Search Results - "KARPUSHIN, A. A"

USE OF TROPICAL HELIOS SOLAR PANELS FOR STAND-ALONE POWER SUPPLY TO CONSUMERS by Zhiltsov, S.A., Karpushin, A.A.

“…More and more regions make investments in renewable power. Objectively there is a threat of climate change due to use of combustible fuel. It means that more…”
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Microbiological spectrum of SSI pathogens in patients with chronic infectious spondylitis requiring revision surgery: results of continuous monocentric 5-year monitoring by Naumov, D. G., Vishnevskiy, A. A., Solovieva, N. S., Masalova, N. Yu, Yablonsky, P. K., Karpushin, A. A.

“…Objective. To analyze the results of the continuous monocentric 5-year microbiological monitoring of causative agents of surgical site infection (SSI) in…”
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Spinal aspergillosis: a rare clinical case and review of the literature by Naumov, D. G., Vishnevsky, A. A., Karpushin, A. A., Shchelkunov, M. M., Tkach, S. G.

“…Objective. To analyze long-term results of treatment of a patient with recurrent lumbar aspergillosis and to systematize the literature data. Material and…”
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Thoracolumbar tuberculosis spondylitis: an analytical literature review of surgical reconstruction techniques by Karpushin, A.A., Naumov, D.G., Vishnevsky, A.A., Nakaev, A.A.

“…Introduction Tuberculous spondylitis is the most common extrapulmonary tuberculosis. The thoracolumbar lesion due to tuberculous spondylitis is one of the most…”
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Fever associated with metal device. Case report by Potapenko, V. G., Karpushin, A. A., Leenman, E. E., Potikhonova, N. A., Mazurov, V. I.

“…Metal constructions can cause fever even after a few years post implantation. This paper describes a case of 27 year old female with a fever associated with…”
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Effect of the calculation method and the basis set on the structure and electrical properties of (4,4) carbon nanotubes with different lengths and open ends by Butyrskaya, E. V., Zapryagaev, S. A., Nechaeva, L. S., Karpushin, A. A., Izmailova, E. A.

“…The structure and electrical properties of open carbon nanotube with chirality (4,4), consisting of 5-15 segments, are calculated within four quantum chemical…”
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Revision Reconstruction of the Cervical Spine in a Patient With Early Deep Surgical Site Infection Complicated by Angular Kyphosis: Case Report and Review by Naumov, Denis G., Tkach, Sergey G., Ladygin, Anton A., Shchelkunov, Mikhail M., Karpushin, Andrey A.

“…Background. Deep surgical site infection (DSSI) is one of the most severe complications in spinal surgery. The timing and nature of DSSI are the determining…”
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Electronic Structure of Amorphous SiOx with Variable Composition by Karpushin, A. A., Gritsenko, V. A.

“…The heights of barriers for the injection of electrons and holes from silicon in SiO x have been calculated in the tight binding approximation without any…”
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Electronic Structure of Amorphous SiO x with Variable Composition by Karpushin, A A, Gritsenko, V A

“…The heights of barriers for the injection of electrons and holes from silicon in SiOx have been calculated in the tight binding approximation without any…”
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Electrochemical Synthesis of Composite Materials Based on the Nanoscale Powders of Tungsten Carbides in Salt Melt by Novoselova, I. A., Nakoneshnaja, E. P., Karpushin, N. A., Bykov, V. N., Dovbeshko, G. I., Rynder, A. D.

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Si–Si bond as a deep trap for electrons and holes in silicon nitride by Karpushin, A. A., Sorokin, A. N., Gritsenko, V. A.

“…A two-stage model of the capture of electrons and holes in traps in amorphous silicon nitride Si 3 N 4 has been proposed. The electronic structure of a “Si–Si…”
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Shift of the photoemission threshold in III–V and II–VI semiconductors by Karpushin, A. A., Sorokin, A. N.

“…The reasons why the photoemission threshold energy of semiconductors is lower than the ionization energy of constituent atoms have been investigated. It has…”
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Electronic structure of SiN x by Sorokin, A. N., Karpushin, A. A., Gritsenko, V. A.

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Electronic structure of SiNx by Sorokin, A. N., Karpushin, A. A., Gritsenko, V. A.

“…The electronic structure of amorphous silicon nitride SiN x enriched with silicon as a function of its chemical composition has been calculated in the…”
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Electronic structures of silicon nitride revealed by tight binding calculations by Sorokin, A.N., Karpushin, A.A., Gritsenko, V.A., Wong, Hei

“…A new tight binding (TB) potential model was proposed for determining the electronic structures of ionic–covalent materials. In the TB model, the matrix…”
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Asymptotic boundary conditions in cluster simulation of electronic structures for infinite and semi-infinite crystals. 1. infinite crystals by Karpushin, A. A., Sorokin, A. N.

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Mechanism of SO2 adsorption on receptor sites incorporated into porous SiO2 films by Karpushin, A. A., Sorokin, A. N.

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The role of the negatively charged (Si3−Si−F2)− complexes in interactions of fluorine with the (111) surface of silicon by Baklanov, M. R., Karpushin, A. A., Moginikov, K. P., Sorokin, A. N.

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Local density of states of GaAs and InAs surfaces: ideal(111), (001) and (110) surfaces and monoatomic steps on the (111) and the (001) surface by GADIYAK, G. V, KARPUSHIN, A. A, KOROLENKO, I. N, MOROKOV, Y. N, SAZONOV, S. G, TOMASEK, M

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Hydrogen adsorption on the silicon (001) surface and on a step on the (111) surface by GADIJAK, G. V, KARPUSHIN, A. A, KOROLENKO, I. V, MOROKOV, JU. N, TOMASEK, M

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