Search Results - "KELLOCK, Andrew J"

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    12% Efficiency CuIn(Se,S)2 Photovoltaic Device Prepared Using a Hydrazine Solution Process by Liu, Wei, Mitzi, David B, Yuan, Min, Kellock, Andrew J, Chey, S. Jay, Gunawan, Oki

    Published in Chemistry of materials (09-02-2010)
    “…Thin-film CuIn(Se,S)2 (i.e., CIS) absorbers have been solution-deposited using a hydrazine-based approach that offers the potential to significantly lower the…”
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    Journal Article
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    A High-Efficiency Solution-Deposited Thin-Film Photovoltaic Device by Mitzi, David B., Yuan, Min, Liu, Wei, Kellock, Andrew J., Chey, S. Jay, Deline, Vaughn, Schrott, Alex G.

    Published in Advanced materials (Weinheim) (02-10-2008)
    “…High‐quality Cu(In,Ga)Se2 (CIGS) films are deposited from hydrazine‐based solutions and are employed as absorber layers in thin‐film photovoltaic devices. The…”
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    Journal Article
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    Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers by Sinha, Jaivardhan, Hayashi, Masamitsu, Kellock, Andrew J., Fukami, Shunsuke, Yamanouchi, Michihiko, Sato, Hideo, Ikeda, Shoji, Mitani, Seiji, Yang, See-hun, Parkin, Stuart S. P., Ohno, Hideo

    Published in Applied physics letters (17-06-2013)
    “…We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In…”
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    Journal Article
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    Hydrazine-based deposition route for device-quality CIGS films by Mitzi, David B., Yuan, Min, Liu, Wei, Kellock, Andrew J., Chey, S. Jay, Gignac, Lynne, Schrott, Alex G.

    Published in Thin solid films (02-02-2009)
    “…A simple solution-based approach for depositing CIGS (Cu–In–Ga–Se/S) absorber layers is discussed, with an emphasis on film characterization, interfacial…”
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    Journal Article
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    Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1−xPtx on Si substrate by Zhang, Zhen, Zhang, Shi-Li, Yang, Bin, Zhu, Yu, Rossnagel, Stephen M., Gaudet, Simon, Kellock, Andrew J., Jordan-Sweet, Jean, Lavoie, Christian

    Published in Applied physics letters (15-02-2010)
    “…This letter studies the morphological stability and specific resistivity of sub-10 nm silicide films of Ni, Ni0.95Pt0.05, and Ni0.9Pt0.1 formed on Si(100)…”
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    Journal Article
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    Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1−xPtx silicide films by Zhang, Zhen, Yang, Bin, Zhu, Yu, Gaudet, Simon, Rossnagel, Steve, Kellock, Andrew J., Ozcan, Ahmet, Murray, Conal, Desjardins, Patrick, Zhang, Shi-Li, Jordan-Sweet, Jean, Lavoie, Christian

    Published in Applied physics letters (20-12-2010)
    “…This letter reports on a process scheme to obtain highly reproducible Ni1−xPtx silicide films of 3–6 nm thickness formed on a Si(100) substrate. Such ultrathin…”
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    Journal Article
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    Adhesion of Polymer Interfaces Reinforced with Random and Diblock Copolymers as a Function of Geometry by Bernard, Brian, Brown, Hugh R, Hawker, Craig J, Kellock, Andrew J, Russell, Thomas P

    Published in Macromolecules (21-09-1999)
    “…The reinforcement effect of a thin layer of random copolymer at the interface between immiscible homopolymers was studied using an asymmetric double cantilever…”
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    Journal Article
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    Effect of N doping on structure and properties of DLC films produced by plasma beam deposition by Yen, B.K., Thiele, J.-U., Geisler, M., Kasai, P.H., White, R.L., York, B.R., Zadoori, H., Kellock, A.J., Tang, W.C., Tsai-Wei Wu, Toney, M.F., Marchon, B.

    Published in IEEE transactions on magnetics (01-07-2001)
    “…A novel plasma beam source for the deposition of DLC films is described. Wide ranges of ion energy (130-250 eV) and C/sub 2/H/sub 2//N/sub 2/ flow conditions…”
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    Journal Article Conference Proceeding
  12. 12

    Antimony assisted low-temperature processing of CuIn1axGaxSe2aySy solar cells by Yuan, Min, Mitzi, David B, Gunawan, Oki, Kellock, Andrew J, Chey, SJay, Deline, Vaughn R

    Published in Thin solid films (01-11-2010)
    “…Application of the Sb-doping method to low-temperature (a[control][curren]400AC) processing of CuIn1axGaxSe2aySy (CIGS) solar cells is explored, using a…”
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    Journal Article
  13. 13

    Antimony assisted low-temperature processing of CuIn 1 − x Ga xSe 2 − y S y solar cells by Yuan, Min, Mitzi, David B., Gunawan, Oki, Kellock, Andrew J., Chey, S. Jay, Deline, Vaughn R.

    Published in Thin solid films (2010)
    “…Application of the Sb-doping method to low-temperature (≤ 400 °C) processing of CuIn 1 − x Ga xSe 2 − y S y (CIGS) solar cells is explored, using a…”
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    Journal Article
  14. 14

    Exploitation of a self-limiting process for reproducible formationof ultrathin Ni 1 − x Pt x silicide films by Zhang, Zhen, Yang, Bin, Zhu, Yu, Gaudet, Simon, Rossnagel, Steve, Kellock, Andrew J., Ozcan, Ahmet, Murray, Conal, Desjardins, Patrick, Zhang, Shi-Li, Jordan-Sweet, Jean, Lavoie, Christian

    Published in Applied physics letters (21-12-2010)
    “…This letter reports on a process scheme to obtain highly reproducible Ni 1 − x Pt x silicide films of 3-6 nm thickness formed on a Si(100) substrate. Such…”
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    Journal Article
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    Morphological stability and specific resistivity of sub-10 nm silicide films of Ni 1 − x Pt x on Si substrate by Zhang, Zhen, Zhang, Shi-Li, Yang, Bin, Zhu, Yu, Rossnagel, Stephen M., Gaudet, Simon, Kellock, Andrew J., Jordan-Sweet, Jean, Lavoie, Christian

    Published in Applied physics letters (19-02-2010)
    “…This letter studies the morphological stability and specific resistivity of sub-10 nm silicide films of Ni, Ni 0.95 Pt 0.05 , and Ni 0.9 Pt 0.1 formed on…”
    Get full text
    Journal Article
  16. 16

    Exploitation of a self-limiting process for reproducible formation of ultrathin Ni 1−x Pt x silicide films by Zhang, Zhen, Yang, Bin, Zhu, Yu, Gaudet, Simon, Rossnagel, Steve, Kellock, Andrew J., Ozcan, Ahmet, Murray, Conal, Desjardins, Patrick, Zhang, Shi-Li, Jordan-Sweet, Jean, Lavoie, Christian

    Published in Applied physics letters (2010)
    “…This letter reports on a process scheme to obtain highly reproducible Ni 1−x Pt x silicide films of 3–6 nm thickness formed on a Si(100) substrate. Such…”
    Get full text
    Journal Article
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    Morphological stability and specific resistivity of sub-10 nm silicide films of Ni[sub 1 - x]Pt[sub x] on Si substrate by Zhang, Zhen, Shi-Li, Zhang, Bin, Yang, Yu, Zhu, Stephen, M. Rossnagel, Simon, Gaudet, Andrew, J. Kellock, Jean, Jordan-Sweet, Christian, Lavoie

    Published in Applied physics letters (2010)
    “…This letter studies the morphological stability and specific resistivity of sub-10 nm silicide films of Ni, Ni 0.95 Pt 0.05 , and Ni 0.9 Pt 0.1 formed on…”
    Get full text
    Journal Article
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    Track width definition of giant magnetoresistive sensors by ion irradiation by Folks, L., Baglin, J.E.E., Kellock, A.J., Carey, M.J., Terris, B.D., Gurney, B.

    Published in IEEE transactions on magnetics (01-07-2001)
    “…We describe the concept of using irradiation with light energetic ions in conjunction with a mask to define the edges of giant magnetoresistive sensors without…”
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    Journal Article Conference Proceeding