Search Results - "Jung, Wojciech"

Enhancement of Ru-Si-O/In-Ga-Zn-O MESFET Performance by Reducing Depletion Region Trap Density by Kaczmarski, Jakub, Grochowski, Jakub, Kaminska, Eliana, Taube, Andrzej, Borysiewicz, Michal A., Pagowska, Karolina, Jung, Wojciech, Piotrowska, Anna

“…In this letter, we investigated the effect of magnetron cathode current (I c ) during reactive sputtering of In-Ga-Zn-O (a-IGZO) channel layer on properties of…”
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Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts by Taube, Andrzej, Kaczmarski, Jakub, Kruszka, Renata, Grochowski, Jakub, Kosiel, Kamil, Gołaszewska-Malec, Krystyna, Sochacki, Mariusz, Jung, Wojciech, Kamińska, Eliana, Piotrowska, Anna

“…[Display omitted] •We fabricated HV AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain electrodes.•We examine impact of temperature on the electrical…”
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Transparent Amorphous Ru-Si-O Schottky Contacts to In-Ga-Zn-O by Kaczmarski, Jakub, Grochowski, Jakub, Kaminska, Eliana, Taube, Andrzej, Dyczewski, Jan, Jung, Wojciech, Dynowska, Elzbieta, Piotrowska, Anna

“…Transparent amorphous oxide semiconductors (TAOSs), such as In-Ga-Zn-O (a-IGZO), are the subject of intensive experimental and theoretical research aimed at…”
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In-Ga-Zn-O MESFET with transparent amorphous Ru-Si-O Schottky barrier by Kaczmarski, Jakub, Grochowski, Jakub, Kaminska, Eliana, Taube, Andrzej, Jung, Wojciech, Piotrowska, Anna

“…Rectifying transparent amorphous Ru–Si–O Schottky contacts to In–Ga–Zn–O have been fabricated by means of reactive sputtering without any annealing processes…”
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Influence of pressure annealing on electrical properties of Mn implanted silicon by Jung, Wojciech, Misiuk, Andrzej

“…The effect of annealing at 610–720 K under enhanced hydrostatic pressure (HP) on electrical properties of manganese implanted Czochralski grown silicon…”
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Study of defects in the near-surface layer created in silicon by H 2 + or He + implantation by Jung, Wojciech, Antonova, Irina V., Misiuk, Andrzej

“…Thermal donors formation in silicon implanted with H 2 + or He + ions or co-implanted with both kinds of ions and annealed at 720 K under atmospheric and…”
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Study of defects in the near-surface layer created in silicon by H2+ or He+ implantation by Jung, Wojciech, Antonova, Irina V., Misiuk, Andrzej

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Dislocation-related photoluminescence from processed Si by Misiuk, Andrzej, Zhuravlev, Konstantin S., Jung, Wojciech, Prujszczyk, Marek, Steinman, Edward A.

“…Dislocation-related photoluminescence (PL) from oxygen containing Czochralski silicon (Cz-Si) processed at up to 1,400 K (HT) under atmospheric and enhanced Ar…”
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Growth of PbSe thin films on Si substrates by pulsed laser deposition method by Rumianowski, Roman T., Dygdala, Roman S., Jung, Wojciech, Bala, Waclaw

“…Fabrication of p-type PbSe thin films on (1 1 1) and (1 0 0)-oriented silicon substrates by the pulsed laser deposition method is demonstrated. The PbSe films…”
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High-quality p–n junction fabrication by ion implantation using the LPCVD amorphous silicon films by Jaroszewicz, Bohdan, Budzyński, Tadeusz, Panas, Andrzej, Kociubinski, Andrzej, Słysz, Wojciech, Jung, Wojciech, Jakieła, Rafał, Barcz, Adam, Marczewski, Jacek, Grabiec, Piotr

“…A novel technique of manufacturing high electric performance p–n junctions has been investigated in this paper. In the first step, amorphous silicon films…”
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Electron eigen states in quantum dots revealed by temperature derivative capacitance spectroscopy by Jung, W., Zaremba, G., Engstrom, O., Kaniewska, M.

“…A novel method is presented for detecting confined energy states of quantum dots embedded in junction space charge regions. By determining the temperature…”
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