Search Results - "KERNSTOCK, C"

Variability-Aware DTCO Flow: Projections to N3 FinFET and Nanosheet 6T SRAM by Karner, M., Rzepa, G., Baumgartner, O., Strof, G., Schanovsky, F., Mitterbauer, F., Kernstock, C., Karner, H.W., Stanojevic, Z.

“…Variability increases with downscaling, making it a vital component in the assessment of upcoming technologies. We use a variability-aware DTCO flow, which…”
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Electrophysiology and colour: a comparison of methods to evaluate inner retinal function by Kurtenbach, A., Kernstock, C., Zrenner, E., Langrová, H.

“…Purpose Several methods are routinely used in the clinic to diagnose and monitor diseases of inner retinal function. In this study, we compare four such…”
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Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies by Rzepa, G., Karner, M., Baumgartner, O., Strof, G., Schanovsky, F., Mitterbauer, F., Kernstock, C., Karner, H.W., Weckx, P., Hellings, G., Claes, D., Wu, Z., Xiang, Y., Chiarella, T., Parvais, B., Mitard, J., Franco, J., Kaczer, B., Linten, D., Stanojevic, Z.

“…Reliability and variability-aware simulations of logic cells are essential to correctly analyze and predict the performance of upcoming technologies. A…”
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Applications of optical coherence tomography (OCT) in neuro-ophthalmology by Kernstock, C, Friebe, K, Tonagel, F

“…Optical coherence tomography (OCT) has revolutionised ophthalmology. Due to modern instruments with extremely high resolution there are more and more…”
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Layout-based TCAD device model generation by Kernstock, C., Stanojevic, Z., Baumgartner, O., Karner, M.

“…In this work, a fully automated process emulation is presented. Starting from industrial standard gdsII mask files a user friendly and fast way to create TCAD…”
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Predictive physical simulation of III/V quantum-well MISFETs for logic applications by Stanojevic, Z., Karner, M., Aichhorn, M., Mitterbauer, F., Eyert, V., Kernstock, C., Kosina, H.

“…We present a simulation modeling chain for nano-scaled III/V quantum-well MISFETs. Our methods are based on physical rather than empirical modeling, which…”
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Hierarchical TCAD device simulation of FinFETs by Karner, M., Stanojevic, Z., Kernstock, C., Cheng-Karner, H. W., Baumgartner, O.

“…A framework for FinFET design studies is presented. Our physics-based modeling approach allows to accurately capture the effects of channel cross-section,…”
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Papilledema, hydrocephalus and diplopia - not a temporal but a causal connection? by Tonagel, F, Friebe, K, Wilhelm, H, Kernstock, C

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Understanding the ISPP Slope in Charge Trap Flash Memory and its Impact on 3-D NAND Scaling by Verreck, D., Arreghini, A., Schanovsky, F., Rzepa, G., Stanojevic, Z., Mitterbauer, F., Kernstock, C., Baumgartner, O., Karner, M., Van den bosch, G., Rosmeulen, M.

“…We present a physical modeling approach that explains the non-ideal ISPP slope in charge trap layer (CTL) flash memory and its impact on 3-D NAND vertical…”
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A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics by Schanovsky, F., Verreck, D., Arreghini, A., Rzepa, G., Stanojevic, Z., Kernstock, C., Baumgartner, O., Rosmeulen, M., Karner, M.

“…We present a TCAD model for the accurate description of charging kinetics of trapping layers in 3D gate-all-around VNAND SONOS devices. We build on the…”
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Quantitative 3-D Model to Explain Large Single Trap Charge Variability in Vertical NAND Memory by Verreck, D., Furnemont, A., Arreghini, A., Bastos, J.P., Schanovsky, F., Mitterbauer, F., Kernstock, C., Karner, M., Degraeve, R., den bosch, G. Van

“…We present a TCAD model that reproduces large single trap V T -shifts (>100mV) in 3-D NAND flash read current by means of targeted charge placement based on…”
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Monolithic TCAD simulation of phase-change memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) selector device by Thesberg, M., Stanojevic, Z., Baumgartner, O., Kernstock, C., Leonelli, D., Barci, M., Wang, X., Zhou, X., Jiao, H., Donadio, G.L., Garbin, D., Witters, T., Kundu, S., Hody, H., Delhougne, R., Kar, G., Karner, M.

“…Owing to the increasing interest in the commercialization of phase-change memory (PCM) devices, a number of TCAD models have been developed for their…”
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Physical modeling - A new paradigm in device simulation by Stanojevic, Z., Baumgartner, O., Mitterbauer, F., Demel, H., Kernstock, C., Karner, M., Eyert, V., France-Lanord, A., Saxe, P., Freeman, C., Wimmer, E.

“…We go far beyond classical TCAD in and create a simulation framework that is ready for devices based on contemporary and future technology nodes. We do so by…”
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New computational perspectives on scattering and transport in III/V channel materials by Stanojevic, Z., Karner, M., Mitterbauer, F., Kernstock, C.

“…A physically-grounded modeling, simulation, and parameter-extraction framework that targets design and engineering of ultra-scaled devices and next-generation…”
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Statistical poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channels by Degraeve, R., Clima, S., Putcha, V., Kaczer, B., Roussel, Ph, Linten, D., Groeseneken, G., Arreghini, A., Karner, M., Kernstock, C., Stanojevic, Z., Van den bosch, G., Van Houdt, J., Furnemont, A., Thean, A.

“…A new grain boundary model is proposed consisting of 1) a scattering part modeled by reduced mobility, independent of the microscopic details of the boundary,…”
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Simulation study on the feasibility of Si as material for ultra-scaled nanowire field-effect transistors by Stanojevic, Z., Baumgartner, O., Karner, M., Mitterbauer, F., Demel, H., Kernstock, C.

“…We present a simulation framework which allows thorough performance evaluation of ultra-scaled devices. Our simulation approach is based on the full solution…”
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Full-band modeling of mobility in p-type FinFETs by Stanojevic, Z., Baumgartner, O., Karner, M., Filipovic, La, Kernstock, C., Kosina, H.

“…We present a framework for modeling the low-field mobility of ultra-narrow Si channels such as FinFETs based on a full-band description of the electronic…”
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Full-band transport in ultra-narrow p-type Si channels: Field, orientation, strain by Stanojevic, Z., Filipovic, L., Baumgartner, O., Karner, M., Kernstock, C., Kosina, H.

“…We present a framework for modeling the low-field mobility of ultra-narrow Si channels such as nanowires or FinFETs based on a full-band description of the…”
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Phase-space solution of the subband Boltzmann transport equation for nano-scale TCAD by Stanojevic, Z., Karner, M., Baumgartner, O., Karner, H. W., Kernstock, C., Demel, H., Mitterbauer, F.

“…We present a comprehensive simulation framework for transport modeling in nano-scaled devices based on the solution of the subband Boltzmann transport equation…”
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Cell Designer - a Comprehensive TCAD-Based Framework for DTCO of Standard Logic Cells by Stanojevic, Z., Strof, G., Schanovsky, F., Steiner, K., Baumgartner, O., Kernstock, C., Karner, M.

“…We present the first practical TCAD-based work flow for design-technology co-optimization (DTCO) of standard cells. The flow consists of parametric cell layout…”
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