Search Results - "KIRCHNER, K. W"
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GaN Power Schottky Diodes with Drift Layers Grown on Four Substrates
Published in Journal of electronic materials (01-04-2014)“…We have examined the performance of gallium nitride (GaN) high-power Schottky diodes fabricated on unintentionally doped (UID) metalorganic chemical vapor…”
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Growth of GaN films on PLD-deposited TaC substrates
Published in Journal of crystal growth (15-09-2010)“…GaN films were grown by metal organic chemical vapor deposition on TaC substrates that were created by pulsed laser deposition of TaC onto (0 0 0 1) SiC…”
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3
Structural and Chemical Comparison of Graphite and BN/AlN Caps Used for Annealing Ion Implanted SiC
Published in Journal of electronic materials (01-06-2008)“…The effectiveness of AlN/BN and graphite annealing caps for ion implanted SiC was examined morphologically, structurally, chemically, and electrically. The…”
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4
Alkoxy sol-gel derived Y3−xAl5O12:Tbx thin films as efficient cathodoluminescent phosphors
Published in Applied physics letters (11-06-2001)“…Thin-film Y3−xAl5O12:Tbx3+ (YAG:Tb) phosphor derived from a sol-gel chemistry is analyzed by x-ray diffraction, scanning electron microscopy, photoluminescence…”
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5
A comparison of graphite and AlN caps used for annealing ion-implanted SiC
Published in Journal of electronic materials (01-06-2002)“…The SiC wafers implanted with Al were capped with AlN, C, or AlN and C and were annealed at temperatures as high as 1700 degree C to examine their ability to…”
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Cathodoluminescence study of novel sol-gel derived Y3-xAl5O12:Tbx phosphors
Published in Journal of luminescence (01-06-2001)Get full text
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7
Annealing ion implanted SiC with an AlN cap
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30-07-1999)“…An AlN cap was used to try to prevent the preferential evaporation of Si during the high temperature anneals required to activate N implanted into a SiC…”
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The properties of annealed AlN films deposited by pulsed laser deposition
Published in Journal of electronic materials (01-03-2000)“…AlN films deposited on SiC or sapphire substrates by pulsed laser deposition were annealed at 1200 degree C, 1400 degree C, and 1600 degree C for 30 min in an…”
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9
High critical current density in epitaxial HgBa2CaCu2OX thin films
Published in Applied physics letters (16-11-1998)“…High quality superconducting HgBa2CaCu2Ox (Hg-1212) thin films have been reproducibly fabricated using cation-exchange method. The thin films have pure Hg-1212…”
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10
Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC
Published in Solid-state electronics (01-02-2003)“…A dual BN/AlN capping layer has been developed for annealing implanted SiC up to a temperature of at least 1700 °C. The AlN is used as a protective layer on…”
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11
Psychological test differences between industrial salesmen and retail salesmen
Published in Journal of applied psychology (01-04-1960)“…How does the prediction of success in selling vary according to the type of selling done? Using a Sales Job Description Checklist, 50 retail salesmen and 70…”
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Fabrication and physical properties of very thin HgBa2CaCu2O6+δ films
Published in Physica. C, Superconductivity (01-11-2000)Get full text
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13
A note on the relationship between age and sales effectiveness
Published in Journal of applied psychology (01-04-1960)“…Manager's rankings of 539 salesmen converted into a stanine distribution and compared with chronological age showed that sales effectiveness increases until…”
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The attitudes of special groups toward the employment of older persons
Published in Journal of gerontology (Kirkwood) (01-04-1957)Get more information
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15
Copper/solder intermetallic growth studies
Published in Microscopy research and technique (01-08-1993)“…Copper samples, hot solder (eutectic) dipped and thermally aged, were cross-sectioned and placed in an environmental scanning electronic microscope (ESEM)…”
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Structural and Chemical Comparison of Graphite and BN/AIN Caps Used for Annealing Ion Implanted SiC
Published in Journal of electronic materials (01-06-2008)“…The effectiveness of AlN/BN and graphite annealing caps for ion implanted SiC was examined morphologically, structurally, chemically, and electrically. The…”
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17
A comparison of the AlN annealing cap for 4H–SiC annealed in nitrogen versus argon atmosphere
Published in Solid-state electronics (01-10-2004)“…AlN deposited on 4H–SiC by pulsed laser deposition (PLD) did not noticeably deteriorate when it was annealed in an Ar atmosphere at 1500 °C for 30 min, but it…”
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18
Correlation of materials and ferroelectric properties of sputtered and sol-gel PZT films
Published in 2009 18th IEEE International Symposium on the Applications of Ferroelectrics (01-08-2009)“…The processes for the physical vapor deposition (PVD) of Pb(Zr,Ti)O 3 (PZT) thin films from two different composite oxide targets has been demonstrated. PZT…”
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Conference Proceeding -
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Alkoxy sol-gel derived Y{sub 3{minus}x}Al{sub 5}O{sub 12}:Tb{sub x} thin films as efficient cathodoluminescent phosphors
Published in Applied physics letters (11-06-2001)“…Thin-film Y{sub 3{minus}x}Al{sub 5}O{sub 12}:Tb{sub x}{sup 3+} (YAG:Tb) phosphor derived from a sol-gel chemistry is analyzed by x-ray diffraction, scanning…”
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A note on the effect of privacy in taking typing tests
Published in Journal of applied psychology (01-10-1966)“…80 female job applicants completed a standard typing test as part of a regular job-selection procedure. Of these, 40 were tested individually, 40 in groups of…”
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