Search Results - "KLEINE, J. S"

  • Showing 1 - 5 results of 5
Refine Results
  1. 1

    Characterization of a GaAs/AlGaAs modulation-doped dynamic random access memory cell by KLEINE, J. S, COOPER, J. A, MELLOCH, M. R

    Published in Applied physics letters (17-08-1992)
    “…We report the electrical properties of a GaAs dynamic random access memory (DRAM) cell in which the storage capacitor is a modulation-doped heterojunction and…”
    Get full text
    Journal Article
  2. 2

    Electron emission from direct bandgap heterojunction capacitors by Kleine, J.S., Qian, Q.D., Cooper, J.A., Melloch, M.R.

    Published in IEEE transactions on electron devices (01-02-1989)
    “…The rate of emission of electrons from an inversion layer at the interface between p-type GaAs and undoped Al/sub x/Ga/sub 1-x/As (x=0.38) is measured using a…”
    Get full text
    Journal Article
  3. 3

    Electrical characterization of GaAs PiN junction diodes grown in trenches by atomic layer epitaxy by NEUDECK, P. G, KLEINE, J. S, SHEPPARD, S. T, MCDERMOTT, B. T, BEDAIR, S. M, COOPER, J. A, MELLOCH, M. R

    Published in Applied physics letters (07-01-1991)
    “…We report the electrical characterization of GaAs PiN junction diodes grown over the sidewalls of patterned trenches by atomic layer epitaxy. The diodes…”
    Get full text
    Journal Article
  4. 4
  5. 5

    Effect of Al mole fraction on electron emission at the Al x Ga1− x As/GaAs interface by Kleine, J. S., Melloch, M. R., Cooper, J. A.

    Published in Applied physics letters (16-10-1989)
    “…We report the first direct measurement of electron storage time at the AlxGa1−xAs/GaAs interface as a function of Al mole fraction x. Storage capacitors with…”
    Get full text
    Journal Article