Search Results - "Junekyun Park"

Improvement of Quantum Dot Light Emitting Device Characteristics by CdSe/ZnS Blended with HMDS (Hexamethyldisilazane) by Park, Junekyun, Shin, Eunkyu, Park, Jongwoo, Roh, Yonghan

“…We demonstrated the way to improve the characteristics of quantum dot light emitting diodes (QD-LEDs) by adding a simple step to the conventional fabrication…”
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Technology scaling on High-K & Metal-Gate FinFET BTI reliability by Kyong Taek Lee, Wonchang Kang, Eun-Ae Chung, Gunrae Kim, Hyewon Shim, Hyunwoo Lee, Hyejin Kim, Minhyeok Choe, Nae-In Lee, Patel, Anuj, Junekyun Park, Jongwoo Park

“…High-K (HK) & Metal-Gate (MG) transistor technology have become a mainstream for the logic & SOC processes. On HK/MG process, bias-temp instability (BTI) poses…”
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New insights into 10nm FinFET BTI and its variation considering the local layout effects by Changze Liu, Minjung Jin, Uemura, Taiki, Jinju Kim, Jungin Kim, Ukjin Jung, Hyun Chul Sagong, Gunrae Kim, Junekyun Park, Sangchul Shin, Sangwoo Pae

“…In this paper, BTI variation of 10nm FinFET is experimentally studied taking into account of the local layout effects. Although Fin shape is further optimized…”
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Frequency dependent TDDB behaviors and its reliability qualification in 32nm high-k/metal gate CMOSFETs by Kyong Taek Lee, Jongik Nam, Minjung Jin, Kidan Bae, Junekyun Park, Lira Hwang, Jungin Kim, Hyunjin Kim, Jongwoo Park

“…The TDDB failure mechanism of high-k dielectric/metal gate (HK/MG) CMOSFETs on DC and AC stress conditions are investigated in comparison to poly-Si/SiON. All…”
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Gate stack process optimization for TDDB improvement in 28nm high-k/metal gate nMOSFETs by Kyong Taek Lee, Hyunjin Kim, Junekyun Park, Jongwoo Park

“…The effects of IL (interfacial layer) thickness and nitrogen concentration of high-k layer on TDDB are comprehensively investigated for HK/MG nMOSFETs…”
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Improving hole injection ability using a newly proposed WO3/NiOx bilayer in solution processed quantum dot light-emitting diodes by Lee, Sanghyun, Kim, Jaehyun, Park, Junekyun, Shin, Eunkyu, Roh, Yonghan

“…We propose a novel device structure with a WO3/NiOx bilayer to improve the hole injection ability in QLEDs fabricated mainly by a solution-based process…”
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Behaviors and physical degradation of HfSiON MOSFET linked to strained CESL performance booster by Kidan Bae, Minjung Jin, Hajin Lim, Lira Hwang, Dongseok Shin, Junekyun Park, Jinchul Heo, Jongho Lee, Jinho Do, Ilchan Bae, Chulhee Jeon, Jongwoo Park

“…The propensity of HCI and BTI degradation of HfSiON MOSFET on strained SiN-CESL performance booster is meticulously investigated. It is found that HCI and BTI…”
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Reliability characterization of 10nm FinFET technology with multi-VT gate stack for low power and high performance by Minjung Jin, Changze Liu, Jinju Kim, Jungin Kim, Hyewon Shim, Kangjung Kim, Gunrae Kim, Soonyoung Lee, Uemura, Taiki, Man Chang, Taehyun An, Junekyun Park, Sangwoo Pae

“…We report the reliability characterization of 10nm FinFET process technology. Unique reliability behavior by using multi-V T 's through work function…”
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Enhanced Reliability of 7-nm Process Technology Featuring EUV by Choi, Kihyun, Shim, Hyewon, Park, Junekyun, Cho, Youngwoo, Rhee, Hwasung, Pae, Sangwoo, Sagong, Hyun Chul, Kang, Wonchang, Kim, Hyunjin, Hai, Jiang, Lee, Miji, Kim, Bomi, Lee, Mi-Ji, Lee, Soonyoung

“…In this article, we report the reliability characterization of 7-nm technology, in which the highly scaled sixth generation of FinFETs and 256-Mb static random…”
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Time Dependent Variability in Advanced FinFET Technology for End-of-Lifetime Reliability Prediction by Jiang, Hai, Kim, Jinju, Choi, Kihyun, Shim, Hyewon, Sagong, Hyunchul, Park, Junekyun, Rhee, Hwasung, Lee, Euncheol

“…Time dependent variability has become a significant concern for End-of-lifetime(EOL) reliability prediction for advanced technology with continuous scaling. In…”
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Localized Layout Effect Related Reliability Approach in 8nm FinFETs Technology: From Transistor to Circuit by Jiang, Hai, Sagong, Hyunchul, Kim, Jinju, Park, Junekyun, Shin, Sangchul, Pae, Sangwoo

“…Localized layout effect (LLE) has become a significant concern for device area, performance and reliability co-optimization due to more compact layout…”
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A systematic study of gate dielectric TDDB in FinFET technology by Kim, Hyunjin, Jin, Minjung, Sagong, Hyunchul, Kim, Jinju, Jung, Ukjin, Choi, Minhyuck, Park, Junekyun, Shin, Sangchul, Pae, Sangwoo

“…A systematic study of HK/MG TDDB on FinFETs are discussed on this paper. In addition to conventional inversion based TDDB modeling, accumulation mode and AC…”
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Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology by Jiang, Hai, Sagong, Hyunchul, Kim, Jinju, Shim, Hyewon, Kim, Yoohwan, Park, Junekyun, Uemura, Taiki, Ji, Yongsung, Jeong, Taeyoung, Kwon, Dongkyun, Rhee, Hwasung, Pae, Sangwoo, Lee, Brandon

“…Self-heating effect (SHE, ΔT sh ) has become a significant concern for device performance, variability and reliability co-optimization due to more confined…”
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Effects of Far-BEOL anneal on the WLR and product reliability characterization of FinFET process technology by Sagong, Hyun Chul, Kim, Hyunjin, Choo, Seungjin, Yoon, Sungyoung, Shim, Hyewon, Ha, Sangsu, Jeong, Tae-Young, Choe, Minhyeok, Park, Junekyun, Shin, Sangchul, Pae, Sangwoo

“…Far-BEOL forming gas anneal has been used to passivate the dangling bonds and to improve the integrity of the gate dielectric [1-2]. The extensive reliability…”
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Enhanced Reliability of 7nm Process Technology featuring EUV by Choi, Kihyun, Sagong, Hyun Chul, Kang, Wonchang, Kim, Hyunjin, Hai, Jiang, Lee, Miji, Kim, Bomi, Lee, Mi-ji, Lee, Soonyoung, Shim, Hyewon, Park, Junekyun, Cho, Youngwoo, Rhee, Hwasung, Pae, Sangwoo

“…In this paper, we report the reliability characterization of 7nm FinFET technology, in which the highly scaled 6 th generation of FinFETs and 256Mbit SRAM…”
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Reliability characterization of advanced CMOS image sensor (CIS) with 3D stack and in-pixel DTI by Ji, Younggeun, Kim, Jeonghoon, Kim, Jungin, Lee, Miji, Noh, Jaeheon, Jeong, Taeyoung, Shin, Juhyeon, Kim, Junho, Heo, Young, Cho, Ung, Sagong, Hyunchul, Park, Junekyun, Choo, Yeonsik, Do, Gilhwan, Kang, Hoyoung, Choi, Eunkyeong, Sun, Dongyoon, Kang, Changki, Shin, Sangchul, Pae, Sangwoo

“…Due to the advancement of CMOS image sensors (CIS), camera module on the mobile platform has paved way for very high quality photos and video shooting…”
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Reliability of Advanced FinFET Technology Nodes Beyond Planar: Invited by Sagong, Hyun Chul, Choi, Kihyun, Jiang, Hai, Park, Junekyun, Rhee, Hwasung, Pae, Sangwoo

“…In this paper, we report the extensive reliability characterization and modeling of multiple FinFET technology generations. Comprehensive study on intrinsic…”
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Reliability on Evolutionary FinFET CMOS Technology and Beyond by Choi, Kihyun, Sagong, Hyun Chul, Jin, Minjung, Hai, Jiang, Lee, Miji, Jeong, Taeyoung, Yeo, Myung Soo, Shim, Hyewon, Ahn, Da, Kim, Wooyeon, Kim, Yongjeung, Park, JuneKyun, Rhee, Hwasung, Lee, Euncheol

“…During the past decades, FinFET has been the main device architecture to accelerate transistor performance. Since FinFET should be scaled down with…”
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Three-dimensional (3D) Characterization of Electromigration Failure Mechanism of Solder Joints in WLP using X-ray Microscopy by Chang, Jaewon, Choi, Hyunjun, Kim, Jinseok, Park, Sangkwon, Jo, Yoonkyeong, Jeong, Tae-Young, Soo Yeo, Myung, Kang, Hanbyul, Park, Junekyun, Shin, Sangchul, Pae, Sangwoo

“…In this study, we investigated electromigration characteristics of wafer-level-packaging solder joint upon temperature cycling stress and failure mechanism…”
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