Search Results - "KHEMKA, V"

P-278Phase Ib/II study of nivolumab plus CAPIRI: Initial results of metastatic colon cancer and pancreatic adenocarcinoma patients by Khemka, V, Haire, P, Waypa, J, Weiss, G

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Detection and optimization of temperature distribution across large-area power MOSFETs to improve energy capability by Khemka, V., Parthasarathy, V., Ronghua Zhu, Bose, A., Roggenbauer, T.

“…Temperature distribution inside a large-area reduced-surface field (RESURF) lateral double-diffused MOSFETs (LDMOSFETs) is studied with the help of experiments…”
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A floating RESURF (FRESURF) LD-MOSFET device concept by Khemka, V., Parthasarathy, V., Ronghua Zhu, Bose, A.

“…This letter reports a novel device concept, which is an extension of the conventional reduced surface field (RESURF) concept. A heavily doped n-type floating…”
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A double RESURF LDMOS with drain profile engineering for improved ESD robustness by Parthasarathy, V., Khemka, V., Zhu, R., Whitfield, J., Bose, A., Ida, R.

“…This letter reports a novel 50 V lateral power MOSFET structure that is self-protecting with respect to electrostatic discharge (ESD) strikes. This device…”
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A fully planarized 4H-SiC trench MOS barrier Schottky (TMBS) rectifier by Khemka, V., Ananthan, V., Chow, T.P.

“…A fully planarized 4H-SiC trench MOS barrier Schottky (TMBS) rectifier has been designed, fabricated and characterized for the first time. The use of a TMBS…”
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SiC and GaN bipolar power devices by Chow, T.P., Khemka, V., Fedison, J., Ramungul, N., Matocha, K., Tang, Y., Gutmann, R.J.

“…The present status of the silicon carbide and gallium nitride bipolar power semiconductor devices is reviewed. Several unipolar and bipolar figures of merit…”
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A novel technique to decouple electrical and thermal effects in SOA limitation of power LDMOSFET by Khemka, V., Parthasarathy, V., Ronghua Zhu, Bose, A.

“…This letter reports a novel technique to isolate thermal and electrical failure mechanisms in a power LDMOSFET device by deactivating the parasitic bipolar…”
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Experimental and theoretical analysis of energy capability of RESURF LDMOSFETs and its correlation with static electrical safe operating area (SOA) by Khemka, V., Parthasarathy, V., Zhu, R., Bose, A., Roggenbauer, T.

“…Thermal and electrical destruction of 55 V single and double reduced surface field (RESURF) lateral double-diffused MOSFETs (LDMOSFETs) in smart power ICs are…”
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Design considerations and experimental analysis for silicon carbide power rectifiers by Khemka, V, Patel, R, Chow, T.P, Gutmann, R.J

“…In this paper we present the investigation of properties of silicon carbide power rectifiers, in particular Schottky, PiN and advanced hybrid power rectifiers…”
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Characterization of phosphorus implantation in 4H-SiC by Khemka, V., Patel, R., Ramungul, N., Chow, T. P., Ghezzo, M., Kretchmer, J.

“…We report the characterization of phosphorus implantation in 4H-SiC. The implanted layers are characterized by analytical techniques (secondary ion mass…”
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Effect of reactive ion etch-induced damage on the performance of 4H-SiC Schottky barrier diodes by KHEMKA, V, CHOW, T. P, GUTMANN, R. J

“…The effect of reactive ion etch (RIE) induced damage on 4H-SiC surfaces etched in fluorinated plasmas has been investigated and characterized using Ni Schottky…”
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P-278 Phase Ib/II study of nivolumab plus CAPIRI: Initial results of metastatic colon cancer and pancreatic adenocarcinoma patients by Khemka, V., Haire, P., Waypa, J., Weiss, G.

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Management of locoregional stage esophageal cancer: a single center experience by Javle, M. M., Nwogu, C. E., Donohue, K. A., Iyer, R. V., Brady, W. E., Khemka, S. V., Smith, J. L., Demmy, T. L., Yang, G. Y., Nava, H. R.

“…Therapeutic options for locoregional esophageal cancer (EC) include primary surgery, neoadjuvant or definitive chemoradiation and systemic chemotherapy. The…”
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A nondestructive electrical test structure to monitor deep trench depth for automated parametric process control by Khemka, V., Roggenbauer, T., Parthasarathy, V., Puchades, I., Ronghua Zhu, Bose, A., Butner, M.

“…A novel nondestructive measurement technique is proposed to electrically monitor the depth of a trench etched in silicon for the purpose of process control in…”
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6H-SiC p/sup +/-n junctions fabricated by beryllium implantation by Ramungul, N., Khemka, V., Zheng, Y., Patel, R., Chow, T.P.

“…The use of beryllium (Be) as an alternate p-type dopant for implanted silicon carbide (SiC) p/sup +/-n junctions is experimentally demonstrated. The implanted…”
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Re-oxidation characteristics of oxynitrides on 3C- and 4H-SiC by Chatty, K., Khemka, V., Chow, T. P., Gutmann, R. J.

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39MO Phase III ENGOT-En9/LEAP-001 study: Lenvatinib + pembrolizumab (LEN/PEMBRO) vs chemotherapy (chemo) as first-line (1L) therapy for advanced or recurrent endometrial cancer by Pignata, S., Marth, C., Moore, R.G., Bidzinski, M., Ayhan, A., Pérez, M.J. Rubio, Beiner, M., Hall, M., Vulsteke, C., Braicu, I., Sonoda, K., Wu, X., Frentzas, S., Mattar, A., McKenzie, J., Yao, L., Khemka, V., Gilbert, L., Makker, V.

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An improved model of ion-implanted GaAs OPFET by Chakrabarti, P., Shrestha, N.L., Srivastava, S., Khemka, V.

“…A seminumerical model of an ion-implanted GaAs optical-field-effect-transistor (OPFET) is presented. The objective of the present work is to overcome the…”
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Static and dynamic characteristics of a 1100 V, double-implanted, planar, 4H-SiC PiN rectifier by Khemka, V., Patel, R., Ramungul, N., Chow, T.P., Gutmann, R.J.

“…Implanted, high-voltage, planar junction rectifiers in 4H-SiC are fabricated using a deep boron implanted junction along with a shallow heavily doped layer…”
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Correlation between static and dynamic SOA (energy capability) of RESURF LDMOS devices in smart power technologies by Khemka, V., Parthasarathy, V., Zhu, R., Bose, A.

“…In this paper, we demonstrate the correlation between small area device static SOA and large area device pulsed SOA for single and double RESURF LDMOS…”
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