Search Results - "KINGON, A. I"

Direct studies of domain switching dynamics in thin film ferroelectric capacitors by Gruverman, A., Rodriguez, B. J., Dehoff, C., Waldrep, J. D., Kingon, A. I., Nemanich, R. J., Cross, J. S.

“…An experimental approach for direct studies of the polarization reversal mechanism in thin film ferroelectric capacitors based on piezoresponse force…”
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Mechanical stress effect on imprint behavior of integrated ferroelectric capacitors by Gruverman, A., Rodriguez, B. J., Kingon, A. I., Nemanich, R. J., Tagantsev, A. K., Cross, J. S., Tsukada, M.

“…Stress-induced changes in the imprint and switching behavior of (111)-oriented Pb(Zr,Ti)O3 (PZT)-based capacitors have been studied using piezoresponse force…”
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Temperature and thickness dependent permittivity of (Ba,Sr)TiO3 thin films by Parker, C. B., Maria, J.-P., Kingon, A. I.

“…The temperature and thickness dependence of permittivity of (Ba,Sr)TiO3 has been investigated. The films were deposited by liquid-source metalorganic chemical…”
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Electrophoretic Deposition of Lead Zirconate Titanate Films on Metal Foils for Embedded Components by Wu, Aiying, Vilarinho, P. M., Kingon, A. I.

“…Lead zirconate titanate (PZT) thick films in the thickness range of 5–200 μm on 20 μm copper and 25 μm platinum foils were prepared by electrophoretic…”
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Tunable high-quality-factor interdigitated (Ba, Sr)TiO3 capacitors fabricated on low-cost substrates with copper metallization by GHOSH, Dipankar, LAUGHLIN, B, NATH, J, KINGON, A. I, STEER, M. B, MARIA, J.-P

“…Interdigitated capacitors containing the field-tunable ferroelectric Ba0DDT75Sr0DDT25TiO3, polycrystalline alumina substrates, and copper metallization have…”
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Crystallization in SiO2–metal Oxide Alloys by Maria, J-P., Wickaksana, D., Parrette, J., Kingon, A. I.

“…HfO2–SiO2 and La2O3–SiO2 amorphous alloys were prepared, and their crystallization behavior was studied. The results suggest that higher permittivities can be…”
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Microstructural studies of PZT thick films on Cu foils by Wu, Aiying, Vilarinho, P.M., Srinivasan, S., Kingon, A.I., Reaney, I.M., Woodward, D., Ramos, A.R., Alves, E.

“…This paper explains the limits of processing conditions for Pb(Zr, Ti)O 3 (PZT) thick films on Cu substrates. PZT thick films in the thickness range 5–20 μm…”
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Structure and stability of La2O3/SiO2 layers on Si(001) by Stemmer, S., Maria, J.-P., Kingon, A. I.

“…High-resolution transmission electron microscopy and electron energy-loss spectroscopy (EELS) were used to investigate La2O3/SiO2/Si structures. The La2O3…”
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Spatial inhomogeneity of imprint and switching behavior in ferroelectric capacitors by Gruverman, A., Rodriguez, B. J., Kingon, A. I., Nemanich, R. J., Cross, J. S., Tsukada, M.

“…Piezoresponse force microscopy has been used to perform nanoscale characterization of the spatial variations in the imprint and switching behavior of…”
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Piezoresponse force microscopy for polarity imaging of GaN by Rodriguez, B. J., Gruverman, A., Kingon, A. I., Nemanich, R. J., Ambacher, O.

“…The polarity distribution of GaN based lateral polarity heterostructures is investigated by piezoresponse force microscopy (PFM). Simultaneous imaging of…”
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Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials by Rodriguez, B.J, Gruverman, A, Kingon, A.I, Nemanich, R.J

“…Piezoelectric constants and polarity distributions of epitaxial AlN and GaN thin films are investigated by piezoresponse force microscopy (PFM). The magnitude…”
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Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning by Kirsch, P. D., Sivasubramani, P., Huang, J., Young, C. D., Quevedo-Lopez, M. A., Wen, H. C., Alshareef, H., Choi, K., Park, C. S., Freeman, K., Hussain, M. M., Bersuker, G., Harris, H. R., Majhi, P., Choi, R., Lysaght, P., Lee, B. H., Tseng, H.-H., Jammy, R., Böscke, T. S., Lichtenwalner, D. J., Jur, J. S., Kingon, A. I.

“…An interface dipole model explaining threshold voltage (Vt) tuning in HfSiON gated n-channel field effect transistors (nFETs) is proposed. Vt tuning depends on…”
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Work function engineering using lanthanum oxide interfacial layers by Alshareef, H. N., Quevedo-Lopez, M., Wen, H. C., Harris, R., Kirsch, P., Majhi, P., Lee, B. H., Jammy, R., Lichtenwalner, D. J., Jur, J. S., Kingon, A. I.

“…A La 2 O 3 capping scheme has been developed to obtain n -type band-edge metal gates on Hf-based gate dielectrics. The viability of the technique is…”
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Investigation of the mechanism of polarization switching in ferroelectric capacitors by three-dimensional piezoresponse force microscopy by RODRIGUEZ, B. J, GRUVERMAN, A, KINGON, A. I, NEMANICH, R. J, CROSS, J. S

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Resolution of the transfer direction of field-evaporated gold atoms for nanofabrication and microelectromechanical system applications by Yang, Z., Hoffmann, S., Lichtenwalner, D. J., Krim, J., Kingon, A. I.

“…Field evaporation is an important phenomenon utilized in probe-based nanofabrication as well as a potential factor in contact reliability of…”
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Studies of hydrogen-induced degradation processes in SrBi2Ta2O9 ferroelectric film-based capacitors by Im, J., Auciello, O., Krauss, A. R., Gruen, D. M., Chang, R. P. H., Kim, S. H., Kingon, A. I.

“…It is known that the forming gas (N2–H2 mixture) annealing process required for microcircuit fabrication results in an unacceptable electrical degradation of…”
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Alternative dielectrics to silicon dioxide for memory and logic devices by Kingon, Angus I, Maria, Jon-Paul, Streiffer, S. K

“…The silicon-based microelectronics industry is rapidly approaching a point where device fabrication can no longer be simply scaled to progressively smaller…”
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High temperature stability of lanthanum silicate dielectric on Si (001) by Jur, J. S., Lichtenwalner, D. J., Kingon, A. I.

“…Integration of a high- κ dielectric into complementary metal-oxide-semiconductor devices requires thermal stability of the amorphous dielectric phase and…”
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An electronically tunable microstrip bandpass filter using thin-film Barium-Strontium-Titanate (BST) varactors by Nath, J., Ghosh, D., Maria, J.-P., Kingon, A.I., Fathelbab, W., Franzon, P.D., Steer, M.B.

“…A tunable third-order combline bandpass filter using thin-film barium-strontium-titanate varactors and fabricated on a sapphire substrate is reported…”
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Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9 thin film properties by Kim, Seung-Hyun, Kim, D. J., Maria, J.-P., Kingon, A. I., Streiffer, S. K., Im, J., Auciello, O., Krauss, A. R.

“…The properties of SrBi2Ta2O9 (SBT) films, such as remanent polarization and leakage current density, are closely related to the film/electrode interface and…”
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