Search Results - "Juso, H."

World's highest efficiency triple-junction solar cells fabricated by inverted layers transfer process by Takamoto, T, Agui, T, Yoshida, A, Nakaido, K, Juso, H, Sasaki, K, Nakamora, K, Yamaguchi, H, Kodama, T, Washio, H, Imaizumi, M, Takahashi, M

“…A world record-setting efficiency of 35.8% at AM1.5G (x1) has been demonstrated by an InGaP (1.88 eV)/GaAs/InGaAs (0.97 eV) triple-junction solar cell…”
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Three-dimensional very thin stacked packaging technology for SiP by Yano, Y., Sugiyama, T., Ishihara, S., Fukui, Y., Juso, H., Miyata, K., Sota, Y., Fujita, K.

“…In order to achieve the greater compactness, lightness, high- and multi-functionality required of mobile equipment and other electronic devices, we have…”
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Board level reliability of CSP by Juso, H., Yamaji, Y., Kimura, T., Fujita, K., Kada, M.

“…Companies are pushing the development of CSP (chip size package or chip scale package), which has almost no limit to LSI chip size. Sharp has developed a CSP,…”
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Triple-chip stacked CSP by Fukui, Y., Yano, Y., Juso, H., Matsune, Y., Miyata, K., Narai, A., Sota, Y., Takeda, Y., Fujita, K., Kada, M.

“…As electronic devices, particularly cellular telephones, become more compact, lighter in weight and more functional, it is becoming necessary to decrease the…”
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Board level reliability of three-dimensional systems in package (SIPs) by Sugiyama, T., Yano, Y., Ishihara, S., Maruyama, T., Juso, H., Kirnura, T., Kada, M.

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Development of highly reliable CSP by Yamaji, Y., Juso, H., Ohara, Y., Matsune, Y., Miyata, K., Sota, Y., Narai, A., Kimura, T., Fujita, K., Kada, M.

“…High density packages are demanded due to recent miniaturization for personal tools. In order to satisfy these demands, development is being done in various…”
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Characteristics of Concentrator Triple Junction Cell Optimized for Current Matching by Yoshida, A., Juso, H., Agui, T., Nakamura, K., Sasaki, K., Takamoto, T., Tanaka, M., Kaneiwa, M., Okamoto, K.

“…In the case of the triple-junction cell, in order to get maximum photo-current, current-matching for incident light by optimization of subcell thickness is…”
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Effect of Hf addition (0.24 w/o) on the oxidation behavior of TiAl at high temperatures by Taniguchi, Shigeji, Shibata, Toshio, Juso, Hiroyuki, Katoh, Naoki

“…The isothermal oxidation behavior of TiAl coupons containing 0.24 wt.% Hf has been studied in the temperature range 1100 to 1400 K in a flow of purified oxygen…”
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Effect of Hf additions on the isothermal-oxidation behavior of TiAl at high temperatures by TANIGUCHI, S, JUSO, H, SHIBATA, T

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