Search Results - "JungDal Choi"

What Lies Ahead for Resistance-Based Memory Technologies? by Song, Yoon-Jong, Jeong, Gitae, Baek, In-Gyu, Choi, Jungdal

“…Phase-change RAM, magnetic RAM, and resistive RAM offer strong scalability, speed, and power consumption advantages over conventional capacitance-based memory…”
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3D approaches for non-volatile memory by Jungdal Choi, Kwang Soo Seol

“…The NAND flash market is continuously growing by the successive introduction of innovative devices and applications. To meet the market trend, 3-dimenstional…”
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A Novel nand Flash Memory With Asymmetric S/D Structure Using Fringe-Field-Induced Inversion Layer by PARK, Ki-Tae, SEL, Jong-Sun, CHOI, Jungdal, SONG, Yunheub, KIM, Changhyun, KIM, Kinam

“…A NAND flash memory device for sub-40-nm-node technology and beyond utilizing an asymmetric source/drain (S/D) structure to suppress short-channel effects and…”
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Stacked Gated Twin-Bit (SGTB) SONOS Memory Device for High-Density Flash Memory by SHIM, Won Bo, CHO, Seongjae, PARK, Byung-Gook, LEE, Jung Hoon, LI, Dong Hua, KIM, Doo-Hyun, LEE, Gil Sung, KIM, Yoon, PARK, Se Hwan, KIM, Wandong, CHOI, Jungdal

“…A novel stacked gated twin-bit SONOS memory for high-density nonvolatile flash memory is introduced. We introduced gated twin-bit (GTB) memory previously that…”
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Effects of Lateral Charge Spreading on the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory by Changseok Kang, Jungdal Choi, Jaesung Sim, Changhyun Lee, Yoocheol Shin, Jintaek Park, Jongsun Sel, Sanghun Jeon, Youngwoo Park, Kinam Kim

“…It was found that the charge loss behavior of TANOS (TaN-Al 2 O 3 -nitride-oxide-silicon) cells for NAND flash memory application is highly dependent on the…”
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Highly scalable NAND flash memory with robust immunity to program disturbance using symmetric inversion-type source and drain structure by Chang-Hyun Lee, Jungdal Choi, Youngwoo Park, Changseok Kang, Byeong-In Choi, Hyunjae Kim, Hyunsil Oh, Won-Seong Lee

“…The symmetric inversion-type S/D structure has been employed for achieving available program disturbance for scaled NAND flash memory beyond sub-40 nm node…”
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Highly reliable vertical NAND technology with biconcave shaped storage layer and leakage controllable offset structure by Won-seok Cho, Sun Il Shim, Jaehoon Jang, Hoo-sung Cho, Byoung-Koan You, Byoung-Keun Son, Ki-hyun Kim, Jae-Joo Shim, Choul-min Park, Jin-soo Lim, Kyoung-Hoon Kim, De-will Chung, Ju-Young Lim, Hui-Chang Moon, Sung-min Hwang, Hyun-seok Lim, Han-Soo Kim, Jungdal Choi, Chilhee Chung

“…The performance and reliability of 3-D NAND cells fabricated by TCAT (Terabit Cell Array Transistor) technology have been improved significantly via a…”
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A new floating gate cell structure with a silicon-nitride cap layer for sub-20 nm NAND flash memory by Kwang Soo Seol, Heesoo Kang, Jaeduk Lee, Hyunsuk Kim, Byungkyu Cho, Dohyun Lee, Yong-Lack Choi, Nok-Hyun Ju, Changmin Choi, SungHoi Hur, Jungdal Choi, Chilhee Chung

“…A new cell structure of NAND memory devices, which employs an additional nitride layer between the top of a floating gate (FG) and inter-poly dielectrics…”
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New phenomena for the Lifetime Prediction of TANOS-based Charge Trap NAND Flash Memory by Juhyung Kim, Changseok Kang, Sung-Il Chang, Jongyeon Kim, Younseok Jeong, Chan Park, Joo-Heon Kang, Sang-Hoon Kim, Sunkyu Hwang, Byeong-In Choe, Jintaek Park, Juhyuck Chung, Youngwoo Park, Jungdal Choi, Chilhee Chung

“…In this paper, the data retention characteristics of the charge trap flash (CTF) memory are evaluated and new findings to predict its lifetime more accurately…”
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A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM) by Seong-Geon Park, Min Kyu Yang, Hyunsu Ju, Dong-Jun Seong, Jung Moo Lee, Eunmi Kim, Seungjae Jung, Lijie Zhang, Yoo Cheol Shin, In-Gyu Baek, Jungdal Choi, Ho-Kyu Kang, Chilhee Chung

“…A non-linear RRAM cell with sub-1μA ultralow operating current has been successfully fabricated for high density vertical ReRAM (VRRAM) applications. A uniform…”
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Comparison of double patterning technologies in NAND flash memory with sub-30nm node by Byungjoon Hwang, Jeehoon Han, Myeong-Cheol Kim, Sunggon Jung, Namsu Lim, Sowi Jin, Yongsik Yim, Donghwa Kwak, Jaekwan Park, Jungdal Choi, Kinam Kim

“…Fine patterning technologies - e-beam lithography, SPT (spacer patterning technology) and SaDPT (self aligned double patterning technology)-have been…”
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Future Outlook of NAND Flash Technology for 40nm Node and Beyond by Kinam Kim, Jungdal Choi

“…The NAND flash memory occupied 40% of the total flash memory market with an annual growth rate of 70% in 2004, while NOR flash achieved only more modest growth…”
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A practical Si nanowire technology with nanowire-on-insulator structure for beyond 10nm logic technologies by Hur, Sung-Gi, Yang, Jung-Gil, Kim, Sang-Su, Lee, Dong-Kyu, An, Taehyun, Nam, Kab-Jin, Kim, Seong-Je, Wu, Zhenhua, Lee, Wonsok, Kwon, Uihui, Lee, Keun-Ho, Park, Youngkwan, Yang, Wouns, Choi, Jungdal, Kang, Ho-Kyu, Jung, EunSung

“…This paper reports the design and fabrication of a practical Si nanowire (NW) transistor for beyond 10 nm logic devices application. The dependency of the DC…”
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What Lies Ahead for Resistance-Based Memory Technologies? : Next-Generation Memory by SONG, Yoon-Jong, GITAE JEONG, BAEK, In-Gyu, JUNGDAL CHOI

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Endurance Prediction of Scaled NAND Flash Memory Based on Spatial Mapping of Erase Tunneling Current by Fayrushin, A, ChangHyun Lee, Youngwoo Park, Jungdal Choi, Jeonghyuk Choi, Chilhee Chung

“…In this work, we present novel endurance prediction technique for scaled NAND Flash memory with arbitrary size and shape. Predicted endurance curve is obtained…”
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28.2 A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers \mathsf by Kim, Bvunarvul, Lee, Seungpil, Hah, Beomseok, Park, Kanawoo, Park, Yongsoon, Jo, Kangwook, Noh, Yujong, Seol, Hyeoncheon, Lee, Hyunsoo, Shin, Jaehyeon, Choi, Seongjin, Jung, Youngdon, Ahn, Sungho, Park, Yonghun, Oh, Sujeong, Kim, Myungsu, Kim, Seonauk, Park, Hyunwook, Lee, Taeho, Won, Haeun, Kim, Minsung, Koo, Cheulhee, Choi, Yeonjoo, Choi, Suyoung, Park, Sechun, Youn, Dongkyu, Lim, Junyoun, Park, Wonsun, Hur, Hwang, Kwean, Kichang, Choi, Hongsok, Jeong, Woopyo, Chung, Sungyong, Choi, Jungdal, Cha, Seonyong

“…As data produced by multimedia explodes and demand for data storage increases, the most important topics for the NAND-Flash memory field are continuous…”
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Physical Modeling and Analysis on Improved Endurance Behavior of P-Type Floating Gate NAND Flash Memory by ChangHyun Lee, Fayrushin, A., Sunghoi Hur, Youngwoo Park, Jungdal Choi, Jeonghyuk Choi, Chilhee Chung

“…In this work, we report improved endurance of p-type floating-gate NAND flash cell. The physical model on the endurance and data retention of p-type…”
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A New Cell-to-Cell Interference Induced by Conduction Band Distortion near S/D Region in Scaled NAND Flash Memories by Byungkyu Cho, ChangHyun Lee, Kwangsoo Seol, Sunghoi Hur, Jungdal Choi, Jeonghyuk Choi, Chilhee Chung

“…A new cell-to-cell interference phenomenon has been found beyond sub 40nm node. Unlike capacitive coupling between floating gates, the threshold voltage (V TH…”
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A New Cell-Type String Select Transistor in NAND Flash Memories for under 20nm Node by Do-Hyune Lee, Yoocheol Shin, Donghoon Jang, Changhyun Lee, Joon-Hee Lee, Jungdal Choi, Seong-Soon Cho, Jeong-Hyuk Choi

“…A new string structure, having a cell-type string select transistor line (CT-SSL) is proposed for NAND flash memories beyond 20nm node device. The boosted…”
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A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density by Cho, Wanik, Jung, Jongseok, Kim, Jongwoo, Ham, Junghoon, Lee, Sangkyu, Noh, Yujong, Kim, Dauni, Lee, Wanseob, Cho, Kayoung, Kim, Kwanho, Lee, Heejoo, Chai, Sooyeol, Jo, Eunwoo, Cho, Hanna, Kim, Jong-Seok, Kwon, Chankeun, Park, Cheolioona, Nam, Hveonsu, Won, Haeun, Kim, Taeho, Park, Kyeonghwan, Oh, Sanghoon, Ban, Jinhyun, Park, Junyoung, Shin, Jaehyeon, Shin, Taisik, Jang, Junseo, Mun, Jiseong, Choi, Jehyun, Choi, Hyunseung, Choi, Suna-Wook, Park, Wonsun, Yoon, Dongkvu, Kim, Minsu, Lim, Junvoun, An, Chiwook, Shirr, Hyunyoung, Oh, Haesoon, Park, Haechan, Shim, Sungbo, Huh, Hwang, Choi, Honasok, Lee, Seungpil, Sim, Jaesuna, Gwon, Kichana, Kim, Jumsoo, Jeong, Woopyo, Choi, Jungdal, Jin, Kyo-Won

“…Triple-level-cell (TLC) NAND has prevailed the non-volatile memory market, yet the quad-level-cell (QLC) NAND is emerging as a suitable replacement for…”
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