Search Results - "Kälblein, Daniel"

Contact Resistance and Megahertz Operation of Aggressively Scaled Organic Transistors by Ante, Frederik, Kälblein, Daniel, Zaki, Tarek, Zschieschang, Ute, Takimiya, Kazuo, Ikeda, Masaaki, Sekitani, Tsuyoshi, Someya, Takao, Burghartz, Joachim N., Kern, Klaus, Klauk, Hagen

“…Bottom‐gate, top‐contact organic thin‐film transistors (TFTs) with excellent static characteristics (on/off ratio: 107; intrinsic mobility: 3 cm2 (V s)−1) and…”
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Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric by Kälblein, Daniel, Weitz, R. Thomas, Böttcher, H. Jens, Ante, Frederik, Zschieschang, Ute, Kern, Klaus, Klauk, Hagen

“…A novel approach for the fabrication of transistors and circuits based on individual single-crystalline ZnO nanowires synthesized by a low-temperature…”
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Contact Doping and Ultrathin Gate Dielectrics for Nanoscale Organic Thin-Film Transistors by Ante, Frederik, Kälblein, Daniel, Zschieschang, Ute, Canzler, Tobias W., Werner, Ansgar, Takimiya, Kazuo, Ikeda, Masaaki, Sekitani, Tsuyoshi, Someya, Takao, Klauk, Hagen

“…To suppress undesirable short‐channel effects in organic transistors with nanoscale lateral dimensions, aggressive gate‐dielectric scaling (using an ultra‐thin…”
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Solution‐Processed Organic Transistors with Excellent Electrical Stability under Ambient Conditions by Kettner, Michel, Mi, Zhou, Kälblein, Daniel, Brill, Jochen, Blom, Paul W. M., Weitz, R. Thomas

“…The application of organic transistors in backplane technology is strongly hindered by their perceived instability to current and bias stress. High‐performance…”
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High-Performance ZnO Nanowire Transistors with Aluminum Top-Gate Electrodes and Naturally Formed Hybrid Self-Assembled Monolayer/AlO x Gate Dielectric by Kälblein, Daniel, Ryu, Hyeyeon, Ante, Frederik, Fenk, Bernhard, Hahn, Kersten, Kern, Klaus, Klauk, Hagen

“…A method for the formation of a low-temperature hybrid gate dielectric for high-performance, top-gate ZnO nanowire transistors is reported. The hybrid gate…”
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High-Yield Transfer Printing of Metal–Insulator–Metal Nanodiodes by Bareiß, Mario, Ante, Frederik, Kälblein, Daniel, Jegert, Gunther, Jirauschek, Christian, Scarpa, Giuseppe, Fabel, Bernhard, Nelson, Edward M, Timp, Gregory, Zschieschang, Ute, Klauk, Hagen, Porod, Wolfgang, Lugli, Paolo

“…Nanoscale metal–insulator–metal (MIM) diodes represent important devices in the fields of electronic circuits, detectors, communication, and energy, as their…”
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Unipolar Sequential Circuits Based on Individual-Carbon-Nanotube Transistors and Thin-Film Carbon Resistors by Ryu, Hyeyeon, Kälblein, Daniel, Schmidt, Oliver G, Klauk, Hagen

“…A fabrication process for the monolithic integration of field-effect transistors based on individual carbon nanotubes and load resistors based on…”
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Bulk transport and contact limitation of MoS2 multilayer flake transistors untangled via temperature-dependent transport measurements by Vladimirov, Ilja, Chow, Catherine, Strudwick, Andrew-James, Kowalsky, Wolfgang, Schwab, Matthias Georg, Kälblein, Daniel, Weitz, Ralf Thomas

“…Rational use of novel high‐performance semiconductors in field‐effect transistors (FETs) requires exact knowledge of the dominating charge transport…”
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Highly Reliable Carbon Nanotube Transistors with Patterned Gates and Molecular Gate Dielectric by Weitz, R. Thomas, Zschieschang, Ute, Forment-Aliaga, Alicia, Kälblein, Daniel, Burghard, Marko, Kern, Klaus, Klauk, Hagen

“…The prospect of realizing nanoscale transistors using individual semiconducting carbon nanotubes offers enormous potential, both as an alternative to silicon…”
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Rectennas Revisited by Bareiss, Mario, Krenz, Peter M., Szakmany, Gergo P., Tiwari, Badri N., Kalblein, Daniel, Orlov, Alexei O., Bernstein, Gary H., Scarpa, Giuseppe, Fabel, Bernhard, Zschieschang, Ute, Klauk, Hagen, Porod, Wolfgang, Lugli, Paolo

“…In the late 1960s, a new concept was proposed for an infrared absorbing device called a "rectenna" that, combining an antenna and a nanoscale…”
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Single-crystal field-effect transistors of new Cl2-NDI polymorph processed by sublimation in air by He, Tao, Stolte, Matthias, Burschka, Christian, Hansen, Nis Hauke, Musiol, Thomas, Kälblein, Daniel, Pflaum, Jens, Tao, Xutang, Brill, Jochen, Würthner, Frank

“…Physical properties of active materials built up from small molecules are dictated by their molecular packing in the solid state. Here we demonstrate for the…”
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Low-Temperature Solution-Processed Memory Transistors Based on Zinc Oxide Nanoparticles by Faber, Hendrik, Burkhardt, Martin, Jedaa, Abdesselam, Kälblein, Daniel, Klauk, Hagen, Halik, Marcus

“…We report on thin!film transistors based on ZnO nanoparticles processed from solution and with a maximum temperature of 100 °C. Electron mobilities up to 2.5…”
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Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors with improved performance and stability by Zschieschang, Ute, Ante, Frederik, Kälblein, Daniel, Yamamoto, Tatsuya, Takimiya, Kazuo, Kuwabara, Hirokazu, Ikeda, Masaaki, Sekitani, Tsuyoshi, Someya, Takao, Nimoth, Jan Blochwitz, Klauk, Hagen

“…[Display omitted] ► DNTT thin-film transistors have mobilities up to 2 cm 2/V s and on/off ratio of 10 8. ► DNTT thin-film transistors have better air…”
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Organic Transistors: Solution‐Processed Organic Transistors with Excellent Electrical Stability under Ambient Conditions (Adv. Electron. Mater. 10/2019) by Kettner, Michel, Mi, Zhou, Kälblein, Daniel, Brill, Jochen, Blom, Paul W. M., Weitz, R. Thomas

“…In article number 1900295, Michel Kettner, R. Thomas Weitz, and co‐workers demonstrate organic printed transistors that have better electrical stability than…”
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Bulk transport and contact limitation of MoS 2 multilayer flake transistors untangled via temperature-dependent transport measurements: Bulk transport and contact limitation of MoS 2 multilayer flake transistors by Vladimirov, Ilja, Chow, Catherine, Strudwick, Andrew-James, Kowalsky, Wolfgang, Schwab, Matthias Georg, Kälblein, Daniel, Weitz, Ralf Thomas

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High-performance ZnO nanowire transistors with aluminum top-gate electrodes and naturally formed hybrid self-assembled monolayer/AlO(x) gate dielectric by Kälblein, Daniel, Ryu, Hyeyeon, Ante, Frederik, Fenk, Bernhard, Hahn, Kersten, Kern, Klaus, Klauk, Hagen

“…A method for the formation of a low-temperature hybrid gate dielectric for high-performance, top-gate ZnO nanowire transistors is reported. The hybrid gate…”
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Anisotropic electron mobility studies on Cl2-NDI single crystals and the role of static and dynamic lattice deformations upon temperature variation by Hansen, Nis Hauke, May, Falk, Kälblein, Daniel, Schmeiler, Teresa, Lennartz, Christian, Sanchez-Carrera, Roel, Steeger, Alexander, Burschka, Christian, Stolte, Matthias, Würthner, Frank, Brill, Jochen, Pflaum, Jens

“…The anisotropic electron transport in the (001) plane of sublimation-grown Cl$_{2}$-NDI (naphthalene diimide) single crystals is analysed over a temperature…”
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Nano-transfer printing of functioning MIM tunnel diodes by Bareiss, M., Weiler, B., Kalblein, D., Zschieschang, U., Klauk, H., Scarpa, G., Fabel, B., Lugli, P., Porod, W.

“…Nano diodes show great potential for applications in detectors, communications and energy harvesting. In this work, we focus on nano transfer printing (nTP) to…”
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Aluminum top-gate ZnO nanowire transistors with improved transconductance by Kalblein, D., Fenk, B., Hahn, K., Zschieschang, U., Kern, K., Klauk, H.

“…The authors shows that by replacing gold with aluminum for the top gate, the thickness of the gate dielectric increases by a few nanometers due to the…”
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Combinational and sequential logic with transistors based on individual carbon nanotubes by Ryu, H., Kalblein, D., Zschieschang, U., Schmidt, O. G., Klauk, H.

“…We report on the fabrication of FETs based on individual CNTs with switching frequencies above 1 MHz and load resistors based on vacuum-deposited carbon films,…”
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