Search Results - "KAMINSKII, A. S"

Hexavacancies in crystalline silicon by Kaminskii, A. S.

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Thermal and neutron-physical features of the nuclear reactor for a power pulsation plant for space applications by Gordeev, É. G., Kaminskii, A. S., Konyukhov, G. V., Pavshuk, V. A., Turbina, T. A.

“…We have explored the possibility of creating small-size reactors with a high power output with the provision of thermal stability and nuclear safety under…”
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Characteristics of the Thermal-Neutron Field in the Experimental Channel of a Pulsed Graphite Reactor by Gorin, N V, Kandiev, YaZ, Kashaeva, E A, Rukavishnikov, G V, Sadykov, N R, Shmakov, D V, Shcherbina, AN, Gaidaichuk, V A, Kaz'min, YuM, Pakhnits, V A, Skivka, A S, Vasil'ev, A P, Malinkin, V M, Kaminskii, A S, Pavshuk, V A

“…The current of the sensitive sections of a five-section Compton emission neutron detector, which are placed at different levels in the vertical direction in…”
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Orientation of ring hexavacancies under bending of silicon crystals by Kaminskii, A. S.

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Orientation kinetics of the hexavacancies—V6 (B804) in silicon by Kaminskii, A.S.

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Splitting of the ground state of shallow acceptors in silicon by Karasyuk, V.A, An, S, Thewalt, M.L.W, Lightowlers, E.C, Kaminskii, A.S

“…The results of near infra-red piezo-photoluminescence, photoluminescence excitation, and absorption spectroscopy of silicon doped with Al, Ga, and In performed…”
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Disorientation kinetics of the B 80 4 centers in single crystal silicon by Kaminskii, A. S.

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Orientation kinetics of the hexavacancies: V6 (B480) in silicon by KAMINSKII, A. S

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Luminescence analysis of group III and V impurities in silicon by Kaminskii, A. S., Kolesnik, L. I., Leiferov, B. M., Pokrovskii, Ya. E.

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Fourier-transform photoluminescence spectroscopy of excitons bound to group-III acceptors in silicon: Zeeman effect by Karasyuk, VA, Thewalt, ML, An, S, Lightowlers, EC, Kaminskii, AS

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Photoluminescence of excitons bound to the isoelectronic hydrogen-related defects B711 (1.1377 eV) in silicon by Kaminskii, AS, Lavrov, EV, Karasyuk, VA, Thewalt, ML

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Photoluminescence of excitons bound to the isoelectronic hydrogen-related defects B80(1.1470 eV) and B191(1.1431 eV) in silicon by Kaminskii, AS, Lavrov, EV, Karasyuk, VA, Thewalt, ML

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Effects of the containment chamber of a high-temperature gas-cooled reactor on the core by Bogomolov, A. M., Zhirnov, A. V., Zavorokhin, V. A., Kaminskii, A. S., Paramonov, V. V., Talyzin, V. M.

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Test stand for research on the physics of high-temperature gas-cooled reactors by Bogomolov, A. M., Zavorokhin, V. A., Kaminskii, A. S., Loboda, S. V., Molodtsov, A. D., Paramonov, V. V., Talyzin, V. M., Cherepanov, A. V.

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Uniaxial-stress-induced alignment of the B480 (J-lines) centres in silicon by KAMINSKII, A. S, LAVROV, E. V

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Photoluminescence of excitons bound to the radiation damage defects B41(1.1509 eV) in silicon by KAMINSKII, A. S, LAVROV, E. V, KARASYUK, V. A, THEWALT, M. L. W

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Characteristics of the thermal-neutron field in the experimental channel of a pulsed graphite reactor by GORIN, N. V, KANDIEV, Ya. Z, SKIVKA, A. S, VASIL'EV, A. P, MALINKIN, V. M, KAMINSKII, A. S, PAVSHUK, V. A, KASHAEVA, E. A, RUKAVISHNIKOV, G. V, SADYKOV, N. R, SHMAKOV, D. V, SHCHERBINA, A. N, GAIDAICHUK, V. A, KAZ'MIN, Yu. M, PAKHNITS, V. A

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Photoluminescence of excitons bound to the isoelectronic hydrogen-related defects B 80 (1.1470 eV) and B 19 1 (1.1431 eV) in silicon by Kaminskii, A. S., Lavrov, E. V., Karasyuk, V. A., Thewalt, M. L. W.

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Photoluminescence of excitons bound to the isoelectronic hydrogen-related defects B 71 1 (1.1377 eV) in silicon by Kaminskii, A. S., Lavrov, E. V., Karasyuk, V. A., Thewalt, M. L. W.

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Applicability of the Volterra principle in the analysis of crack propagation in hereditary elastic media by Kaminskii, A. S., Rushchitskii, Ya. Ya

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