Search Results - "KAMINS, T. I"

Photovoltaic retinal prosthesis: implant fabrication and performance by Wang, Lele, Mathieson, K, Kamins, T I, Loudin, J D, Galambos, L, Goetz, G, Sher, A, Mandel, Y, Huie, P, Lavinsky, D, Harris, J S, Palanker, D V

“…The objective of this work is to develop and test a photovoltaic retinal prosthesis for restoring sight to patients blinded by degenerative retinal diseases. A…”
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Sequence-Specific Label-Free DNA Sensors Based on Silicon Nanowires by Li, Z, Chen, Y, Li, X, Kamins, T. I, Nauka, K, Williams, R. S

“…Highly sensitive and sequence-specific DNA sensors were fabricated based on silicon nanowires (SiNWs) with single stranded (ss) probe DNA molecules covalently…”
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Growth and Structure of Chemically Vapor Deposited Ge Nanowires on Si Substrates by Kamins, T. I, Li, X, Williams, R. Stanley, Liu, X

“…Chemical vapor deposition by Au-catalyzed decomposition of GeH4 has been used to grow Ge nanowires on single-crystal silicon. The nanowires grow over the…”
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3D composition of epitaxial nanocrystals by anomalous X-ray diffraction: observation of a Si-rich core in Ge domes on Si(100) by Malachias, A, Kycia, S, Medeiros-Ribeiro, G, Magalhães-Paniago, R, Kamins, T I, Williams, R Stanley

“…Three-dimensional composition maps of nominally pure Ge domes grown on Si(001) at 600 degrees C were obtained from grazing incidence anomalous x-ray scattering…”
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Diameter control of Ti-catalyzed silicon nanowires by Sharma, S, Kamins, T.I, Williams, R.Stanley

“…Titanium silicide nanoparticles on silicon substrates catalyze the decomposition of a silicon-containing gas, resulting in accelerated growth of silicon in one…”
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Mechanical properties of self-welded silicon nanobridges by Tabib-Azar, Massood, Nassirou, Maissarath, Wang, Run, Sharma, S., Kamins, T. I., Islam, M. Saif, Williams, R. Stanley

“…Mechanical properties of self-welded [111] single-crystal silicon nanowire bridges grown between two silicon posts using metal-catalyzed chemical vapor…”
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Alloying mechanisms for epitaxial nanocrystals by Leite, M S, Medeiros-Ribeiro, G, Kamins, T I, Williams, R Stanley

“…The different mechanisms involved in the alloying of epitaxial nanocrystals are reported in this Letter. Intermixing during growth, surface diffusion, and…”
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Lithographic positioning of self-assembled Ge islands on Si(001) by Kamins, T. I., Williams, R. Stanley

“…Ge islands were deposited on Si(001) partially covered with patterned oxide. Selective Si was deposited on some wafers before Ge deposition to form raised…”
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Structural characteristics and connection mechanism of gold-catalyzed bridging silicon nanowires by Sharma, S., Kamins, T.I., Islam, M.S., Williams, R. Stanley, Marshall, A.F.

“…Lateral, single-crystalline silicon nanowires were synthesized using chemical vapor deposition catalyzed by gold nanoparticles deposited on one of the vertical…”
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Chemical vapor deposition of Si nanowires nucleated by TiSi2 islands on Si by Kamins, T. I., Williams, R. Stanley, Chen, Y., Chang, Y.-L., Chang, Y. A.

“…Silicon “nanowires” can be formed by chemical vapor deposition of Si onto Si substrates on which nanometer-scale, Ti-containing islands have been grown. At the…”
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Growth and use of metal nanocrystal assemblies on high-density silicon nanowires formed by chemical vapor deposition by YASSERI, A. A, SHARMA, S, KAMINS, T. I, LI, Z, WILLIAMS, R. Stanley

“…In this paper, we describe the growth and potential application of metal nanocrystal assemblies on metal-catalyzed, CVD-grown silicon nanowires (SiNWs). The…”
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Thermal stability of Ti-catalyzed Si nanowires by Kamins, T. I., Li, X., Williams, R. Stanley

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Nano-graphoepitaxy of semiconductors for 3D integration by Crnogorac, F., Witte, D.J., Xia, Q., Rajendran, B., Pickard, D.S., Liu, Z., Mehta, A., Sharma, S., Yasseri, A., Kamins, T.I., Chou, S.Y., Pease, R.F.W.

“…The advantages of integrating semiconductor devices at more than one level (‘3D integration’) are now recognized. Key to achieving monolithic 3DICs is the…”
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Dome-to-pyramid transition induced by alloying of Ge islands on Si(001) by KAMINS, T. I, MEDEIROS-RIBEIRO, G, OHLBERG, D. A. A, WILLIAMS, R. S

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Silicon-germanium interdiffusion and interfaces in self-assembled quantum dots by VANFLEET, R. R, BASILE, D. P, KAMINS, T. I, SILCOX, J, WILLIAMS, R. Stanley

“…A scanning transmission electron microscope (STEM) study of silicon–germanium alloying using annular dark field (ADF) or Z-contrast imaging and electron energy…”
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Evolution of thermodynamic potentials in closed and open nanocrystalline systems: Ge-Si:Si(001) islands by Leite, Marina S, Malachias, A, Kycia, S W, Kamins, T I, Williams, R Stanley, Medeiros-Ribeiro, G

“…An open (closed) system, in which matter is (not) exchanged through surface diffusion, was realized via growth kinetics. Epitaxially grown Si-Ge:Si (001)…”
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Effect of self-assembled Ge nanostructures on Si surface electronic properties by KAMINS, T. I, NAUKA, K, WILLIAMS, R. S

“…Incorporating self-assembled Ge islands on Si surfaces into electronic devices has been suggested as a means of forming small features without fine-scale…”
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InP nanobridges epitaxially formed between two vertical Si surfaces by metal-catalyzed chemical vapor deposition by Yi, S. S., Girolami, G., Amano, J., Saif Islam, M., Sharma, S., Kamins, T. I., Kimukin, I.

“…The heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high-performance III-V materials with Si technology. We…”
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Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si for Optical Modulators by Yu-Hsuan Kuo, Yong Kyu Lee, Yangsi Ge, Shen Ren, Roth, J.E., Kamins, T.I., Miller, D.A.B., Harris, J.S.

“…We present observations of quantum confinement and quantum-confined Stark effect (QCSE) electroabsorption in Ge quantum wells with SiGe barriers grown on Si…”
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Thin Dielectric Spacer for the Monolithic Integration of Bulk Germanium or Germanium Quantum Wells With Silicon-on-Insulator Waveguides by Ren, S., Kamins, T. I., Miller, D. A. B.

“…We propose an approach to monolithically integrate bulk germanium (Ge) or Ge quantum wells with silicon-on-insulator (SOI) waveguides through selective epitaxy…”
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