doped III–V semiconductors by Klik, M.A.J, Izeddin, I, Phillips, J, Gregorkiewicz, T

    “…Optical properties of III–V compound semiconductors are frequently engineered by doping with RE ions. In that way narrow emission bands with a…”
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    Journal Article
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    Time-resolved photoluminescence study of Si [formula omitted]Ag by Vinh, N.Q., Klik, M.A.J., Gregorkiewicz, T.

    Published in Physica. B, Condensed matter (01-12-2001)
    “…Photoluminescence band at 780 meV , previously assigned to silver-related centers in Si on basis of indirect arguments, is investigated in detail. For that…”
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    Journal Article
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    Spectroscopic characterization of Er-1 center in selectively doped silicon by Vinh, N.Q., Klik, M., Andreev, B.A., Gregorkiewicz, T.

    “…We report on investigation of Er-related optically excited emission from selectively doped Si/Si:Er nanolayer structures grown by sublimation MBE method…”
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    Journal Article
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    An experimental verification of the theory of surface roughening from a quantitative STM study by Hoogeman, M.S., Klik, M.A.J., Schlößer, D.C., Kuipers, L., Frenken, J.W.M.

    Published in Surface science (10-03-2000)
    “…The roughening transition on the vicinal Ag(115) surface is investigated by variable-temperature STM. We make use of pattern recognition on the STM images to…”
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    Journal Article
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    The step distance dependence of the kink creation energy determined on vicinal silver surfaces by Chang, M.F., Hoogeman, M.S., Klik, M.A.J., Frenken, J.W.M.

    Published in Surface science (09-07-1999)
    “…Using a statistical analysis of high-speed scanning tunneling microscopy movies, we determine the formation energy of kinks in the steps on Ag(113) to be W…”
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    Journal Article
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    Free-electron laser studies of energy transfer mechanisms in semiconductors doped with transition series ions by Forcales, M., Klik, M., Vinh, N.Q., Bradley, I.V., Wells, J-P.R., Gregorkiewicz, T.

    Published in Journal of luminescence (01-12-2001)
    “…Shallow levels determine electrical and optical properties of semiconductors. Mid-infrared radiation from a free-electron laser can be used for an effective…”
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    Journal Article Conference Proceeding
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    Terahertz modulation of the blue photoluminescence in ZnSe by Klik, M. A. J., Gregorkiewicz, T., Yassievich, I. N., Ivanov, V. Yu, Godlewski, M.

    “…We report on effective optical modulation of blue PL in ZnSe with a powerful pulse from a free-electron laser operating in the THz range. A 30% resonant…”
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    Journal Article
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    Mid-infrared spectroscopy of the Er-related donor state in Si/Si:Er nanolayers by Izeddin, I, Klik, J, Vinh, N Q, Bresler, M S, Gregorkiewicz, T

    “…We present experimental evidence on the donor level related to optical properties of the Er3+ ion in crystalline silicon. Using two-color spectroscopy with a…”
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    Journal Article
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    Photoluminescence quenching in InP:Yb with a free-electron laser by Klik, M.A.J., Wells, J.-P.R., Gregorkiewicz, T.

    Published in Applied surface science (15-03-2003)
    “…We have studied photoluminescence (PL) from Yb 3+ ions in InP, which is observed after a band-to-band excitation with a Nd:YAG laser. Upon irradiation of this…”
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    Journal Article
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    Photoluminescence excitation spectroscopy of erbium in epitaxially grown Si:Er structures by Yablonskiy, A.N., Klik, M.A.J., Andreev, B.A., Kuznetsov, V.P., Krasilnik, Z.F., Gregorkiewicz, T.

    Published in Optical materials (01-02-2005)
    “…Excitation of erbium photoluminescence in Si:Er epitaxial structures has been studied within a broad pump wavelength range ( λ ex = 780–1500 nm). In all the…”
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    Journal Article
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    Excitation of Si : Er with sub-band-gap energies by Klik, M.A.J., Gregorkiewicz, T.

    Published in Physica. B, Condensed matter (01-12-2001)
    “…We have performed photoluminescence excitation spectroscopy on molecular beam epitaxy grown Si : Er with a high-power near-infrared laser pulse. It was found…”
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    Journal Article
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