Search Results - "Jung, Ukjin"

Demonstration of Complementary Ternary Graphene Field-Effect Transistors by Kim, Yun Ji, Kim, So-Young, Noh, Jinwoo, Shim, Chang Hoo, Jung, Ukjin, Lee, Sang Kyung, Chang, Kyoung Eun, Cho, Chunhum, Lee, Byoung Hun

“…Strong demand for power reduction in state-of-the-art semiconductor devices calls for novel devices and architectures. Since ternary logic architecture can…”
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Extraction of the Interface State Density of Top-Gate Graphene Field-Effect Transistors by Ukjin Jung, Yun Ji Kim, Yonghun Kim, Young Gon Lee, Byoung Hun Lee

“…Novel electrical measurement method, discharge current analysis (DCA), is introduced to extract the density and energy distribution of charge traps at the…”
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Hot-Carrier Instability of nMOSFETs Under Pseudorandom Bit Sequence Stress by Kim, Yonghun, Kang, Soo Cheol, Lee, Sang Kyung, Jung, Ukjin, Kim, Seung Mo, Lee, Byoung Hun

“…Hot-carrier instability under stress conditions emulating a random logic operation (random ON and OFF) has been investigated using pseudorandom bit sequence…”
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Highly sensitive wide bandwidth photodetectors using chemical vapor deposited graphene by Goo Kang, Chang, Kyung Lee, Sang, Jin Yoo, Tae, Park, Woojin, Jung, Ukjin, Ahn, Jinho, Hun Lee, Byoung

“…A photodetector generating a nearly constant photocurrent in a very wide spectral range from ultraviolet (UV) to infrared has been demonstrated using chemical…”
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Quantitative analysis of interfacial reactions at a graphene/SiO2 interface using the discharge current analysis method by Jung, Ukjin, Gon Lee, Young, Goo Kang, Chang, Lee, Sangchul, Hun Lee, Byoung

“…Using the discharge current analysis method, the contribution of charge generation through an interfacial reaction at a graphene /substrate interface is…”
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Intrinsic Time Zero Dielectric Breakdown Characteristics of HfAlO Alloys by Jin Ju Kim, Minwoo Kim, Ukjin Jung, Kyung Eun Chang, Sangkyung Lee, Yonghun Kim, Young Gon Lee, Rino Choi, Byoung Hun Lee

“…A thermochemical model describing the relationship between the dielectric breakdown field (EBD) and dielectric constant (k) of high- k dielectric has been…”
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Complementary Unipolar WS2 Field-Effect Transistors Using Fermi-Level Depinning Layers by Park, Woojin, Kim, Yonghun, Jung, Ukjin, Yang, Jin Ho, Cho, Chunhum, Kim, Yun Ji, Hasan, Syed Mohammad Najib, Kim, Hyun Gu, Lee, Han Bo Ram, Lee, Byoung Hun

“…High contact resistance and symmetrical conduction are serious challenges in practical applications of transition metal dichalcogenide (TMD) field‐effect…”
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Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry by Yonghun Kim, Young Gon Lee, Ukjin Jung, Jin Ju Kim, Minhyeok Choe, Kyong Taek Lee, Sangwoo Pae, Jongwoo Park, Byoung Hun Lee

“…The effective mobility (μ eff ) of MOSFETs with ultrathin high-k gate dielectric (EOT = 0.85 nm) has been successfully extracted using a time domain…”
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Process-Dependent N/PBTI Characteristics of TiN Gate FinFETs by Jin Ju Kim, Moonju Cho, Pantisano, L., Ukjin Jung, Young Gon Lee, Chiarella, T., Togo, M., Horiguchi, N., Groeseneken, G., Byoung Hun Lee

“…A study of the negative and positive bias temperature instability (N/PBTI) reliability of FinFETs with different TiN metal gates deposited by either atomic…”
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New insights into 10nm FinFET BTI and its variation considering the local layout effects by Changze Liu, Minjung Jin, Uemura, Taiki, Jinju Kim, Jungin Kim, Ukjin Jung, Hyun Chul Sagong, Gunrae Kim, Junekyun Park, Sangchul Shin, Sangwoo Pae

“…In this paper, BTI variation of 10nm FinFET is experimentally studied taking into account of the local layout effects. Although Fin shape is further optimized…”
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Leakage current limit of time domain reflectometry in ultrathin dielectric characterization by Kim, Yonghun, Baek, Seung-heon Chris, Jeon, Changhoon, Lee, Young Gon, Kim, Jin Ju, Jung, Ukjin, Kang, Soo Cheol, Park, Woojin, Lee, Seok Hee, Lee, Byoung Hun

“…The accurate characterization of highly leaky dielectrics has been a serious challenge in MOSFET and capacitor studies. We have shown that time domain…”
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Capacitance Analysis of Highly Leaky \hbox \hbox MIM Capacitors Using Time Domain Reflectometry by Yonghun Kim, Young Gon Lee, Minwoo Kim, Chang Goo Kang, Ukjin Jung, Jin Ju Kim, Seung Chul Song, Blatchford, J., Kirkpatrick, B., Niimi, H., Kwan Yong Lim, Byoung Hun Lee

“…Characterization of metal-insulator-metal (MIM) capacitors with a scaled dielectric is a challenge using conventional capacitance-voltage ( C - V )…”
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Graphene transfer in vacuum yielding a high quality graphene by Lee, Sangchul, Lee, Sang Kyung, Kang, Chang Goo, Cho, Chunhum, Lee, Young Gon, Jung, Ukjin, Lee, Byoung Hun

“…The importance of proper graphene transfer process cannot be emphasized more because it is so closely related to the performance and stability of graphene…”
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Interface state degradation during AC positive bias temperature instability stress by Kang, Soo Cheol, Kim, Seung Mo, Jung, Ukjin, Kim, Yonghun, Park, Woojin, Lee, Byoung Hun

“…•The impact of a bipolar AC stress on bulk FinFET.•Weak relaxation of the interfacial traps compared to that of bulk traps.•Weak recovery is attributed to the…”
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Chemically induced Fermi level pinning effects of high-k dielectrics on graphene by Kim, So-Young, Kim, Yun Ji, Jung, Ukjin, Lee, Byoung Hun

“…High-k materials such as Al 2 O 3 and HfO 2 are widely used as gate dielectrics in graphene devices. However, the effective work function values of metal gate…”
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Middle-of-the-Line Reliability Characterization of Recessed-Diffusion-Contact Adopted sub-5nm Logic Technology by Kim, Seongkyung, Jung, Ukjin, Choo, Seungjin, Choi, Kihyun, Chung, Taejin, Chung, Shinyoung, Lee, Euncheol, Park, Juhun, Bae, Deokhan, Um, Myungyoon

“…In this paper, we report middle-of-the-line (MOL) reliability characterization of recessed-diffusion-contacts adopted sub-5nm logic technology. The intrinsic…”
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Contact resistance reduction using Fermi level de-pinning layer for MoS2 FETs by Woojin Park, Yonghun Kim, Sang Kyung Lee, Ukjin Jung, Jin Ho Yang, Chunhum Cho, Yun Ji Kim, Sung Kwan Lim, In Seol Hwang, Han-Bo-Ram Lee, Byoung Hun Lee

“…Achieving a low contact resistance for 2D materials is a critical challenge for device applications. In this work, the contact resistance of MoS 2 FETs has…”
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Quantitatively estimating defects in graphene devices using discharge current analysis method by Jung, Ukjin, Lee, Young Gon, Kang, Chang Goo, Lee, Sangchul, Kim, Jin Ju, Hwang, Hyeon June, Lim, Sung Kwan, Ham, Moon-Ho, Lee, Byoung Hun

“…Defects of graphene are the most important concern for the successful applications of graphene since they affect device performance significantly. However,…”
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A systematic study of gate dielectric TDDB in FinFET technology by Kim, Hyunjin, Jin, Minjung, Sagong, Hyunchul, Kim, Jinju, Jung, Ukjin, Choi, Minhyuck, Park, Junekyun, Shin, Sangchul, Pae, Sangwoo

“…A systematic study of HK/MG TDDB on FinFETs are discussed on this paper. In addition to conventional inversion based TDDB modeling, accumulation mode and AC…”
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Influence of extrinsic factors on accuracy of mobility extraction in graphene metal-oxide-semiconductor field effect transistors by Gon Lee, Young, Ji Kim, Yun, Goo Kang, Chang, Cho, Chunhum, Lee, Sangchul, Jun Hwang, Hyeon, Jung, Ukjin, Hun Lee, Byoung

“…Graphene has attracted attention because of its extraordinarily high mobility. However, procedures to extract mobility from graphene metal-oxide semiconductor…”
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