Search Results - "KALECZYC, A. W"

The effect of electron cyclotron resonance plasma parameters on the aspect ratio of trenches in HgCdTe by STOLTZ, A. J, BENSON, J. D, BOYD, P. R, MARTINKA, M, VARESI, J. B, KALECZYC, A. W, SMITH, E. P. G, JOHNSON, S. M, RADFORD, W. A, DINAN, J. H

“…Values of the aspect ratio for trenches etched into HgCdTe by an ECR plasma containing H and Ar are limited by the phenomenon of etch lag. Modeling this plasma…”
Get full text

Determination of the ion angular distribution for electron cyclotron resonance, plasma-etched HgCdTe trenches by BENSON, J. D, STOLTZ, A. J, VARESI, J. B, MARTINKA, M, KALECZYC, A. W, ALMEIDA, L. A, BOYD, P. R, DINAN, J. H

“…Ion angular distribution (IAD) affects the width and aspect ratio in electron cyclotron resonance (ECR)-etched HgCdTe trenches. The IAD was determined by…”
Get full text

Investigation of HgCdTe surface quality following br-based etching for device fabrication using spectroscopic ellipsometry by VARESI, J. B, BENSON, J. D, MARTINKA, M, STOLTZ, A. J, MASON, W. E, ALMEIDA, L. A, KALECZYC, A. W, BOYD, P. R, DINAN, J. H

“…We have examined the etching of HgCdTe (x = 0.2) with bromine/ethylene glycol (Br/EG) solutions. Using a spectroscopic ellipsometer, we tracked the…”
Get full text

Surface structure of plasma-etched (211)B HgCdTe by BENSON, J. D, STOLTZ, A. J, DINAN, J. H, VARESI, J. B, ALMEIDA, L. A, SMITH, E. P. G, JOHNSON, S. M, MARTINKA, M, KALECZYC, A. W, MARKUNAS, J. K, BOYD, P. R

“…The surface of (211)B HgCdTe has been studied by reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). RHEED analysis of the…”
Get full text

Effect of photoresist-feature geometry on electron-cyclotron resonance plasma-etch reticulation of HgCdTe diodes by BENSON, J. D, STOLTZ, A. J, KALECZYC, A. W, MARTINKA, M, ALMEIDA, L. A, BOYD, P. R, DINAN, J. H

“…The factors that affect the trench width and aspect ratio in electron-cyclotron resonance (ECR) etched HgCdTe and CdTe are investigated. The ECR etch bias and…”
Get full text

Macro-loading effects of electron-cyclotron resonance etched II-VI materials by STOLTZ, A. J, BENSON, J. D, VARESI, J. B, MARTINKA, M, SPERRY, M. J, KALECZYC, A. W, ALMEIDA, L. A, BOYD, P. R, DINAN, J. H

“…It has been observed in semiconductor processing that the etch rates for materials subjected to an electron-cyclotron resonance (ECR) plasma change with the…”
Get full text

Lithography factors that determine the aspect ratio of electron cyclotron resonance plasma etched HgCdTe trenches by BENSON, J. D, STOLTZ, A. J, DINAN, J. H, BOYD, P. R, MARTINKA, M, VARESI, J. B, ALMEIDA, L. A, OLVER, K. A, KALECZYC, A. W, JOHNSON, S. M, RADFORD, W. A

“…Factors that affect width and aspect ratio in ECR etched HgCdTe trenches are investigated. The ECR etch bias and anisotropy are determined by photoresist…”
Get full text

Electrical characterization of Cd∕CdTe Schottky barrier diodes by Mason, Whitney, Almeida, L. A., Kaleczyc, A. W., Dinan, J. H.

“…We have deposited Cd metal contacts on molecular-beam epitaxy CdTe(112)B on Si(112) and have made electronic transport measurements to deduce the properties of…”
Get full text