Search Results - "KELLOCK, Andrew J"
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12% Efficiency CuIn(Se,S)2 Photovoltaic Device Prepared Using a Hydrazine Solution Process
Published in Chemistry of materials (09-02-2010)“…Thin-film CuIn(Se,S)2 (i.e., CIS) absorbers have been solution-deposited using a hydrazine-based approach that offers the potential to significantly lower the…”
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Journal Article -
2
A High-Efficiency Solution-Deposited Thin-Film Photovoltaic Device
Published in Advanced materials (Weinheim) (02-10-2008)“…High‐quality Cu(In,Ga)Se2 (CIGS) films are deposited from hydrazine‐based solutions and are employed as absorber layers in thin‐film photovoltaic devices. The…”
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3
Optimization of CIGS-Based PV Device through Antimony Doping
Published in Chemistry of materials (26-01-2010)Get full text
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4
Antimony assisted low-temperature processing of CuIn1-xGaxSe2-ySy solar cells
Published in Thin solid films (01-11-2010)Get full text
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5
Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers
Published in Applied physics letters (17-06-2013)“…We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In…”
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6
Hydrazine-based deposition route for device-quality CIGS films
Published in Thin solid films (02-02-2009)“…A simple solution-based approach for depositing CIGS (Cu–In–Ga–Se/S) absorber layers is discussed, with an emphasis on film characterization, interfacial…”
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7
Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1−xPtx on Si substrate
Published in Applied physics letters (15-02-2010)“…This letter studies the morphological stability and specific resistivity of sub-10 nm silicide films of Ni, Ni0.95Pt0.05, and Ni0.9Pt0.1 formed on Si(100)…”
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8
Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1−xPtx silicide films
Published in Applied physics letters (20-12-2010)“…This letter reports on a process scheme to obtain highly reproducible Ni1−xPtx silicide films of 3–6 nm thickness formed on a Si(100) substrate. Such ultrathin…”
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9
Torwards marketable efficiency solution-processed kesterite and chalcopyrite photovoltaic devices
Published in 2010 35th IEEE Photovoltaic Specialists Conference (01-06-2010)“…Although CuIn 1-x GaxSe 2-y S y (CIGS) chalcopyrite and Cu 2 ZnSn(S,Se) 4 (CZTSSe) kesterite-related films offer significant potential for low-cost…”
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Conference Proceeding -
10
Adhesion of Polymer Interfaces Reinforced with Random and Diblock Copolymers as a Function of Geometry
Published in Macromolecules (21-09-1999)“…The reinforcement effect of a thin layer of random copolymer at the interface between immiscible homopolymers was studied using an asymmetric double cantilever…”
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11
Effect of N doping on structure and properties of DLC films produced by plasma beam deposition
Published in IEEE transactions on magnetics (01-07-2001)“…A novel plasma beam source for the deposition of DLC films is described. Wide ranges of ion energy (130-250 eV) and C/sub 2/H/sub 2//N/sub 2/ flow conditions…”
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Journal Article Conference Proceeding -
12
Antimony assisted low-temperature processing of CuIn1axGaxSe2aySy solar cells
Published in Thin solid films (01-11-2010)“…Application of the Sb-doping method to low-temperature (a[control][curren]400AC) processing of CuIn1axGaxSe2aySy (CIGS) solar cells is explored, using a…”
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13
Antimony assisted low-temperature processing of CuIn 1 − x Ga xSe 2 − y S y solar cells
Published in Thin solid films (2010)“…Application of the Sb-doping method to low-temperature (≤ 400 °C) processing of CuIn 1 − x Ga xSe 2 − y S y (CIGS) solar cells is explored, using a…”
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Journal Article -
14
Exploitation of a self-limiting process for reproducible formationof ultrathin Ni 1 − x Pt x silicide films
Published in Applied physics letters (21-12-2010)“…This letter reports on a process scheme to obtain highly reproducible Ni 1 − x Pt x silicide films of 3-6 nm thickness formed on a Si(100) substrate. Such…”
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Journal Article -
15
Morphological stability and specific resistivity of sub-10 nm silicide films of Ni 1 − x Pt x on Si substrate
Published in Applied physics letters (19-02-2010)“…This letter studies the morphological stability and specific resistivity of sub-10 nm silicide films of Ni, Ni 0.95 Pt 0.05 , and Ni 0.9 Pt 0.1 formed on…”
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Journal Article -
16
Exploitation of a self-limiting process for reproducible formation of ultrathin Ni 1−x Pt x silicide films
Published in Applied physics letters (2010)“…This letter reports on a process scheme to obtain highly reproducible Ni 1−x Pt x silicide films of 3–6 nm thickness formed on a Si(100) substrate. Such…”
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Journal Article -
17
Exploitation of a self-limiting process for reproducible formation of ultrathin Ni{sub 1-x}Pt{sub x} silicide films
Published in Applied physics letters (20-12-2010)“…This letter reports on a process scheme to obtain highly reproducible Ni{sub 1-x}Pt{sub x} silicide films of 3-6 nm thickness formed on a Si(100) substrate…”
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Journal Article -
18
Morphological stability and specific resistivity of sub-10 nm silicide films of Ni[sub 1 - x]Pt[sub x] on Si substrate
Published in Applied physics letters (2010)“…This letter studies the morphological stability and specific resistivity of sub-10 nm silicide films of Ni, Ni 0.95 Pt 0.05 , and Ni 0.9 Pt 0.1 formed on…”
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Journal Article -
19
Microstructure and properties of ultrathin amorphous silicon nitride protective coating
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-11-2003)“…The effect of N content on the structure and properties of rf reactively sputtered amorphous silicon nitride (a- SiN x ) has been studied by Rutherford…”
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Journal Article -
20
Track width definition of giant magnetoresistive sensors by ion irradiation
Published in IEEE transactions on magnetics (01-07-2001)“…We describe the concept of using irradiation with light energetic ions in conjunction with a mask to define the edges of giant magnetoresistive sensors without…”
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Journal Article Conference Proceeding