Search Results - "KLEINE, J. S"
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Characterization of a GaAs/AlGaAs modulation-doped dynamic random access memory cell
Published in Applied physics letters (17-08-1992)“…We report the electrical properties of a GaAs dynamic random access memory (DRAM) cell in which the storage capacitor is a modulation-doped heterojunction and…”
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Electron emission from direct bandgap heterojunction capacitors
Published in IEEE transactions on electron devices (01-02-1989)“…The rate of emission of electrons from an inversion layer at the interface between p-type GaAs and undoped Al/sub x/Ga/sub 1-x/As (x=0.38) is measured using a…”
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Electrical characterization of GaAs PiN junction diodes grown in trenches by atomic layer epitaxy
Published in Applied physics letters (07-01-1991)“…We report the electrical characterization of GaAs PiN junction diodes grown over the sidewalls of patterned trenches by atomic layer epitaxy. The diodes…”
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Effect of Al mole fraction on electron emission at the AlxGa1-xAs/GaAs interface
Published in Applied physics letters (16-10-1989)Get full text
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Effect of Al mole fraction on electron emission at the Al x Ga1− x As/GaAs interface
Published in Applied physics letters (16-10-1989)“…We report the first direct measurement of electron storage time at the AlxGa1−xAs/GaAs interface as a function of Al mole fraction x. Storage capacitors with…”
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