Search Results - "Juraj Racko"

Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure by HARMATHA, Ladislav, STUCHLIKOVA, Lubica, RACKO, Juraj, MAREK, Juraj, PECHACEK, Juraj, BENKO, Peter, NEMEC, Michal, BREZA, Juraj

“…The paper presents the results of capacitance measurements on GaN/AlGaN/GaN Schottky heterostructures grown on an Al2O3 substrate by Low-Pressure Metal-Organic…”
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Trap-assisted tunnelling current in MIM structures by Racko Juraj, Mikolášek Miroslav, Granzner Ralf, Breza Juraj, Donoval Daniel, Grmanová Alena, Harmatha Ladislav, Schwierz Frank, Fröhlich Karol

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Silicon based MIS photoanode for water oxidation: A comparison of RuO2 and Ni Schottky contacts by Mikolasek, Miroslav, Frohlich, Karol, Husekova, Kristina, Racko, Juraj, Rehacek, Vlastimil, Chymo, Filip, Tapajna, Milan, Harmatha, Ladislav

“…•Ruthenium oxide suggested as a transparent catalytic gate for MIS photoanode.•Lower Fermi level pinning observed for ruthenium oxide compared to Ni MIS…”
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Analysis of low temperature output parameters for investigation of silicon heterojunction solar cells by Mikolášek, Miroslav, Racko, Juraj, Harmatha, Ladislav

“…•Highlights Output parameters of silicon heterojunction solar cells are analyzed by simulation.•Parasitic Schottky barrier causes open circuit voltage…”
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Simulation of Electrical Parameters for Ru/Ta2O5/SiO2/Si(p) High-k MOS Structure by Racko, Juraj, Harmatha, Ladislav, Breza, Juraj, Benko, Peter, Donoval, Daniel

“…The contribution presents the results of simulation of direct tunnelling of free charge carriers through a thin gateinsulator in MOS structures consisting of a…”
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Vertical current transport processes in MOS-HEMT heterostructures by Racko, Juraj, Lalinský, Tibor, Mikolášek, Miroslav, Benko, Peter, Thiele, Sebastian, Schwierz, Frank, Breza, Juraj

“…[Display omitted] •Introduction of integral electron trap-assisted and direct tunnelling transport velocities for thin oxide layers.•Calculation of the applied…”
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Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling by Racko, Juraj, Benko, Peter, Mikolášek, Miroslav, Granzner, Ralf, Kittler, Mario, Schwierz, Frank, Harmatha, Ladislav, Breza, Juraj

“…•A model of trap-assisted tunnelling in heterostructures was developed and combined with a model of direct tunnelling.•The effect of Al distribution in the…”
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Raman spectroscopy of porous silicon substrates by Kadlečíková, Magdaléna, Breza, Juraj, Vančo, Ľubomír, Mikolášek, Miroslav, Hubeňák, Michal, Racko, Juraj, Greguš, Ján

“…We have investigated the effect of the etching time on the Raman spectra of porous silicon prepared by anodic etching. Electrochemical destruction of the…”
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A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times by RACKO, Juraj, BENKO, Peter, HOTOVY, Ivan, HARMATHA, Ladislav, MIKOLASEK, Miroslav, GRANZNER, Ralf, KITTLER, Mario, SCHWIERZ, Frank, BREZA, Juraj

“…The work presents a physical model of trap-assisted tunneling that can quantitatively determine the effect of traps upon the total current through a…”
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Capacitance study of carrier inversion at the amorphous/crystalline silicon heterojunction passivated by different thicknesses of i-layer by MIKOLASEK, Miroslav, STUCHLIKOVA, Lubica, HARMATHA, Ladislav, VINCZE, Andrej, NEMEC, Michal, RACKO, Juraj, BREZA, Juraj

“…The paper deals with the diagnostics of structures containing a heterojunction of amorphous and crystalline silicon representing the key part of the silicon…”
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Dielectric Properties and Breakdown of the Gate Oxide in the MOS Structure by Ladislav Harmatha, Peter Valent, Juraj Racko

“…The article treats the methodology of measuring the breakdown voltage on Si-based MOS structures. Identification of defects in the thin gate oxide is performed…”
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Influence of the broken symmetry of defect state distribution at the a-Si:H/c-Si interface on the performance of hetero-junction solar cells by Mikolášek, Miroslav, Racko, Juraj, Harmatha, Ladislav, Gašpierik, Pavol, Šutta, Pavol

“…Taking into account the fact that the distribution of defect states at the interface does not have strictly symmetrical shape, we present a simulation study of…”
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Trap-Assisted Tunneling in the Schottky Barrier by J. Racko, J. Pechacek, M. Mikolasek, P. Benko, A. Grmanova, L. Harmatha, J. Breza

“…The paper presents a new way how to calculate the currents in a Schottky barrier. The novel phenomeno-logical model extends the Shockley-Read-Hall…”
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A New Model of Multiphonon Excitation Trap-Assisted Band-to-Band Tunneling by J. Racko, M. Mikolasek, A. Grmanova, J. Breza, P. Benko, O. Gallo, L. Harmatha

“…The paper describes a new approach to calculating the currents in a pn-diode based on the extension of the Shockley-Read-Hall recombination-generation model…”
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Extended thermionic emission-diffusion theory of charge transport through a Schottky diode by Racko, Juraj, Grmanová, Alena, Breza, Juraj

“…An extended thermionic emission-diffusion theory of charge carrier transport through a Schottky diode is derived considering the effect of the Richardson…”
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A novel device - Floating gate transistor for storing weight of neural networks by Krajmer, Mario, Racko, Juraj, Ďuračková, Daniela

“…This paper deals with operation of a floating gate transistor as a memory element. The aim was to simulate and analyze operation and properties of the memory…”
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A new model of trap assisted band-to-band tunnelling by Mikolášek, Miroslav, Racko, Juraj, Harmatha, Ladislav, Gallo, Ondrej, Režnák, Jan, Schwierz, Frank, Granzner, Ralf

“…The paper describes a new approach to calculate currents in a PN diode based on the extension of the Shockley-Read-Hall recombination-generation model…”
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Some simulated properties of the pseudostructure of a floating gate MOS transistor by Durackova, D., Krajmer, M., Racko, J., Breza, J., Kadlecikova, M.

“…The floating gate technology is widely used as a memory element in digital circuits and as a novel memory element in analogue technology. In this work we…”
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Current transport in MIM Structures by Racko, J., Harmatha, L., Schwierz, F., Granzner, R., Breza, J., Frohlich, K.

“…We present a new model of current transport in MIM structures due to quantum mechanical tunnelling. In addition to direct tunnelling through an insulating…”
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Critical analysis of the schottky boundary condition for numerical simulation of Schottky and MESFET structure by Donoval, Daniel, Snowden, Christoper M, Barus, Miroslav, Racko, Juraj, Bedlek, Miroslav

“…A critical analysis of the existing boundary conditions at the Schottky contact is described. It is supported by the results of simulation and comparison with…”
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