Search Results - "KIRCHNER, K. W"

Refine Results
  1. 1

    GaN Power Schottky Diodes with Drift Layers Grown on Four Substrates by Tompkins, R. P., Smith, J. R., Kirchner, K. W., Jones, K. A., Leach, J. H., Udwary, K., Preble, E., Suvarna, P., Leathersich, J.M., Shahedipour-Sandvik, F.

    Published in Journal of electronic materials (01-04-2014)
    “…We have examined the performance of gallium nitride (GaN) high-power Schottky diodes fabricated on unintentionally doped (UID) metalorganic chemical vapor…”
    Get full text
    Journal Article Conference Proceeding
  2. 2

    Growth of GaN films on PLD-deposited TaC substrates by Kirchner, K.W., Derenge, M.A., Zheleva, T.S., Vispute, R.D., Jones, K.A.

    Published in Journal of crystal growth (15-09-2010)
    “…GaN films were grown by metal organic chemical vapor deposition on TaC substrates that were created by pulsed laser deposition of TaC onto (0 0 0 1) SiC…”
    Get full text
    Journal Article
  3. 3

    Structural and Chemical Comparison of Graphite and BN/AlN Caps Used for Annealing Ion Implanted SiC by Jones, K.A., Wood, M.C., Zheleva, T.S., Kirchner, K.W., Derenge, M.A., Bolonikov, A., Sudarshan, T.S., Vispute, R.D., Hullavarad, S.S., Dhar, S.

    Published in Journal of electronic materials (01-06-2008)
    “…The effectiveness of AlN/BN and graphite annealing caps for ion implanted SiC was examined morphologically, structurally, chemically, and electrically. The…”
    Get full text
    Journal Article
  4. 4

    Alkoxy sol-gel derived Y3−xAl5O12:Tbx thin films as efficient cathodoluminescent phosphors by Choe, Jae Young, Ravichandran, D., Blomquist, S. M., Morton, D. C., Kirchner, K. W., Ervin, M. H., Lee, Unchul

    Published in Applied physics letters (11-06-2001)
    “…Thin-film Y3−xAl5O12:Tbx3+ (YAG:Tb) phosphor derived from a sol-gel chemistry is analyzed by x-ray diffraction, scanning electron microscopy, photoluminescence…”
    Get full text
    Journal Article
  5. 5

    A comparison of graphite and AlN caps used for annealing ion-implanted SiC by JONES, K. A, DERENGE, M. A, VISPUTE, R. D, SHAH, P. B, ZHELEVA, T. S, ERVIN, M. H, KIRCHNER, K. W, WOOD, M. C, THOMAS, C, SPENCER, M. G, HOLLAND, O. W

    Published in Journal of electronic materials (01-06-2002)
    “…The SiC wafers implanted with Al were capped with AlN, C, or AlN and C and were annealed at temperatures as high as 1700 degree C to examine their ability to…”
    Get full text
    Journal Article
  6. 6
  7. 7

    Annealing ion implanted SiC with an AlN cap by Jones, K.A, Shah, P.B, Kirchner, K.W, Lareau, R.T, Wood, M.C, Ervin, M.H, Vispute, R.D, Sharma, R.P, Venkatesan, T, Holland, O.W

    “…An AlN cap was used to try to prevent the preferential evaporation of Si during the high temperature anneals required to activate N implanted into a SiC…”
    Get full text
    Journal Article Conference Proceeding
  8. 8

    The properties of annealed AlN films deposited by pulsed laser deposition by Jones, K. A., Derenge, M. A., Zheleva, T. S., Kirchner, K. W., Ervin, M. H., Wood, M. C., Vispute, R. D., Sharma, R. P., Venkatesan, T.

    Published in Journal of electronic materials (01-03-2000)
    “…AlN films deposited on SiC or sapphire substrates by pulsed laser deposition were annealed at 1200 degree C, 1400 degree C, and 1600 degree C for 30 min in an…”
    Get full text
    Journal Article
  9. 9

    High critical current density in epitaxial HgBa2CaCu2OX thin films by Yan, S. L., Xie, Y. Y., Wu, J. Z., Aytug, T., Gapud, A. A., Kang, B. W., Fang, L., He, M., Tidrow, S. C., Kirchner, K. W., Liu, J. R., Chu, W. K.

    Published in Applied physics letters (16-11-1998)
    “…High quality superconducting HgBa2CaCu2Ox (Hg-1212) thin films have been reproducibly fabricated using cation-exchange method. The thin films have pure Hg-1212…”
    Get full text
    Journal Article
  10. 10

    Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC by Ruppalt, L.B., Stafford, S., Yuan, D., Jones, K.A., Ervin, M.H., Kirchner, K.W., Zheleva, T.S., Wood, M.C., Geil, B.R., Forsythe, E., Vispute, R.D., Venkatesan, T.

    Published in Solid-state electronics (01-02-2003)
    “…A dual BN/AlN capping layer has been developed for annealing implanted SiC up to a temperature of at least 1700 °C. The AlN is used as a protective layer on…”
    Get full text
    Journal Article
  11. 11

    Psychological test differences between industrial salesmen and retail salesmen by Dunnette, M. D, Kirchner, W. K

    Published in Journal of applied psychology (01-04-1960)
    “…How does the prediction of success in selling vary according to the type of selling done? Using a Sales Job Description Checklist, 50 retail salesmen and 70…”
    Get full text
    Journal Article
  12. 12
  13. 13

    A note on the relationship between age and sales effectiveness by Kirchner, W. K, McElwain, C. S, Dunnette, M. D

    Published in Journal of applied psychology (01-04-1960)
    “…Manager's rankings of 539 salesmen converted into a stanine distribution and compared with chronological age showed that sales effectiveness increases until…”
    Get full text
    Journal Article
  14. 14
  15. 15

    Copper/solder intermetallic growth studies by Kirchner, K W, Lucey, G K, Geis, J

    Published in Microscopy research and technique (01-08-1993)
    “…Copper samples, hot solder (eutectic) dipped and thermally aged, were cross-sectioned and placed in an environmental scanning electronic microscope (ESEM)…”
    Get more information
    Journal Article
  16. 16

    Structural and Chemical Comparison of Graphite and BN/AIN Caps Used for Annealing Ion Implanted SiC by Jones, KA, Wood, M C, Zheleva, T S, Kirchner, K W, Derenge, M A, Bolonikov, A, Sudarshan, T S, Vispute, R D, Hullavarad, S S, Dhar, S

    Published in Journal of electronic materials (01-06-2008)
    “…The effectiveness of AlN/BN and graphite annealing caps for ion implanted SiC was examined morphologically, structurally, chemically, and electrically. The…”
    Get full text
    Journal Article
  17. 17

    A comparison of the AlN annealing cap for 4H–SiC annealed in nitrogen versus argon atmosphere by Derenge, M.A., Jones, K.A., Kirchner, K.W., Ervin, M.H., Zheleva, T.S., Hullavarad, S., Vispute, R.D.

    Published in Solid-state electronics (01-10-2004)
    “…AlN deposited on 4H–SiC by pulsed laser deposition (PLD) did not noticeably deteriorate when it was annealed in an Ar atmosphere at 1500 °C for 30 min, but it…”
    Get full text
    Journal Article
  18. 18

    Correlation of materials and ferroelectric properties of sputtered and sol-gel PZT films by Fu, R.X., Mamazza, R., Zheleva, T.S., Kirchner, K.W., Piekarski, B.H.

    “…The processes for the physical vapor deposition (PVD) of Pb(Zr,Ti)O 3 (PZT) thin films from two different composite oxide targets has been demonstrated. PZT…”
    Get full text
    Conference Proceeding
  19. 19

    Alkoxy sol-gel derived Y{sub 3{minus}x}Al{sub 5}O{sub 12}:Tb{sub x} thin films as efficient cathodoluminescent phosphors by Choe, Jae Young, Ravichandran, D., Blomquist, S. M., Morton, D. C., Kirchner, K. W., Ervin, M. H., Lee, Unchul

    Published in Applied physics letters (11-06-2001)
    “…Thin-film Y{sub 3{minus}x}Al{sub 5}O{sub 12}:Tb{sub x}{sup 3+} (YAG:Tb) phosphor derived from a sol-gel chemistry is analyzed by x-ray diffraction, scanning…”
    Get full text
    Journal Article
  20. 20

    A note on the effect of privacy in taking typing tests by Kirchner, Wayne K

    Published in Journal of applied psychology (01-10-1966)
    “…80 female job applicants completed a standard typing test as part of a regular job-selection procedure. Of these, 40 were tested individually, 40 in groups of…”
    Get full text
    Journal Article