Search Results - "KEIR, A. M"

Surface topography changes during the growth of GaAs by molecular beam epitaxy by SMITH, G. W, PIDDUCK, A. J, WHITEHOUSE, C. R, GLASPER, J. L, KEIR, A. M, PICKERING, C

“…Changes in surface roughness taking place during (001) GaAs molecular beam epitaxy growth have been studied in situ using laser light scattering and ex situ…”
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Dependence of the critical thickness on Si doping of InGaAs on GaAs by Tanner, B. K., Parbrook, P. J., Whitehouse, C. R., Keir, A. M., Johnson, A. D., Jones, J., Wallis, D., Smith, L. M., Lunn, B., Hogg, J. H. C.

“…The formation of misfit dislocations during the initial stages of relaxation of In0.04Ga0.96As epitaxial layers on (001) GaAs has been studied by in situ…”
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Thermal mapping of defects in AlGaN∕GaN heterostructure field-effect transistors using micro-Raman spectroscopy by Pomeroy, J. W., Kuball, M., Wallis, D. J., Keir, A. M., Hilton, K. P., Balmer, R. S., Uren, M. J., Martin, T., Heard, P. J.

“…We illustrate the use of micro-Raman mapping to study the local effect of defects on device temperature in active AlGaN∕GaN heterostructure field-effect…”
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Channel Mobility in AlGaN/GaN HFETs on SiC and Sapphire Substrates by Uren, M.J., Martin, T., Hughes, B.T., Hilton, K.P., Wells, A., Balmer, R.S., Herbert, D.C., Keir, A.M., Wallis, D.J., Pidduck, A. J., Missous, M.

“…Drift mobility as a function of gate voltage has been measured in HFETs fabricated by MOVPE to a common layer structure, but with varying pinch‐off voltage…”
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Z -contrast imaging of AlN exclusion layers in GaN field-effect transistors by Wallis, D. J., Balmer, R. S., Keir, A. M., Martin, T.

“…The structural characteristics of AlN exclusion layers used to enhance the electron mobility in GaN-based field-effect transistor structures are investigated…”
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Composition measurement in strained AlGaN epitaxial layers using x-ray diffraction by Wallis, D. J., Keir, A. M., Balmer, R. S., Soley, D. E. J., Martin, T.

“…An x-ray diffraction technique is described which, by careful choice of the x-ray reflection used, minimizes errors in composition measurements resulting from…”
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Effect of Si doping on the relaxation mechanism of InGaAs on GaAs by Parbrook, P. J., Tanner, B. K., Lunn, B., Hogg, J. H. C., Keir, A. M., Johnson, A. D.

“…We report measurements on the initial stages of relaxation of Si-doped In0.04Ga0.96As epitaxial layers on (001) GaAs using in situ high-resolution…”
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In-situ X-ray imaging of III–V strained-layer relaxation processes by Whitehouse, C.R., Cullis, A.G., Barnett, S.J., Usher, B.F., Clark, G.F., Keir, A.M., Tanner, B.K., Lunn, B., Hogg, J.C.H., Johnson, A.D., Lacey, G., Spirkl, W., Hagston, W.E., Jefferson, J.H., Ashu, P., Smith, G.W., Martin, T.

“…The important value of the X-ray topography (XRT) technique for the investigation of III–V strained-layer relaxation processes is described. In addition to…”
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In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system by Lacey, G., Whitehouse, C.R., Parbrook, P.J., Cullis, A.G., Keir, A.M., Möck, P., Johnson, A.D., Smith, G.W., Clark, G.F., Tanner, B.K., Martin, T., Lunn, B., Hogg, J.H.C., Emeny, M.T., Murphy, B., Bennett, S.

“…In-situ X-ray topography (XRT) studies of misfit dislocation generation and movement in epitaxial InGaAs strained-layer structures on (001) GaAs are described…”
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Partial strain relaxation in (In,Ga)As epilayers on GaAs by means of twin formation by Mizuno, K., Möck, P., Tanner, B.K., Lacey, G., Whitehouse, C.R., Smith, G.W., Keir, A.M.

“…Strain relaxation in In 0.045Ga 0.955As epilayers grown by molecular beam epitaxy on (0 0 1) oriented GaAs substrates has been observed by monochromatic…”
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Thermal mapping of defects in Al Ga N ∕ Ga N heterostructure field-effect transistors using micro-Raman spectroscopy by Pomeroy, J. W., Kuball, M., Wallis, D. J., Keir, A. M., Hilton, K. P., Balmer, R. S., Uren, M. J., Martin, T., Heard, P. J.

“…We illustrate the use of micro-Raman mapping to study the local effect of defects on device temperature in active Al Ga N ∕ Ga N heterostructure field-effect…”
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Investigating the Relationship Between Ankle Arthrodesis and Adjacent-Joint Arthritis in the Hindfoot by Ling, Jeffrey S., MBBS, FRACS(Orth), Smyth, Niall A., MD, Fraser, Ethan J., MD, Seaworth, Christine M., MD, Ross, Keir A., MD, Kennedy, John G., MD, FRCS(Orth), Hogan, MaCalus V., MD

“…Background Ankle arthrodesis traditionally has been regarded as the treatment of choice for many patients with end-stage ankle arthritis. However, a major…”
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Opening the “Black Box” for Canadian Cardiac Surgery Residency Applicants by Stoklosa, Klaudiusz, Mazine, Amine, Forgie, Keir A., Brown, Amy, Hage, Ali, Ridwan, Khalid, Laurin, Charles, Luc, Jessica G.Y., Yanagawa, Bobby, Yau, Terrence M.

“…This study reports on the main criteria used by Canadian cardiac surgery residency program committees (RPCs) to select applicants and the perceptions of…”
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Partial strain relaxation in (In, Ga)As epilayers on GaAs by means of twin formation by MIZUNO, K, MÖCK, P, TANNER, B. K, LACEY, G, WHITEHOUSE, C. R, SMITH, G. W, KEIR, A. M

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In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs(001) system by LACEY, G, WHITEHOUSE, C. R, MARTIN, T, LUNN, B, HOGG, J. H. C, EMENY, M. T, MURPHY, B, BENNETT, S, PARBROOK, P. J, CULLIS, A. G, KEIR, A. M, MÖCK, P, JOHNSON, A. D, SMITH, G. W, CLARK, G. F, TANNER, B. K

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A study of the structure and electrical properties of Cd x Hg1−x Te grown by metalorganic vapor phase epitaxy (interdiffused multilayer process) by Irvine, S. J. C., Gough, J. S., Giess, J., Gibbs, M. J., Royle, A., Taylor, C. A., Brown, G. T., Keir, A. M., Mullin, J. B.

“…Epitaxial layers of Cd x Hg1−x Te (CMT) have been grown by the interdiffused multilayer process (IMP) at 350 °C. The electrical properties are fixed by the…”
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Strain Relaxation in InGaAs Epilayers on GaAs by Means of Twin Formation by Moeck, Peter, Mizuno, Kaoru, Tanner, Brian K., Lacey, Gales, Whitehouse, Colin R., Smith, Gilbert W., Keir, Andrew M.

“…Strain relaxation in In 0.045 Ga 0.955 As epilayers grown by molecular beam epitaxy on (001) vertical gradient freeze Bridgman GaAs substrates has been…”
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