Search Results - "KANBER, H"

Pseudomorphic HEMT manufacturing technology for multifunctional Ka-band MMIC applications by Wu, C.S., Pao, C.K., Yau, W., Kanber, H., Hu, M., Bar, S.X., Kurdoghlian, A., Bardai, Z., Bosch, D., Seashore, C., Gawronski, M.

“…We have demonstrated very good performance, high yield Ka-band multifunctional MMIC results using our recently developed 0.25-/spl mu/m gate length…”
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Optimization of selective area growth of GaAs by low pressure organometallic vapor phase epitaxy for monolithic integrated circuits by KANBER, H, BAR, S. X, NORRIS, P. E, BECKHAM, C, PACER, M

“…Selective area growth by low pressure OMVPE has been optimized to grow MESFET islands on masked GaAs substrates with excellent smooth morphology, controlled…”
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Correlation of undoped, in-alloyed, and whole-ingot annealed semi-insulating GaAs substrates for low-noise microwave amplifiers by Kanber, H., Wang, D.C.

“…The quality of LEC grown GaAs substrates critically affects the final low-noise microwave device and circuit performance as evidenced by comparing Si-implanted…”
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Growth and diffusion of abrupt beryllium-doped profiles in gallium arsenide by organometallic vapor phase epitaxy by TEJWANI, M. J, KANBER, H, PAINE, B. M, WHELAN, J. M

“…We have grown abrupt beryllium-doped profiles in gallium arsenide by organometallic vapor phase epitaxy. Secondary-ion mass spectroscopy is used to study the…”
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Optimization of ohmic contacts for reliable heterostructure GaAs materials by WU, C. S, YU, K. K, KANBER, H

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Whole-ingot annealed semi-insulating GaAs substrates for low-noise microwave amplifiers by Kanber, H., Wang, D.C.

“…The quality of liquid-encapsulated Czochralski (LEC) grown GaAs substrates critically affects the final low-noise microwave device and circuit performance as…”
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Redistribution of manganese after annealing of GaAs implanted with Si+ and Se by Kanber, H., Feng, M., Whelan, J. M.

“…The redistribution of Mn in Si+ and Se+ implanted Cr-doped semi-insulating GaAs substrates is studied by secondary-ion mass spectrometry as a function of…”
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Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistors by FENG, M, KANBER, H, EU, V. K, WATKINS, E, HACKETT, L. R

“…High-performance, ion-implanted GaAs metal-semiconductor field-effect transistors for operation in the frequency range 10–60 GHz have demonstrated noise…”
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Proton implantation isolation for microwave monolithic circuits by Esfandiari, R., Feng, M., Kanber, H.

“…We show that proton implantation isolation effectively reduces RF losses for microwave monolithic integrated circuits and that the degree of effectiveness is a…”
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Role of vanadium in organometallic vapor phase epitaxy grown GaAs by HOBSON, W. S, PEARTON, S. J, SWAMINATHAN, V, JORDAN, A. S, KANBER, H, KAO, Y. J, HAEGEL, N. M

“…The electrical and photoluminescent properties of vanadium incorporated into GaAs epitaxial layers from a VO(OC2H5)3 source during organometallic vapor phase…”
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Properties of GaAs: Si epitaxial layers grown in a multiwafer MOCVD reactor by KANBER, H, ZIELINSKI, T, WHELAN, J. W

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First-Order Torques and Solid-Body Spinning Velocities in Intense Sound Fields by Wang, T. G., Kanber, H., Rudnick, I.

“…The letter reports an observation of first-order nonzero time-averaged torques and solid-body spinning velocities in intense acoustic fields. The experimental…”
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Rapid thermal annealing of Si implanted GaAs for power field-effect transistors by KANBER, H, HENDERSON, W. B, RUSH, R. C, SIRACUSA, M, WHELAN, J. M

“…Rapid thermal annealing (RTA) for the electrical activation of 300-keV Si+ implants in GaAs at doses of (6–8) ×1012 cm−2 is shown to be superior to…”
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Fourth-order acoustic torque in intense sound fields by Wang, T. G., Kanber, H., Olli, E. E.

“…We report the first observation of a fourth-order acoustic torque in intense sound fields. The torque was determined by measuring the acoustically induced…”
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Design translation of an X-band multifunction PHEMT MMIC by Yau, W., Kanber, H., Wu, C.S., Paine, B.M., Bar, S., Bardai, Z., Janesch, S., Kaputa, D., Fabian, W.

“…Design translation is demonstrated at X-Band utilizing a multifunction MMIC as a test vehicle. The MMIC circuit consisting of a switch, LNA and attenuator is…”
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High performance ion-implanted low noise GaAs MESFET's by Feng, M., Eu, V.K., Kanber, H., Hackett, R.

“…Low noise GaAs MESFET's fabricated by ion-implanting into AsCl 3 VPE buffer layers have demonstrated not only excellent dc and RF performance, but also a…”
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Low noise GaAs metal-semiconductor field-effect transistor made by ion implantation by Feng, M., Eu, V. K., Kanber, H., Watkins, E., Schellenberg, J. M., Yamasaki, H.

“…Low noise GaAs metal-semiconductor field-effect transitors (MESFET’s) have been made by direct ion implantation into high pressure liquid encapsulated…”
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Correlation between chemical and electrical profiles in Si+, Se+ and S+ implanted bulk and epitaxial GaAs by Kanber, H., Feng, M., Eu, V. K., Rush, R. C., Henderson, W. B.

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GaAs MESFET's made by ion implantation into MOCVD Buffer layers by Feng, M., Eu, V.K., Zielinski, T., Kanber, H., Henderson, W.B.

“…Low-noise GaAs metal-semiconductor field-effect transistors (MESFET's) have been made using ion-implanted metal organic chemical vapor deposition (MOCVD)…”
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VA-2 optimization of ion implanted GaAs low noise FET by Feng, M., Kanber, H., Eu, V.K., Hackett, L.H., Yamasaki, H., Watkin, E.T., Schellenberg, J.M.

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